TA17434 Search Results

Contextual Info: IRFP350 Data Sheet Title FP3 bt A, 0V, 00 m, 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFP350 S e m iconductor July 1999 Data Sheet 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET • 16A ,400V Ordering Information IRFP350 TO-247 • r DS ON = 0.300i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFP350

Abstract: TB334
Contextual Info: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: RFH12N35, RFH12N40 S em iconductor October 1998 Data Sheet 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs File Number 1630.2 Features • 12A, 350V and 400V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

irfp350

Abstract: IRFP350 harris harris IRFP350 irfp350/y06k
Contextual Info: IRFP350, IRFP351, IRFP352, IRFP353 S E M I C O N D U C T O R 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

MOSFET 400V

Abstract: TB334 400v 5a mosfet 400V switching transistor 400v mosfet Diode 400V 5A n-Channel mosfet 400v power relay N-channel mosfet BUZ35 BUZ351
Contextual Info: BUZ351 Semiconductor Data Sheet 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2266.1 Features • 11.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ35 field effect transistor designed for applications such as

AN7254

Abstract: RFH12N35 RFH12N40 TB334
Contextual Info: RFH12N35, RFH12N40 Data Sheet October 1998 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: IRFP350, IRFP351, IRFP352, IRFP353 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: tyvvys S RFM12N35, RFM12N40 Semiconductor y 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

AN7254

Abstract: RFM12N35 RFM12N40
Contextual Info: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,

irfp350

Abstract: IRFP350 harris IRFP351
Contextual Info: h a r r is IRFP350, IRFP351, IRFP352, IRFP353 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFP350

Abstract: TB334
Contextual Info: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,