TO205 Search Results

ta9192

Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15
Contextual Info: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,

NOTE11

Abstract: 0546 fL
Contextual Info: H-1381 H-1375 TO-39/TO-5 with Flange JEDEC TO-39/TO205 MD : H-1 5 3 9 t I H-1 6 4 2 r TO-5 with Heat Spreader M H-1468 7 : j - TO-39/TO-5 with Heat Radiator "Plastic TO-5 11 imensional Outlines TO-66WITH HEAT RADIATOR MEASURED AT BOTTOM TO-66/TO-213MA SEATING

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

TO3 HEATSINK

Abstract: ME 1117
Contextual Info: H-1381 H-1375 TO-39/TO-5 with Flange JEDEC TO-39/TO205 MD : H-1 5 3 9 t I H-1 6 4 2 r TO-5 with Heat Spreader M H-1468 7 : j - TO-39/TO-5 with Heat Radiator "Plastic TO-5 11 imensional Outline MOD. TO-1 2-LEAD MIN. MAX MIN MAX. 0 061 0081 1.55 A — 0.410

AN7254

Abstract: AN7260 RFL1N12L RFL1N15L
Contextual Info: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,

2N 3495

Abstract: 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PINT TRANSISTOR TO-5/TO205AD/TO-39 PACKAG E D E V IC E T Y PE VcEO sus VOLTS Ic (m ax) AM PS TO -5 T O 205A D 2N 1132A 40 0.6 2N 2800 35 2N 2904 i T O -39 fn ^FE @ V V CE m in/m ax @ m A /V VcE(sat) @ I c/I b V @ m A /m A

2N4405

Abstract: 2N4890 2N4036 2N4929 2N4037 2N4404 2N4406 2N4407 2N4928 2N5022
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 IC/ V c e min/max @ mA/V @ Ic/IB V @ mA/mA c <p P MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405

2N3019A

Abstract: 2N3114 2N5682 2N1613A 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N2219A 2N3020 transistor 2n2270
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 TO-5 T0205A D hr iff ill Ic m ax A M PS 2N697 40h 0.8 40/120@ 150/10 2N1711 50h 1.0 2N 1613A 50h 2N1893 D E V IC E TY PE !/ ^ C E (sa t) @ If/Iß V @ m A/mA C<P P fx (M H z) 1.5@150/15

2N6782

Abstract: 2N67 TB334
Contextual Info: [ /Title 2N67 82 /Subject (3.5A, 100V, 0.600 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Fairchild Corporation, NChannel Power MOSFET, TO205AF ) /Creator () /DOCI NFO pdfmark 2N6782 Data Sheet December 2001 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

2n4929

Abstract: 2N4405
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V ceo sus VOLTS Ic (max) AMPS ^FE @ IC/ VcE min/max @ mA/V VcE(wt) @ I c/I b V @ mA/mA C(P P ij (MHz) 2N4036 65 1.0 40/140@l 50/10 0.65@150/15 30 60 2N4037 40 1.0 50/250@l 50/10 1.4@150/15

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 @ W VCE min/max @ mA/V @ L/I b V @ mA/mA C<^ P fT MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 T O -5 TO 205A D t ri T O -3 9 20 @ W ^C m in /m a x D E V IC E su s Ic (m a x ) TYPE VOLTS AM PS @ m A /V 2N 697 40h 0 .8 4 1 0 /1 2 0 @ 150/10 2N 1711 50h 1.0 2N 1613 50h 2N 1893

2N3421

Abstract: 2N3419 2N3420 1000C 2N3418 2N3418S 2N3419S 2N3420S
Contextual Info: TECHNICAL DATA 2N3418, S, JAN, TX, TXV 2N3419, S, JAN, TX, TXV 2N3420, S, JAN, TX, TXV 2N3421, S, JAN, TX, TXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/393 NPN SILICON MEDIUM-POWER TRANSISTOR 2N3418, 2N3419, 2N3420, 2N3421 TO- 5 MAXIMUM RATINGS Ratings

2N3868

Abstract: 2N3867S 2N3867 2N3868S JTX 2N3867 2N3868S JAN
Contextual Info: TECHNICAL DATA 2N3867 JAN, JTX, JTXV 2N3867S JAN, JTX, JTXV 2N3868 JAN, JTX, JTXV 2N3868S JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/350 PNP SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

VP0300M

Abstract: VP0300L VP0300B-2 VP0300B VP0300
Contextual Info: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE

2N6660

Abstract: s0437 2N6660 siliconix VQ1004J
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

VN0808M

Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
Contextual Info: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 • VN0808M Single TO-220SD • VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP

vn0300m

Contextual Info: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B

VP2410

Abstract: vP2410B
Contextual Info: SILICONIX INC 1ÔE D 0254735 0014127 1 CY'Siliconix VP2410 SE R IE S JLJm in c o rp o ra te d P-Channel Enhancem ent-M ode M O S Transistors PRODUCT SUMMARY PART NUMBER TO-92 V BR DSS fDS(ON) (Í1 ) (V) Id (A) PAC KA G E VP2410L -2 4 0 10 -0.18 TO-92 VP241QB

40128

Contextual Info: SILICONIX INC IflE D • ÖS54735 0014110 b VN4012 SERIES JLfTZ'Siliccsnix M in c o r p o r a te d N-Channel E n h a n ce m e n t-M o d e MOS T ra n sisto rs T -'27-23 PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS rDS(ON) ( il) (V) Id (A) PACKAGE VN4012L 400

Contextual Info: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)