2SD1857 Search Results

Contextual Info: UTC 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High breakdown voltage. BVCEO=120V *Low collector output capacitance.(Typ.20pF at VCB=10V) *High transition frequency.(fT=80MHz) 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)

2SD1875

Abstract: 2Sd-1875
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION

100V 2A MPT3

Abstract: 2SB1236 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 2A 2SC4132 / 2SD1857 zDimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz)

2SD2343

Abstract: 2SB1236 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 !External dimensions (Units : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 2SC4132 Collector power dissipation 2 2SD1857 2SD2343

Contextual Info: / T ransistors 2SD1665M/2SD1857 h -7 > V *$ 2SD1665M I t N P NPower'>•;=!> Amp. 2SD1857 Epitaxial Planar NPN Silicon Transistors sir >J V; V d i-r • W K \ l i ± [ 3 / Dinlens' ons U n it: mm 1) is] H E 7 &-5 (BVceo = 120V)o 2) f T i^ i *\ , Cob^F 'f&t'vo

2SD1918

Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1

2SD1665

Abstract: 2SD1857A
Contextual Info: 2SD1665AM/2SD1857A h -p > v ^ £ /T ra n s is to rs 2SD1665AM 2SD1857A • X tf £ y 7 JU7° \s — NPN y>J = l> Epitaxial Planar NPN Silicon Transistors Power Amp. WA \f&[3l/Dimensions Unit : mm « 1) iHiiW15T&#39;<fc 5 o 2SD1665AM B V ceo=160V 2 ) f T* ' < ,

2SB1236

Abstract: 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC PC 2 1 W Tj Tstg 150 −55 to +150 °C °C Collector current Collector power dissipation

2SD1857

Abstract: RE11
Contextual Info: SPICE PARAMETER 2SD1857 by ROHM TR Div. * 2SD1857 NPN BJT model * Date: 2006/11/20 .MODEL 2SD1857 NPN + IS=450.00E-15 + BF=90.847 + VAF=7.7000 + IKF=1.9224 + ISE=450.00E-15 + NE=1.4462 + BR=84.284 + VAR=100 + IKR=.28392 + ISC=2.3425E-9 + NC=1.8142 + NK=.67816

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251

2SB1186

Abstract: 2sb1186 equivalent 2SB1236 2SC4132 2SD1763 2SD1857 2SD2343
Contextual Info: Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 94L-268-A56 (96-175-C56) 276

d1763a

Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )

2SD1857A

Contextual Info: 2SB1236A Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • 2SB1236A (ATVTV2) • high collector breakdown voltage BV qeo = —160 V high transition frequency • low output capacitance • complementary pair with 2SD1857A

2SB1236

Abstract: 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 PC 2 Collector current 2SC4132 Collector power dissipation Junction temperature

2SD1857L

Abstract: 2SD1857
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L

d2400a

Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s

Model 450

Abstract: 2SD1857A
Contextual Info: SPICE PARAMETER 2SD1857A by ROHM TR Div. * 2SD1857A NPN BJT model * Date: 2006/11/20 .MODEL 2SD1857A NPN + IS=450.00E-15 + BF=101.86 + VAF=9.5235 + IKF=2.0711 + ISE=450.00E-15 + NE=1.4191 + BR=22.448 + VAR=100 + IKR=.96913 + ISC=31.986E-12 + NC=1.3523 + NK=.68874

2sd1763

Contextual Info: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)

Contextual Info: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)

TO92NL

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION

2SD1857L

Abstract: QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL *Pb-free plating product number: 2SD1857L

2SB1275

Abstract: 2SB1236A 2SD1918
Contextual Info: 2SB1275 / 2SB1236A Transistors Power Transistor -1 6 0 V , - 1 .5A 2SB127512SB1236A •Features 1) High breakdown voltage.(BVcEO = -1 60V) 2) Low collector output capacitance. (Typ. 30pF at V cb = 10V) 3) High transition frequency.(fr = 50MHz) 4) Complements the 2SD1918/2SD1857A.

2SB1236

Abstract: 2SD1857
Contextual Info: Power Transistor 120V, 2A 2SD1857 zDimensions (Unit : mm) 2SD1857 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz)