CY6264 Search Results

soic 28

Contextual Info: CY6264 8K x 8 Static RAM Features power-down feature CE1 , reducing the power consumption by over 70% when deselected. The CY6264 is packaged in a 450-mil (300-mil body) SOIC. • 55, 70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE

CY6264

Contextual Info: PRELIMINARY active HIGH chip enable CE2 , and active LOW output enable (OE) and threeĆstate D drivers. Both devices have an automatic D powerĆdown feature (CE ), reducing the power consumption by over1 70% when deĆ D selected. The CY6264 is in a 330ĆmilĆwide

external RAM ic 6264

Abstract: 6264 EPROM
Contextual Info: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.

Contextual Info: PRELIMINARY T R ^ cy pr ess CY6264 8 K x 8 Static R A M Features • 55 ,7 0 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEi, CEj , and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­

CY6264

Abstract: CY7C164 CY7C166 CY7C185 CY7C187
Contextual Info: Qualification Report January 1997, QTP# 96453 Version 1.0 64K SRAM, RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C185/186 8K x 8 Static RAM, OE & CE, Common I/O CY6264 8K x 8 Static RAM, OE & CE, Common I/O CY7C161/162 16K x 4 Static RAM, OE & CE, Separate I/O

CY6264

Abstract: hyundai CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C187 EME-6300H CY7C6264
Contextual Info: Qualification Report December, 1994, QTP# 94446 Version 1.0 CY6264 8K x 8 Static R/W RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

STATIC RAM 6264

Abstract: 6264 static RAM 6264 RAM ram 6264 6264 CY6264 OC821 62645
Contextual Info: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state drivers. Both devices have an automatic power-down feature (CEi), reducing the power consumption by over 70% when de­ selected. The CY6264 is packaged in a

cy6264-70snxc

Abstract: CY6264 CY6264-55SNXC CY6264-55SNXI CY6264-70SNC CY6264-70SNI CY6264-70SNXI
Contextual Info: CY6264 8K x 8 Static RAM Features Functional Description • Temperature Ranges The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE)

STATIC RAM 6264

Abstract: 6264 RAM 6264 RAM 6264 CY6264 CY6264-55SC CY6264-55SNC CY6264-55SNXC CY6264-70SC CY6264-70SNC
Contextual Info: CY6264 8K x 8 Static RAM Features power-down feature CE1 , reducing the power consumption by over 70% when deselected. The CY6264 is packaged in a 450-mil (300-mil body) SOIC. • 55, 70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE

CY6264

Abstract: CY7C164 CY7C166 CY7C185 CY7C187
Contextual Info: Qualification Report December 1996, QTP# 95311, Version 1.1 64K SRAM, RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C185/186 8K x 8 Static RAM, OE & CE, Common I/O CY6264 8K x 8 Static RAM, OE & CE, Common I/O CY7C161/162 16K x 4 Static RAM, OE & CE, Separate I/O

Contextual Info: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription

6264-70

Contextual Info: CY6264 P YP v « *1 X X 8K x 8 Static RAM over 70% when deselected. The CY6264 is packaged in a 450-mil 300-mil body SOIG. Features • 55, 70 n s a c c e s s t im e s • C M O S for o p t i m u m s p e e d / p o w e r • E a s y m e m o r y e x p a n s i o n w ith CE., C E 2, and O E f e a ­

FeRAM

Abstract: MRAM CY6264 CY9C6264 CY9C6264-70SI CY9C6264-70SNC CY9C6264-70SNI
Contextual Info: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form, fit, function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.

CY6264

Abstract: CY6264-55SNXI CY6264-70SNXC
Contextual Info: CY6264 8K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Commercial: 0°C to 70°C ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion

CY6264-70SNXC

Abstract: CY6264 CY6264-55SNXC CY6264-55SNXI CY6264-70SNC CY6264-70SNI CY6264-70SNXI 200-CE1
Contextual Info: CY6264 8K x 8 Static RAM Features Functional Description • Temperature Ranges The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE)

STATIC RAM 6264

Abstract: ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172 CY6264
Contextual Info: CYPRESS PRELIMINARY CY6264 8K x 8 Static RAM Features active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state • 55,70 ns access times drivers. Both devices have an automatic • CMOS for optimum speed/power power-down feature (CEi), reducing the

CY9C6264-70PC

Contextual Info: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form-, fit-, and function-compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.

CY62128

Abstract: W24256 BSI winbond Cross Reference UT621024 CY6264 K6T0808C1D K6T0808V1D UT6264 W24257 W24258
Contextual Info: Low-Power SRAM Cross Reference Guide 2 of 2 Density (bits) Org. (bits) 64K 8K*8 Company Part No. Operating Current mA (max.) (° C) Commercial Extended Industrial (0~70) (-20~85) (-40~85) Winbond W2465 UTRON UT6264 Cypress CY6264 100 W24256 60 Winbond 10 for LL

X7055

Abstract: sram cross reference W24256 cy6264 cross UT621024 UT6264 CY6264 K6T0808C1D bs62lv1024 W24257
Contextual Info: Low-Power SRAM Cross Reference Guide 1 of 2 Density (bits) Org. (bits) 64K 8K*8 Operating Temperature (° C) Part No. Operating Voltage (V) Winbond W2465 5 UTRON UT6264 5 Cypress CY6264 5 W24256 5V (4.5~5.5) X W24257 5V (4.5~5.5) X W24L257 3.15~ 5.5 X W24258

CY6264

Abstract: CY9C6264 CY9C6264-70SI CY9C6264-70SNC CY9C6264-70SNI 22758 FeRAM
Contextual Info: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form, fit, function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.

CY7C185

Abstract: CY6264 CY7C164 CY7C166 CY7C187
Contextual Info: Qualification Report December 1996, QTP# 95515/96024 Version 2.1 64K SRAM, RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C185/186 8K x 8 Static RAM, OE & CE, Common I/O CY6264 8K x 8 Static RAM, OE & CE, Common I/O CY7C161/162 16K x 4 Static RAM, OE & CE, Separate I/O

Contextual Info: CY6264-70SC-T2 1/2 IL16 ∗∗∗∗∗ C-MOS 64k (8k X 8) BIT STATIC –TOP VIEW– 1 NC VDD 28 (+5V) A4 2 21 27 WE 23 24 A5 3 26 CE2 25 2 A6 4 25 A3 A7 5 24 A2 A8 6 23 A1 3 4 5 6 7 8 A9 7 22 OE 9 10 A10 8 21 A0 26 20 CE1 A11 9 20 22 A12 10 19 I/O7 I/O0 11

Contextual Info: CY6264 8 K x 8 Static RAM 8 K × 8 Static RAM Features Functional Description • Temperature ranges: ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C The CY6264 is a high-performance CMOS static RAM organized

AN1064

Abstract: CY6264 CY6264-55SNXI CY6264-70SNXC
Contextual Info: CY6264 8 K x 8 Static RAM Features Functional Description • Temperature ranges: ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ High speed ❐ 55 ns ■ CMOS for optimum speed/power The CY6264 is a high-performance CMOS static RAM