BUZ351 Search Results

z351

Contextual Info: BUZ351 23 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T O -2 1 8 A C T O P VIEW • 11.5A, 400V • r D S o n = ° - 4 n • S O A is Power-Dissipation Limited >S O U R C E DRAIN • Nanosecond Switching Speeds

MOSFET 400V

Abstract: TB334 400v 5a mosfet 400V switching transistor 400v mosfet Diode 400V 5A n-Channel mosfet 400v power relay N-channel mosfet BUZ35 BUZ351
Contextual Info: BUZ351 Semiconductor Data Sheet 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2266.1 Features • 11.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ35 field effect transistor designed for applications such as

Contextual Info: l4 3 D 5 5 7 1 0DS3fin TT4 • HAS BUZ351 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 1 8 A C • 11.5 A, 400V T O P VIE W • rDS on) = 0 .4 fl • SOA is Power-Dissipation Limited SO URCE D R A IN

BUZ351

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor = ObE D BUZ351 ^ ^ _ 3 • bki53ci31 0D147tt May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

BUZ901P

Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
Contextual Info: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

transistor et 455

Abstract: transistor et 454
Contextual Info: N AMER PHI LI PS/ DI SCRETE DbE D PowerMOS transistor • bb53*131 0D147bb 7 ■ BCZ3$ l f - ~ _ 3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

bu245a

Abstract: 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15
Contextual Info: THOnSON/ DISTRIBUTOR SflE D 0QD5704 41T TCSK P o w er M O S FE Ts RF and BUZ-Series Power MOSFETs — N-Channel continued P a cka g e M a x im u m R a tin g s BVq s s (V) Id s (A) r DS(O N) O HM S 400 4 7 12 4.5 5.5 3.0 2.6 11.5 1.50 0.75 0.38 1.50 1.00

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

acrian inc

Abstract: CD2545 CD3424 Nec c3012 nec c1003 ACRIAN Elcoma texas SGS-ATES c426 SGS-Ates
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer BUX17 BUX17A BUX17B BUX17C BUX18 BUX18A BUX18B BUX18C BUX20 Inti Rectfr BUX20A BUX21 BUX22 Inti Rectfr BUX23 Inti Rectfr BUX24 Inti Rectfr BUX25 Inti Rectfr BUX26 BUX27 BUX28 BUX29 BUX30AVA BUX30AVB

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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