300FL Search Results

Contextual Info: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.)

bargraph LCD

Abstract: TC818D 40 segment bargraph LCD 101 segment bargraph LCD TC818 36643
Contextual Info: Semiconductor, Inc. TC818A TC818D* * CONTACT FACTORY AUTO-RANGING ANALOG-TO-DIGITAL CONVERTER WITH 3-1/2 DIGIT AND BAR-GRAPH DISPLAYS FORAVA,LAB,L,TY FEATURES • 3-1/2 Digit Numeric Plus 40-Segment Bar-Graph LCD Drivers ■ Annunciator Outputs Permit Customizing of LCD

V48SR05013

Abstract: S48SE
Contextual Info: FEATURES High efficiency: 91.0% @ 5.0V/13A Size: 33.0 x 22.9 x 9.5 mm 1.3” x 0.90” x 0.37” Industry standard footprint and pinout Fixed frequency operation Input UVLO and OVP OTP and output OCP, OVP Output voltage trim: -20%, +10% Monotonic startup into normal and

S48SE

Contextual Info: FEATURES High efficiency: 89.0% @ 2.5V/20A Size: 33.0 x 22.9 x 9.5 mm 1.30”x0.90”x0.37” Industry standard footprint and pinout Fixed frequency operation SMD and through-hole versions Input UVLO and OVP OTP and output OCP, OVP Output voltage trim: -20%, +10%

51A33

Abstract: GE diode 1N5061 E65 core bobbin
Contextual Info: May 1997 3^ ,Micro Linear ML4831 Electronic Ballast Controller GENERAL DESCRIPTION FEATURES The ML4831 is a complete solution for a dimmable, high power factor, high efficiency electronic ballast. Contained i n the ML4831 are controllers for "boost" type power

Contextual Info: FEATURES  High efficiency: 90.5% @ 3.3V/20A  Size: 58.4mm x 22.8mm x 8.4mm 2.30”x0.90”x0.33”  Industry standard pin out  SMT and through-hole versions  Fixed frequency operation: 350KHz  Input UVLO, Output OCP, OVP, OTP  1500V isolation

27S43

Contextual Info: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs

OA128

Contextual Info: Product Specifications PROMs/SPROMs R29700 Series R a y ttM M 4096 x 8 R29771/R29773 Standard PROMs and Power-Switched SPROMs Features/Benefits • Devices are available in both commercial <0°C to +75°C and military -55°C to +125°C) temperature range

Contextual Info: FEATURES  High Efficiency: 88% @ 1.2V/25A  Size: 58.4mm x 22.8mm x 8.4mm 2.30”x0.90”x0.33”  Industry standard pin out  SMT and through-hole versions  Fixed frequency operation: 350KHz  Input UVLO, Output OCP, OVP, OTP  1500V isolation

E48SR3R320

Contextual Info: FEATURES Š High efficiency: 90.5% @ 3.3V/20A Š Size: 58.4mm x 22.8mm x 8.4mm 2.30”x0.90”x0.33” Industry standard pin out Š Š SMT and through-hole versions Š Fixed frequency operation: 350KHz Š Input UVLO, Output OCP, OVP, OTP Š 1500V isolation

L78N05

Abstract: L70MO5 my 50 L78W 178N05 L78N00
Contextual Info: L 7 8 N O O v > ;-X Na C1 16 6 B =c- J 2066 O Na 1 1 6 6 a ¿ ; 0> L I f ' k 5-24V < £ X ' r . F Ä i B i g » >) 5 00mA £ l ’ •W'" U if ^ 1/ - ^ • & tlW ± J* /" ,/ L78N05 : 5V L78N0Ó : 6V L78N07 : 7V L7ÖW10 : 10V L78WI ? : 12V L78N15 : 15V L J ^ s à : 6V

e48sr3r320nrfa

Contextual Info: FEATURES Š High Efficiency: 88% @ 1.2V/25A Š Size: 58.4mm x 22.8mm x 8.4mm 2.30”x0.90”x0.33” Š Industry standard pin out Š SMT and through-hole versions Š Fixed frequency operation: 350KHz Š Input UVLO, Output OCP, OVP, OTP Š 1500V isolation

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT RS-232 LINE DRIVER/RECEIVER T h e /JPD4715A is a high-voltage silicon gate CM O S lin e d irver/reciever co nfo rm ing to th e EIA-232-D standard . It can operate w ith a sin g le +5 V pow er so u rce b ecause It is provided w ith a DC-DC co n verter. In

Contextual Info: TP3058, TP3059 National À jâ Semiconductor TP3058, TP3059 Microprocessor Compatible COMBO General Description The TP30S8, TP3059 family consists of a ¿¿-law and A-iaw monolithic PCM COMBO set utilizing the A /D and D /A con­ version architecture shown in Figure 1 and a parallel I/O

smd transistor xg

Abstract: smd transistor JE transistor bipolar 500ma transistor smd IY
Contextual Info: CS8128 5V Linear Controller/Driver Description The CS8128 contains all the necessary control circuitry to implement a 5V lin­ ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS8128 with a TIP42

2SK941

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSffl 2SK941 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. 51 MAX RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. . 4-Volt Gate Drive . Low Drain-Source ON Resistance

LW385

Abstract: 28S166 DATA TRANSISTOR MOTOROLA TYPE MRA 14 /17 /25 ksp 13 f10 M38510 cross index 82S190 a2-o2 27S191 27s19 lw38510
Contextual Info: MIL-*M-38510/210D Win-MIL-*M-38510/210C 31 January 1984 MILITARY SPECIFICATION nnM«Ii.C„R.0CI R C U I T S * DISIT*L, 16.384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON This specification Is approved for use by all Depart­

wv4 sot-23

Abstract: sot-23 wv4 wv4 surface mount wv4 5 sot-23 bjt ce amplifier application LA 7625 RF2314 F2314 WV4 SOT23 WV4 sot
Contextual Info: RFM RF2314 Preliminary M ICRO-DEVICES G E N E R A L PU RPO SE LOW N O IS E A M P L IF IE R T y p ic a l A p p lic a t io n s • Broadband Gain Blocks • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • Oscillator Loop Amplifiers

5962-8765701gx

Abstract: 5962-8765701 BYY15 1590/BGAJC
Contextual Info: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMICN/A STANDARDIZED MILITARY DRAWING TH IS DRAW ING IS AVAILABLE FOR U SE B Y A LL DEPARTM ENTS A N D A G EN C IES O F THE DEPARTM ENT O F D EF EN SE A M S C N/A

S48SE

Contextual Info: FEATURES High efficiency: 85.0% @ 1.5V/25A Size: 33.0 x 22.9 x 9.5 mm 1.30”x0.90”x0.37” Industry standard footprint and pinout Fixed frequency operation SMD and through-hole versions Input UVLO and OVP OTP and output OCP, OVP Output voltage trim: -20%, +10%

S48SE

Abstract: V48SR
Contextual Info: FEATURES High efficiency: 90.5% @ 15V/4.4A Size: 33.0 x 22.9 x 9.5 mm 1.30”x0.90”x0.37” Industry standard footprint and pinout Fixed frequency operation SMD and through-hole versions Input UVLO and OVP OTP and output OCP, OVP Output voltage trim: -15%, +10%

Contextual Info: , < Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6049 MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . . . designed for general-purpose switching and amplifier applications POWER TRANSISTOR

GE SCR 1000

Abstract: H11C1 10KC2 10KI1 10KO H11C2 H11C3 JK30 H11C1 GE
Contextual Info: G E SOLI» STÄTE 01 D E | 3 fl 7 5 0 f l l □ D I T 714 1 optoelectronic Specifications . T - 4 / - S “7 Photon Coupled Isolator H11C1,H11C2,H11C3 Ga As Infrared Emitting Diode & Light Activated SCR - M ILLIM ETERS seatino MIN. A T he G E Solid State H 11C 1, H11C2 and H 1 1C3 are gallium arsenide,

lc 3101

Abstract: k 351 transistor 2sd darlington L001 transistor Mu
Contextual Info: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) 10.0 • damper diode is incorporated • built-in resistors between base and