2N678 Search Results
2N678 Datasheets (164)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2N678 | Germanium Power Devices | Germanium Power Transistors | Scan | 377.51KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Motorola | Motorola Semiconductor Datasheet Library | Scan | 79.98KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 83.31KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 149.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 110.87KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 93.04KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Unknown | Vintage Transistor Datasheets | Scan | 53.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 92.2KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 33.72KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Semitron | Germanium Power Transistors | Scan | 777.02KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N678 | Solidev Semiconductors | Solid State Products (Transistor Guide) | Scan | 97.76KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6781 | International Rectifier | TO-39 Package N-Channel HEXFET | Scan | 102.24KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6781 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 83.37KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6781 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 110.76KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6781 | Unknown | FET Data Book | Scan | 64.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6781 | Semelab | MOS Transistors | Scan | 76.03KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6781 | Topaz Semiconductor | 60 V, 06 ?, N-channel enhancement-mode D-MOS power FET | Scan | 101.8KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6782 | Fairchild Semiconductor | TRANS MOSFET N-CH 100V 3.5A 3TO-205AF | Original | 91.03KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6782 | International Rectifier | HEXFET TRANSISTORS | Original | 133.16KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6782 | Microsemi | N Channel MOSFET; Package: TO-39; | Original | 95.41KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N678 Price and Stock
International Rectifier 2N67872N6787 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N6787 | 287 | 93 |
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Buy Now | ||||||
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2N6787 | 312 | 1 |
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Buy Now | ||||||
Infineon Technologies AG JANHCA2N6782MOSFET - Waffle Pack (Alt: JANHCA2N6782) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JANHCA2N6782 | Waffle Pack | 100 |
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Get Quote | ||||||
Keysight Technologies N6785ASource Measure Units - SMUs Source/Measure Unit for Battery Drain Analysis, multiple ranges, 80 W, dbl-wide |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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N6785A |
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Get Quote | ||||||||
Keysight Technologies N6784ASource Measure Units - SMUs Source/Measure Unit, General Purpose, 4-Quadrant, 20V/1A or 6V/3A, 20W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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N6784A |
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Get Quote | ||||||||
Keysight Technologies N6782ASource Measure Units - SMUs Source/Measure Unit for Functional Test, 2-Quadrant, 20V/1A or 6V/3A, 20W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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N6782A |
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Get Quote | ||||||||
2N678 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2N67
Abstract: 2N6784 TB334
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Original |
2n6784o-205af2n67tb334 | |
2N6786Contextual Info: Standard Power MOSFETs 2N6786 T j , JUNC TION TEMPERATURE fC T j, JUNCTION TEMPERATURE *C) 92GS-4412? Fig. 8 - B re a k d o w n v o lta g e vs. te m p e ra tu re . O 10 20 30 92GS-44128 Fig. 9 - N o rm a liz e d o n -re s is ta n c e vs. te m p e ra tu re . |
OCR Scan |
2n678692gs-4412992gs-4413192gs-44132 | |
2N6784Contextual Info: 2N6784 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. |
Original |
2n6784o205af11-oct-02 | |
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Contextual Info: TE D DEI ^ EI ci347clt.3 0QlUb4d UnTtrode cokh 9347963 UN I TRODE CORP 92D POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel 10542 D r -3*1-01 2N6787 2N6788 FEATURES • Fast S w itch in g • Low Drive C urren t DESC RIPTIO N T h e U n itrode pow er M OSFET design utilizes th e m ost advanced technology available. |
OCR Scan |
i347c | |
IRFE120Contextual Info: 2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 |
Original |
2n6788lcc4irfe12000a/s | |
100V 60A Mosfet
Abstract: 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode
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Original |
2n6788irff120o-205af100v 60a mosfet+2 | |
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Contextual Info: 2N6788 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. |
Original |
2n6788o205af11-oct-02 | |
1RF9130
Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
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OCR Scan |
jantx2n6782jantx2n6784jantx2n6786jantx2n6788+16 | |
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Contextual Info: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING |
Original |
2n6782o-205af | |
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Contextual Info: 2N678C Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15m @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10 |
Original |
2n678c | |
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Contextual Info: 2N678 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15m @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10 |
Original |
2n678 | |
2N6786UContextual Info: 2N6782U, 2N6784U and 2N6786U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET compliant Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in thru |
Original |
2n6782u2n6784u2n6786umil-prf-19500/556+3 | |
2n6789Contextual Info: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability |
OCR Scan |
c13m7citqg1g542n67892n6790 | |
2N6788
Abstract: 2n6790
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Original |
2n67882n6790mil-prf-19500/555t4-lds-0164 | |
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2N6782
Abstract: 2n6800 LH0063 QPL-19500
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OCR Scan |
2n67822n6796o-2i35afo-205af+5 | |
2N1146
Abstract: GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 2N278 TO36 2N1031B 2N1982
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OCR Scan |
2n2782n6772n677a2n677b+13 | |
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Contextual Info: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING • MOTOR CONTROLS |
Original |
2n678200a/ms300ms | |
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Contextual Info: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited |
OCR Scan |
2n6788t0-205alh0q63 | |
2N6784
Abstract: TB334
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Original |
2n6784o-205aftb334 | |
2N6782
Abstract: TB334
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Original |
2n6782o-205aftb334 | |
MOSFET 2N6782Contextual Info: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING |
Original |
2n6782o-205af2n6782-jqr2n6782-jqr-b+1 | |
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Contextual Info: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING |
Original |
2n6782o-205af2n6782-jqr-b2n6782lcc4+4 | |
2N6782LCC4
Abstract: IRFE110
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Original |
2n6782lcc4irfe110300ms | |
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Contextual Info: 2N6786+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)1.2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) |
Original |
2n6786 | |