VP2410 Search Results

VP2410

Abstract: vP2410B
Contextual Info: SILICONIX INC 1ÔE D 0254735 0014127 1 CY'Siliconix VP2410 SE R IE S JLJm in c o rp o ra te d P-Channel Enhancem ent-M ode M O S Transistors PRODUCT SUMMARY PART NUMBER TO-92 V BR DSS fDS(ON) (Í1 ) (V) Id (A) PAC KA G E VP2410L -2 4 0 10 -0.18 TO-92 VP241QB

0427

Abstract: 2410L VP2410L MMA6
Contextual Info: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

2410L

Abstract: VP2410L
Contextual Info: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

VP2410L

Contextual Info: VP2410L P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

VP2410

Abstract: VP2410L marking LD VISHAY
Contextual Info: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -2 4 0 fDSIon) Max (Q) VGs<.h)(V) Id (A) 10 e V q s = - 4 .5 V -0 .8 to -2 .5 -0 .1 8 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • High-Side Switching

VP2410L

Contextual Info: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

B0815

Abstract: vp2410
Contextual Info: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits

Contextual Info: T e m ic VP2410L Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number VP2410L V BR DSS Mi» (V) -240 Features • • • • • High-Side Switching Secondary Breakdow n Free: —255 V Low On-Resistance: 8 CÏ Low-Power/Voltage Driven

VP2410

Contextual Info: VPDV24 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS208 TP2410L, TP2010L VP2410L Single Chip • Available as VPDV2CHP SÖ.xd DEVICE TYPICAL CHARACTERISTICS O u tp u t C h a ra cte ristics fo r Low G a te Drive (m A) -2 -3

VP2410L

Contextual Info: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

VP2410

Contextual Info: VP2410L P-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS "W >D (A) -240 10 -0.18 Performance Curves: VPDV24 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 ,l— I—-i 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

11105 IC

Contextual Info: Tem ic VP2410L S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) IDS«,) Max (Q) V GS<lh) (V) I d (A) -2 4 0 10 @ V o s = - 4 .5 V -0 .8 t o -2 .5 -0 .1 8 Features Benefits Applications • • •

5262

Abstract: VP2410L
Contextual Info: VP2410L Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L -240 10 @ VGS = -4.5 V -0.8 to -2.5 -0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

Contextual Info: VP2410L Vishay Siliconix P-Channel 240-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

One-chip telephone IC

Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
Contextual Info: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

VP2410

Contextual Info: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

FET package TO-71

Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
Contextual Info: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

N-Channel JFET FETs

Abstract: T072
Contextual Info: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2