2SB1236 Search Results

2SD1918

Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1

2SB1236

Abstract: 2SD1857 transistor 120v
Contextual Info: 2SB1236 Transistors Power Transistor -120V, - 1 ,5A 2SB1236 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = -1 20V) 2) Low collector output capacitance. (Typ. 30pF at V cb = - 1 0V) D 3) High transition frequency, (fr = 50MHz)

2SB1236A

Abstract: 2SB1275 2SD1857A 2SD1918 50MHZ
Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A !External dimensions (Units : mm) !Features 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ)

transistor 2SB1236

Abstract: 2SB1236 2SD1857
Contextual Info: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz)

Contextual Info: 2SB1130AM/2SB1236A h 7 > y 7 i i / I ransistors 2SB 1130AM 2SB1236A PNP y ' J - ¡ > Epitaxial Planar PNP Silicon Transistors 't'ii^ jiite ffl/M e d iu m Power Amp. • \Ü £ |3 |/D im e n s io n s Unit : mm 2SB 1236A 2SB 1130A M BV c e o = — 160V 6.8± 0.2

BF752

Abstract: transistor BF 199 2SB1236
Contextual Info: SPICE PARAMETER 2SB1236 by ROHM TR Div. * 2SB1236 PNP BJT model * Date: 2006/11/20 .MODEL 2SB1236 PNP + IS=450.00E-15 + BF=75.284 + VAF=6.5824 + IKF=1.0712 + ISE=450.00E-15 + NE=1.3466 + BR=318.62 + VAR=100 + IKR=4.1919 + ISC=1.4330E-9 + NC=1.6223 + NK=.57797

2sb1569a

Contextual Info: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )

2SB1186

Abstract: 2sb1186 equivalent 2SB1236 2SC4132 2SD1763 2SD1857 2SD2343
Contextual Info: Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 94L-268-A56 (96-175-C56) 276

d1763a

Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )

2SB1130M

Contextual Info: h 7 > y 7 $ / T ransistors 2SB1130M 2SB1236 2SB1130M/2SB1236 7 ° l s - J - m P N P '> '; = ] > h l 7 > y 7 . 2 Power Amp. Epitaxial Planar PNP Silicon Transistors • f ff t • ^Jf^TfiiH I/D im en sion s U n it: mm 1) r a ifit/i 7 <fo 3 (BVceo = —120V)o

2SD1857A

Contextual Info: 2SB1236A Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • 2SB1236A (ATVTV2) • high collector breakdown voltage BV qeo = —160 V high transition frequency • low output capacitance • complementary pair with 2SD1857A

d2400a

Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s

2sd1763

Contextual Info: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)

Contextual Info: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)

2SB1275

Abstract: 2SB1236A 2SD1918
Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor -1 6 0 V , - 1 .5A 2SB1236A •Features 1) High breakdown voltage.(BVcEO = -1 60V) 2) Low collector output capacitance. (Typ. 30pF at V cb = 10V) 3) High transition frequency.(fr = 50MHz) 4) Complements the 2SD1918/2SD1857A.

2SB1275

Abstract: 2SD1857A 2SD1918 2SD2211 T100
Contextual Info: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD221112SD191812SD1857A •Features 1) High breakdown voltage.(BVcEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at Vcb = 10V) 3) High transition frequency.(fr = 80MHz) 4) Complements the 2SB1275/2SB1236A.

D1763

Abstract: MARKING HRA SC4132 2SD1763 transistor D1857 B1186
Contextual Info: 2SB1236 / 2SB1186 2SC4132 / 2SD185712SD2343 / 2SD1763 Transistors Power Transistor — 120V, — 1.5A 2S B 1236 / 2S B 1186 •F e atu res 1 ) High breakdown voltage. iB V cso — — 120V) 2 ) Low collector output capacitance. (Typ. SO pFatV cB5 — 10V)

Contextual Info: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)

2SB1236A

Contextual Info: SPICE PARAMETER 2SB1236A by ROHM TR Div. * 2SB1236A PNP BJT model * Date: 2006/11/20 .MODEL 2SB1236A PNP + IS=450.00E-15 + BF=75.284 + VAF=6.5824 + IKF=1.0712 + ISE=450.00E-15 + NE=1.3466 + BR=318.62 + VAR=100 + IKR=4.1919 + ISC=1.4330E-9 + NC=1.6223 + NK=.57797

2SB1275

Abstract: 2SB1236A 2SD1857A 2SD1918 50MHZ
Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.

2SD1763 transistor

Abstract: 2SD1763 2SD2343 2SB1166 2SB1186 2SB1236 2SC4132 2SD1857 transistor 120v 40X40X0
Contextual Info: 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors I 120V, —1.5A Power Transistor 2SB1236 / 2SB1186 • A b s o lu t e m axim um ratings (T a = 2 5 'C ) •F e a tu re s 1) H ig h b re a k d o w n v o lta g e . (B V ceo = — 1 2 0 V )

Contextual Info: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz)

2SB1130

Contextual Info: Is "7 > y 7* $ ./Transistors 2SB1130M/2SB1236 2SB1130M 2SB1236 E p ita x ia l P la n a r P N P • • » ft X T ^\y— r m k ? £ 3 r '> 4 1 P N P S ilic o n it B ffl/M e d iu m h 7 > y * 2 T r a n s is to r s P ow er A m p. i t f t i 't f & E I / ' D i m e n s i o n s ( U n it : m m )

2SD1763A

Abstract: 2sd2400a 2SB1186A 2SB1275 2SB1236A 2SB1569A 2SD1857A 2SD1918 2SD2211 2SB1569
Contextual Info: Transistors 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A 96-612-A58 (96-744-C58) 277