TA09293 Search Results

Contextual Info: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

RFP12N18

Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
Contextual Info: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20