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    2N678 Search Results

    2N678 Datasheets (164)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N678
    Germanium Power Devices Germanium Power Transistors Scan PDF 377.51KB 4
    2N678
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 79.98KB 1
    2N678
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.31KB 1
    2N678
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 149.73KB 1
    2N678
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 110.87KB 1
    2N678
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 93.04KB 1
    2N678
    Unknown Vintage Transistor Datasheets Scan PDF 53.7KB 1
    2N678
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.2KB 1
    2N678
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.72KB 1
    2N678
    Semitron Germanium Power Transistors Scan PDF 777.02KB 6
    2N678
    Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF 97.76KB 2
    2N6781
    International Rectifier TO-39 Package N-Channel HEXFET Scan PDF 102.24KB 1
    2N6781
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.37KB 1
    2N6781
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 110.76KB 1
    2N6781
    Unknown FET Data Book Scan PDF 64.43KB 1
    2N6781
    Semelab MOS Transistors Scan PDF 76.03KB 1
    2N6781
    Topaz Semiconductor 60 V, 06 ?, N-channel enhancement-mode D-MOS power FET Scan PDF 101.8KB 3
    2N6782
    Fairchild Semiconductor TRANS MOSFET N-CH 100V 3.5A 3TO-205AF Original PDF 91.03KB 7
    2N6782
    International Rectifier HEXFET TRANSISTORS Original PDF 133.16KB 7
    2N6782
    Microsemi N Channel MOSFET; Package: TO-39; Original PDF 95.41KB 2
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    2N678 Price and Stock

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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2N6787 287 93
    • 1 -
    • 10 -
    • 100 $3.86
    • 1000 $3.45
    • 10000 $3.25
    Buy Now
    Rochester Electronics 2N6787 312 1
    • 1 -
    • 10 -
    • 100 $3.09
    • 1000 $2.76
    • 10000 $2.60
    Buy Now

    Infineon Technologies AG JANHCA2N6782

    MOSFET - Waffle Pack (Alt: JANHCA2N6782)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas JANHCA2N6782 Waffle Pack 100
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    Keysight Technologies N6785A

    Source Measure Units - SMUs Source/Measure Unit for Battery Drain Analysis, multiple ranges, 80 W, dbl-wide
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics N6785A
    • 1 $13855.48
    • 10 $13855.48
    • 100 $13855.48
    • 1000 $13855.48
    • 10000 $13855.48
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    Keysight Technologies N6784A

    Source Measure Units - SMUs Source/Measure Unit, General Purpose, 4-Quadrant, 20V/1A or 6V/3A, 20W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics N6784A
    • 1 $7141.42
    • 10 $7141.42
    • 100 $7141.42
    • 1000 $7141.42
    • 10000 $7141.42
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    Keysight Technologies N6782A

    Source Measure Units - SMUs Source/Measure Unit for Functional Test, 2-Quadrant, 20V/1A or 6V/3A, 20W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics N6782A
    • 1 $8124.23
    • 10 $8124.23
    • 100 $8124.23
    • 1000 $8124.23
    • 10000 $8124.23
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    2N678 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N67

    Abstract: 2N6784 TB334
    Contextual Info: [ /Title 2N67 84 /Subject (2.25A , 200V, 1.500 Ohm, NChannel Power MOSFET) /Autho r () 2N6784 Data Sheet December 2001 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.25A, 200V The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for


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    2n6784o-205af2n67tb334 PDF

    2N6786

    Contextual Info: Standard Power MOSFETs 2N6786 T j , JUNC TION TEMPERATURE fC T j, JUNCTION TEMPERATURE *C) 92GS-4412? Fig. 8 - B re a k d o w n v o lta g e vs. te m p e ra tu re . O 10 20 30 92GS-44128 Fig. 9 - N o rm a liz e d o n -re s is ta n c e vs. te m p e ra tu re .


