RFM12 Search Results

Contextual Info: RFM12B RFM12B Universal ISM Band FSK Transceiver RFM12B DESCRIPTION Hoperf’ RFM12B is a single chip, low power, multi-channel FSK transceiver designed for use in applications requiring FCC or ETSI conformance for unlicensed use in the 433, 868 and 915 MHz bands.

12n08

Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
Contextual Info: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

f12n10l

Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
Contextual Info: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits

tx rx module 315mhz

Abstract: tx rx 315mhz RFM12 RFM12 B Rx module 315mhz 869MHZ 315MHZ 434MHZ tx module 315mhz SW-200
Contextual Info: RFM12 Demo RFM12 Demo Kit User Manual HOPE MICROELECTRONICS CO.,LTD Rm B.8/F LiJingGe Emperor Regency 6012 ShenNan Rd., Shenzhen,China Tel: 86-755-82973805 Fax: 86-755-82973550 Email: sales@hoperf.com trade@hoperf.com Website: http://www.hoperf.com http://hoperf.en.alibaba.com

433mhz rx tx module

Abstract: RFM12B-433S2P RFM12B-433S1P RFM12B RFM12B-433S2 RFM12B-868D RFM12B-433DP RFM12B-433-S1 rfm12b868s1 rfm12b-433s1
Contextual Info: RFM12B Datasheet REV2.0 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12B （the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12B data sheets） RFM12B

RFM12-433-D

Abstract: tx rx module 315mhz RFM12 CRYSTAL 433 315 mhz crystal Rx module 315mhz RFM12-868-S1 433Mhz crystal oscillator RFM124 45KHZ
Contextual Info: RFM12 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12 （the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12 data sheets） RFM12 General Introduction

f12n10l

Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
Contextual Info: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L

Contextual Info: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

RFM12U7X

Contextual Info: RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

RFP12N08

Abstract: TA9284 RFM12N08 RFM12N10 RFP12N10
Contextual Info: 3 8 7 5 0 8 1 G E S O L I D S T A T E 01 Standard Power M O S F E T s_ _ DE ,| 3Ô 7 S Ü Û 1 DOlfllSB 1 | _ RFM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode

12W55

Abstract: RFM12U7X 2-5N1A
Contextual Info: RFM12U7X 東芝電界効果トランジスタ シリコンNチャネルMOS形 RFM12U7X ○ VHF/UHF 帯電力増幅用 単位: mm ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET RFM 12U7X RFM12U7X Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds V, 6.0V, 4.8 Vds = 4.8V, 4.8V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~

Contextual Info: RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

RFP12N20

Abstract: RFP12N18 RFM12N18 RFM12N20
Contextual Info: ^01 DE I 3fl7SGfll OOiaiiS? =1 3875081 G E S O L I D S T A T E 01E 18157 D Standard Power MOSFETs-:- - RFM12N18, RFM12N20, RFP12N18, RFP12N20 File N u m b e r

RFM12N40

Abstract: RFM12 B RFM12N35
Contextual Info: Standard Power MOSFETs — RFM12N35, RFM12N40 File Number 1787 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 350 V - 4 0 0 V N-CHANNEL ENHANCEMENT MODE rDs on = 0 .5 O Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

Contextual Info: RFM12 Demo RFM12 Demo Kit User Manual HOPE MICROELECTRONICS CO.,LTD Add: 4/F, Block B3, East Industrial Area, Huaqiaocheng, Shenzhen, Guangdong, China Tel: 86-755-82973805 Fax: 86-755-82973550 Email: sales@hoperf.com trade@hoperf.com Website: http://www.hoperf.com

RFM12B-433D

Abstract: PCB Antenna matching RF12B 433mhz rx tx module RFM12B rfm12b-868 RFM12B-868S1 433mhz remote control transmitter and receiver rfm12b868s1 pll 40 MHZ remote control transmitter
Contextual Info: RFM12B UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12B （the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12B data sheets） RFM12B General Introduction

RFM12BP

Abstract: 433mhz 500mw RFM12BP-868 868Mhz FSK 500mW 433mhz rx tx module 433MHZ amplifier 500mw RFM12BP-433 433 to 450 mhz amplifier module RFM12B RF12B
Contextual Info: RFM12BP Datasheet REV2.3 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE WITH 500mW OUTPUT POWER RFM12BP （the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12B datasheet）

Contextual Info: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: tyvvys S RFM12N35, RFM12N40 Semiconductor y 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

AN7254

Abstract: RFM12N35 RFM12N40
Contextual Info: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,

f12N08L

Abstract: 12N08L FP12N10L 2n10l 12N10L rfm12 ic 572H
Contextual Info: RFM12 N08L/1OL R FP 12N 08L/10L HARRIS N-Channel Logic Level Power Field-Effect Transistors L^FET August 1991 Package Features TO-204AA BOTTOM VIEW • 12A, 8 0 V and 100V • r D S (O N ) = 0 . 2 f l SOURCE ^ • Design O p tim ized for 5V G ate Drives

Contextual Info: RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

RFP12N18

Abstract: RFP12N20 RFP12M20 RFP mosfets RFM12N18 RFM12N20
Contextual Info: Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 F ile N u m b e r 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V rDs on : 0.25 n Features: • SOA is power-dissipation lim ited • Nanosecond sw itching speeds