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    2N3012 Search Results

    2N3012 Datasheets (36)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3012
    Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=12 / Ic=0.2 / Hfe=30-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF 32.31KB 1
    2N3012
    Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=12 / Ic=0.2 / Hfe=30-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF 10.03KB 1
    2N3012
    Central Semiconductor PNP METAL CAN Transistors Scan PDF 337.93KB 3
    2N3012
    Crimson Semiconductor Transistor Selection Guide Scan PDF 1.48MB 36
    2N3012
    General Diode Transistor Selection Guide Scan PDF 608.68KB 10
    2N3012
    Motorola The European Selection Data Book 1976 Scan PDF 51.59KB 2
    2N3012
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 86.04KB 1
    2N3012
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.24KB 1
    2N3012
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 88.26KB 1
    2N3012
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 54.06KB 1
    2N3012
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 51.05KB 1
    2N3012
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 161.83KB 1
    2N3012
    Unknown GE Transistor Specifications Scan PDF 39.09KB 1
    2N3012
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 62.62KB 1
    2N3012
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.82KB 1
    2N3012
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 119.86KB 1
    2N3012
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 41.48KB 1
    2N3012
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 96.52KB 1
    2N3012
    Unknown Vintage Transistor Datasheets Scan PDF 53.04KB 1
    2N3012
    Unknown Vintage Transistor Datasheets Scan PDF 52.86KB 1
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    2N3012 Price and Stock

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    Susumu Co Ltd RG2012N-3012-D-T5

    Thin Film Resistors - SMD 1/8W 30.1K Ohms 0.5% 0805 10ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RG2012N-3012-D-T5
    • 1 $0.39
    • 10 $0.28
    • 100 $0.20
    • 1000 $0.14
    • 10000 $0.12
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    Susumu Co Ltd RG2012N-3012-B-T1

    Thin Film Resistors - SMD Thin Film Chip Resistors 0805 size, 1/8W, 30.1 Kohm, 0.1%, 10ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RG2012N-3012-B-T1
    • 1 $0.65
    • 10 $0.46
    • 100 $0.32
    • 1000 $0.26
    • 10000 $0.22
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    Susumu Co Ltd RG2012N-3012-B-T5

    Thin Film Resistors - SMD 1/8W 30.1K Ohms 0.1% 0805 10ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RG2012N-3012-B-T5
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    • 10000 $0.23
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    Susumu Co Ltd RG2012N-3012-W-T5

    Thin Film Resistors - SMD 1/8W 30.1K Ohm 0.05% 0805 10ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RG2012N-3012-W-T5
    • 1 -
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    • 10000 $0.37
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    Motorola Semiconductor Products 2N3012

    Trans GP BJT PNP 12V 0.2A 360mW 3-Pin TO-18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N3012 32
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    Quest Components () 2N3012 32
    • 1 $6.85
    • 10 $5.02
    • 100 $4.57
    • 1000 $4.57
    • 10000 $4.57
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    2N3012 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3012

    Abstract: 2N2894 2N3012M
    Contextual Info: TYPES ¿«1884 2N3012 P-N-P SILICON TRANSISTORS B U L L E T IN NO. O L S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • Guaranteed VCE|>ot| 0 .5 v Max at 100ma • High f , - 400 Me Min "m echanical d ata T H E COLLECTOR IS IN E L E C T R IC A L


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    2n3012100ma2n28942n3012m PDF

    2N3012CSM

    Abstract: 400M
    Contextual Info: 2N3012CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original
    2n3012csm5/30m2-aug-02400m PDF

    2N3012

    Contextual Info: MOTOROLA SC XSTRS/R F igE D | b3b7ESM OOflba^O T | 2N3012 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage V cEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Ve b O 4.0 Vdc Collector Current — Continuous


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    2n3012o-206aa2n869a PDF

    Contextual Info: 2N3012 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original
    2n3012o206aa5/30m19-jun-02 PDF

    2N3012

    Contextual Info: 2N3012 Si NPN Power BJT 16.25 Transistors Transistors Bipolar Si NP. 1 of 1 Home Part Number: 2N3012 Online Store 2N3012 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original
    2n3012com/2n3012 PDF

    2N3012

    Abstract: 400M
    Contextual Info: 2N3012 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original
    2n3012o206aa5/30m2-aug-02+1400m PDF

    2N3012

    Contextual Info: 2N3012 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original
    2n3012o206aa5/30m16-jul-02 PDF

    Contextual Info: 2N3012CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original
    2n3012csm5/30m17-jul-02 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    NS3762

    Abstract: PN4258
    Contextual Info: {DISCRETE} £> 3 2 CM CO CM CM in to ICO 100 100 90 co o CO 20 20 10 o o o § 300 250 0 ID CO CO CO 25 o 30 o o CO > o o • »J o c 1- 40Ö , o o s t i l l 0 ■> U3 c ▼* <0 (£> - 5 O S- O C PJ ! S CO 3 0 c T- O * if > in CM 0 I o r - Ci o c 00 r- id


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    ns3762pn4258 PDF

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Contextual Info: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000


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    bft39bft29bft40bft30+8bft41bft31bfy50bft53bfy51bft542n42602n3829 PDF

    3012

    Abstract: 2N2894 2N3012 2N3209
    Contextual Info: 2N 2894 2N 3012 2N 3209 SILICON PLANAR PNP HIGH-SPEED SATU RATED SWITCHES The 2N 2894, 2N 3012 and 2N 3209 are silicon planar epitaxial PNP transistors in Jedec TO -18 metal case, intended for high speed, low saturation switching applications up to 100 mA.


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    2n320930122n28942n3012 PDF

    silect

    Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
    Contextual Info: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level


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    2n9292n9302n2483n2484+102s5012s5022s5032n37072n3012tis50silectn4060bc182l2n3709 PDF

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original
    2n7032n706c2n7082n709a+102n7172n718a2n719a2n720a2n7212n722aswitch npnbsy182n23692n4390 PDF

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    2n16132n16i3a2n1613b2n17i1+152n17iia2n3725a2n39472n40b02n41372n42072n32982n23602n26942n32082n3212n321din2192n2195b2n2888 PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211 PDF

    Contextual Info: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8


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    2n30082n30122n30142n3019+62n302080min30min5/30m4/30m2n3036 PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    20nttc10n12tfk 404t1s58+8bci83lgermanium diode oa 182tfk diodetransistors 2n 945v744akai amplifiertis62bci09 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268 PDF

    2N2800

    Abstract: 2N2801 2N2837 2N2838 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A
    Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1 V Ö VV OJ U CINI RAL D E I nû'î'JtiB ODDOSSG 3 T ¿ .ir n n ^ v n StrtlCUNÜUtTÜR an r * * / « •* VCE V eb hFE at •c V V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35 40 5 5 5 5 5


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    2n28002n28012n28372n2838+9-2n29042n2904a2n29052n2905acbr300000s232n29042n29062n2906a PDF

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


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    00dds7t-a7-012n49712/3s+1530/s92n3725a2n39472n40802n41372n42072n93082n221ba2n69s2n33042m21932ni8932n236s2n4082n238 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29 PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416 PDF