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    2n678692gs-4412992gs-4413192gs-44132 PDF

    2N6784

    Contextual Info: 2N6784 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


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    2n6784o205af11-oct-02 PDF

    Contextual Info: TE D DEI ^ EI ci347clt.3 0QlUb4d UnTtrode cokh 9347963 UN I TRODE CORP 92D POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel 10542 D r -3*1-01 2N6787 2N6788 FEATURES • Fast S w itch in g • Low Drive C urren t DESC RIPTIO N T h e U n itrode pow er M OSFET design utilizes th e m ost advanced technology available.


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    i347c PDF

    IRFE120

    Contextual Info: 2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8


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    2n6788lcc4irfe12000a/s PDF

    100V 60A Mosfet

    Abstract: 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode
    Contextual Info: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING


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    2n6788irff120o-205af100v 60a mosfet+250v 60a mosfet100v 60a diode PDF

    Contextual Info: 2N6788 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


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    2n6788o205af11-oct-02 PDF

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX 2N6782 2N6784 2N6786 2N6788 JANTX2N6790


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    jantx2n6782jantx2n6784jantx2n6786jantx2n6788+16jantx2n6790jantx2n6792jantx2n6794jantx2n6796jantx2n6798jantx2n68001rf9130jantx2n1800jan2n17932n68492n19152n6845563 j 400vjan2n3095t0-209acirff9120 PDF

    Contextual Info: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING


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    2n6782o-205af PDF

    Contextual Info: 2N678C Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15m @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10


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    2n678c PDF

    Contextual Info: 2N678 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15m @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10


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    2n678 PDF

    2N6786U

    Contextual Info: 2N6782U, 2N6784U and 2N6786U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET compliant Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in thru


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    2n6782u2n6784u2n6786umil-prf-19500/556+3o-205af2n67822n6784 PDF

    2n6789

    Contextual Info: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability


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    c13m7citqg1g542n67892n6790 PDF

    2N6788

    Abstract: 2n6790
    Contextual Info: 2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and


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    2n67882n6790mil-prf-19500/555t4-lds-0164 PDF

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Contextual Info: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


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    2n67822n6796o-2i35afo-205af+52n6800t0-205af2n6802lh0063qpl-19500 PDF

    2N1146

    Abstract: GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 2N278 TO36 2N1031B 2N1982
    Contextual Info: 55 GERM ANIUM POWER TRANSISTORS CURREIV JT G A IN S A T U R A T IO IM V O LT A G E S @ T Y PE N U M BER C A SE T YPE V CBO V 15 AIV P G E mm 2N278 2N677 2N677A TO-36 TO-3 TO-3 2N677B 2N677C 2N678 V C EO V EBO V UM PIVIP Obse V C ER V ve — i'' V C ES V


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    2n2782n6772n677a2n677b+132n677c2n6782n678a2n678b2n1146germanium* 2n10992n11002n15572n13582n1558to362n1031b2n1982 PDF

    Contextual Info: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING • MOTOR CONTROLS


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    2n678200a/ms300ms PDF

    Contextual Info: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited


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    2n6788t0-205alh0q63 PDF

    2N6784

    Abstract: TB334
    Contextual Info: 2N6784 Data Sheet April 1998 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.25A, 200V • rDS ON = 1.500Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device


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    2n6784o-205aftb334 PDF

    2N6782

    Abstract: TB334
    Contextual Info: 2N6782 Data Sheet November 1998 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 3.5A, 100V • rDS ON = 0.600Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device


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    2n6782o-205aftb334 PDF

    MOSFET 2N6782

    Contextual Info: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING


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    2n6782o-205af2n6782-jqr2n6782-jqr-b+1mosfet 2n6782 PDF

    Contextual Info: 2N6782 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING


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    2n6782o-205af2n6782-jqr-b2n6782lcc4+42n6782lcc4-jqr-b2n6782smd2n6782smd-jqr-bo276ab PDF

    2N6782LCC4

    Abstract: IRFE110
    Contextual Info: 2N6782LCC4 IRFE110 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont)


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    2n6782lcc4irfe110300ms PDF

    Contextual Info: 2N6786+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)1.2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)


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    2n6786 PDF