BUZ35 Search Results

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ358 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

ci237

Contextual Info: 3QE D / T T • 7^2i:]2 37J 305 ^ 7 3cî T ■ X -2 V 1 3 S G S -T H O M S O N « ^ i L E g T O i O © ! _ B U Z 3 5 4 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D Sfon BUZ354 500 V 0.8 n Id 8A • • • • HIGH SPEED SWITCHING

Contextual Info: N AflER PHILIPS/DISCRETE OLE D PowerMOS transistor • 0014550 7 BUZ358 r- -i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUZ358

Abstract: LDM80
Contextual Info: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

250w smps

Abstract: BUZ353
Contextual Info: /= 7 S G S -T H O M S O N ^7# MfgtHiimiltgTriMDfgS BUZ353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ353 500 V 0.6 fl 9.5 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C URRENT - 9.5A FOR UP TO 250W

z351

Contextual Info: BUZ351 23 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T O -2 1 8 A C T O P VIEW • 11.5A, 400V • r D S o n = ° - 4 n • S O A is Power-Dissipation Limited >S O U R C E DRAIN • Nanosecond Switching Speeds

BUZ353

Contextual Info: Sn SGS-THOMSON BUZ353 ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE B U Z353 . . . V dss R DS on 500 V 0 .6 Q I Id 9 .5 A AVALANC H E RUG G EDN ESS TECHNO LO G Y 100% AV ALANC HE TESTED REPETITIVE AVALANC HE DATA AT 100°C APPLICATIO NS . HIGH CURRENT, HIGH SPEED SW ITCHING

BUZ356

Abstract: T0218AA BUZ-356
Contextual Info: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ350

Abstract: IY TRANSISTOR BUZ35 at ma hi mvs
Contextual Info: N AUER P H I L I P S / D I S CR E TE DfaE D PowerMOS transistor ^ 53=131 0 0 1 4 7 5 2 7 BUZ350 T-3^-/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ356

Contextual Info: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ357 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

MOSFET 400V

Abstract: TB334 400v 5a mosfet 400V switching transistor 400v mosfet Diode 400V 5A n-Channel mosfet 400v power relay N-channel mosfet BUZ35 BUZ351
Contextual Info: BUZ351 Semiconductor Data Sheet 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2266.1 Features • 11.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ35 field effect transistor designed for applications such as

Contextual Info: l4 3 D 5 5 7 1 0DS3fin TT4 • HAS BUZ351 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 1 8 A C • 11.5 A, 400V T O P VIE W • rDS on) = 0 .4 fl • SOA is Power-Dissipation Limited SO URCE D R A IN

buz357

Abstract: Transistor 5331 MC 140 transistor
Contextual Info: N AMER PHILIPS/DISCRETE DfaE D » PowerMOS transistor bb53^31 0 DIM fiM3 BUZ357^_ ^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

buz354

Contextual Info: F ^ J ^ 7# , S G S - T H O M S O N BUZ354 llD gl^ IlLI(gTrMD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on BUZ354 500 V 0.8 Ü 8 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C U R R E N T -8 A FOR UP TO 200W SMPS

BUZ353

Abstract: 250w smps
Contextual Info: /= T SGS-THOMSON BUZ353 7 # RfflO »ilLIOT RDO i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on BUZ353 500 V 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS • HIGH CURRENT - 9.5A FOR UP TO 250W

SCHEMATIC 200w smps

Abstract: buz354
Contextual Info: ¿ = 7 S G S -T H O M S O N ^ T Z ^ Q W ilL tE m W Ö ! BUZ354 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V D SS BUZ354 500 V ^ D S o n 0.8 S2 'd 8A • • • • HIGH SPEED SWITCHING HIGH VOLTAGE - 500V FOR OFF-LINE SMPS HIGH CURRENT-8A FOR UP TO 200W SMPS

Contextual Info: 3DE r=J D • 7 ^ 2 3 7 JDG2T73S 1 ■ - ' P 3 c - l 3 SGS-THOMSON s 6 s' thomson ^ 7 # M M i d ü ( g ¥ ^ ! 0(g§ B U Z353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ353 Vqss 500 V ^DSton) 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS

BUZ351

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor = ObE D BUZ351 ^ ^ _ 3 • bki53ci31 0D147tt May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB