0D147 Search Results

transistor et 455

Abstract: transistor et 454
Contextual Info: N AMER PHI LI PS/ DI SCRETE DbE D PowerMOS transistor • bb53*131 0D147bb 7 ■ BCZ3$ l f - ~ _ 3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

cr 406 transistor

Abstract: BUZ54
Contextual Info: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

Contextual Info: International 4Ö55M5E 0D1474Q bflT • INR »¡»Rectifier HEXFET Power MOSFET • • • • • • • PD-9.902 IRF640S INTERNATIONAL RECTIFIER bSE » Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching

BUZ351

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor = ObE D BUZ351 ^ ^ _ 3 • bki53ci31 0D147tt May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

a13c

Abstract: 7C166 CY7C164 CY7C166 7C166-20 CY7C164-12VC 7C164-12 7C164 CY7C164-20PC
Contextual Info: CY7C164 CY7C166 m 'w CYPRESS 16K x 4 Static RAM Features Functional Description • High speed — 15 ns T he CY7C164 and CY7C166 are high-per­ form ance CMOS static RAM s organized as 16,384 by 4 bits. Easy mem ory expan­ sion is provided by an active LO W chip en­

I63R

Abstract: BFS150 FM MICROPHONE BFS170 automatic change over switch circuit diagram BPF filter rf AN3988NFHP BFS160 78dBs BFS165
Contextual Info: Panasonic ICs for Video Camera AN3988NFHP Stereo Audio-Signal Processor 1C for 8-mm Video Camera • Overview The A N 3988N FH P is a stereo audio signal processor 1C for 8-mm video camera. It provides full audio signal processing functions for 8-m m video cam era, making

Contextual Info: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the

UC3657

Contextual Info: INTEGRATED CIRCUITS UC3657 UNITRODE Triple Tri-State Power Driver FEATURES DESCRIPTION Operating Supply Voltage to 32V Load Current Capability to 3A Built-In Thermal Protection Clamp Diodes Included for Driving Inductive Loads 2 5W Multiwatt Power-Tab Package

Contextual Info: Panasonic ICs for Video Camera AN3988NFHP Stereo Audio-Signal Processor 1C for 8-mm Video Camera • Overview The A N 3988N FH P is a stereo audio signal processor 1C for 8-mm video camera. It provides full audio signal processing functions for 8-m m video cam era, making

Contextual Info: ADVANCE FLASH MEMORY 256K x 8 S martV oltage, BO O T BLO CK FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8jiA at 5V Vcc; 2p.A at 3.3V Vcc MAX • SmartVoltage* Technology (SVT):

Contextual Info: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is

BUZ384

Contextual Info: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2*?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is

TCXO mtbf

Abstract: ZO 607 MA 7A ABT22V10-7A palasm 1995se 300Fl
Contextual Info: P hilips S em iconductors P roduct specification Low noise, high drive, metastable immune, PLD DESCRIPTION ABT22V10-7 PIN CONFIGURATIONS The ABT22V10 is a versatile PAL device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 7.5ns worst case which has

LTC1429

Contextual Info: r r w m TECHNOLOGY FCRTURCS _ LTC1550/LTC1551 Low Noise, Switched C ap acito r Regulated Voltage Inverters D C S C R IP T IO n • Regulated Negative Voltage from a Single Positive Supply ■ Low Output Ripple: Less Than ImVp.p Typ ■ High Charge Pump Frequency: 900kHz Typ

L298 n pin diagram

Contextual Info: y C IR C U IT S U N I-m O O E 1298 Dual Full-Bridge Power Driver FEATURES DESCRIPTION • O peratin g S u ppiy Voltage up to 46V The L29 8 is a pow er integrated c ir c u it usable for d riv in g resistive and in d u c tiv e loads. T his d e v ic e .c o n ta in s fo u r push -p u ll d rive rs w ith sepa rate logic inpu ts. Two ena ble in p u ts

BUZ348

Contextual Info: N AMER PHILIPS/DISCRETE ObE PowerMOS transistor D • tab S 3 e]31 0014730 BUZ348 . T - 3 < M " 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ54A

Abstract: IEC134 BUZ54
Contextual Info: N AMER PHILIPS/DISCRETE übE D PowerMOS transistor " • ^53=131 0014724 S ■ BUZ54A T - 2^-/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: D S 1647/D S1647LPM PRELIMINARY DALLAS SEMICONDUCTOR D S1647/D S1647LPM Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT A18 • Integrated NV SRAM, real time clock, crystal, powerfail control circuit and lithium energy source A16 A14 B 3 A12 | 4 • Optional low profile socketable module

HCC4046B

Abstract: ZENER 5V2 4046B
Contextual Info: S 6 S-THOMSON D7C D I 7ia'iB37 DD14772 1 I C U S / H IO S i T T l INTEGRATED CIRCUIT — - 1 h c c /h c f 40«B | T-50-17 f _ 41C 08785 P R E L IM IN A R Y D A TA M ICROPOW ER P H A S E -L O C K ED LOOP • • • • • • • • • • • •

Contextual Info: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

automatic brake failure indicator

Abstract: servo Spin 12 32H6840
Contextual Info: SSI 32H6840 m Advanced Servo and Spindle Predriver with DSP m s u s k m s A TDK Group/Company Advance Information February 1996 DESCRIPTION FEATURES The SSI 32H6840 Advanced Servo and Spindle Predriver with DSP is a CMOS monolithic integrated circuit housed in a 128-lead QFP package, operates

LT3526

Contextual Info: rruvm LT 116 0 /LTn 6 2 TECHNOLOGY Half-/Full-Bndge N-Channel Power MOSFET Drivers F€OTUfl€S DCSCRICTIOn • Floa ting Top D rive r S w itches Up to 60V The LT 116 0 / LT 116 2 are cost effective half-/full-bridge ■ Drives Gate of To p N-Channel M O S F E T

H7D TRANSMITTER

Contextual Info: Whal HEW LETT WLEM PACKARD Fiber Optic Transmitter and Receiver Data Links for 125 MBd Technical Data HFBR-1115T T ransm itter HFBR-2115T R eceiver F eatures D escription • Full Compliance w ith the Optical Performance Requirements o f the FDDI PMD Standard