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TA919 Datasheets (7)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TA9192A		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	119.46KB	1
TA9192B		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	119.46KB	1
TA9193		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	119.46KB	1
TA9193		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	80.43KB	1
TA9195A		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	80.43KB	1
TA9195B		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	119.46KB	1
TA9195B		Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	80.43KB	1

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KEMET Corporation


KEMET Corporation C315C334K5R5TA9192 - Bulk (Alt: C315C334K5R5TA9192)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	C315C334K5R5TA9192	Bulk		43 Weeks	500	1 - 10 - 100 - 1000 $0.17 10000 $0.15	Buy Now

TA919 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ta9192 Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15 Contextual Info: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,	Original	o205af rfl4n12 rfl4n15 25bvdss +4an7254 an7260 ta9192 ta919	PDF
ta9192 Contextual Info: W vys S RFL4N12, RFL4N15 Semiconductor y 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	rfl4n12 rfl4n15 ta9192 an7254 +1an7260	PDF
3N45 Abstract: 35165 TA9193 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TA9232 rca application notes 35169 Contextual Info: Standard Power M O S F E T s _ File Number 1384 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors 3 A, 450 and 500 V rDs on : 3 0 Features: • SOA is p o w e r-d is s ip a tio n lim ite d	OCR Scan	rfm3n45 rfm3n50 rfp3n45 rfp3n50 +892cs-3374i 92cs-35i66r1 3n45 35165 ta9193 ta9232 rca application notes 35169	PDF
ta9230 Abstract: RFM15N12 RFM15N15 RFP15N12 RFP15N15 ta9195 Contextual Info: Standard Power MOSFETs RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m be r 1443 N-Channel Enhancement-Mode Power Field-Effect Transistors 15 A, 120 V — 150 V rDs on : 0.15 fi Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds	OCR Scan	rfm15n12 rfm15n15 rfp15n12 rfp15n15 +2ta9230 ta9195	PDF
M339 Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15 Contextual Info: □1 DE I 3fl7SDfll DDlflim S \| ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi	OCR Scan	3fl75dfll rfm10n12 rfm10n15 rfp10n12 +5rfp10n15 switchin5081 m339 transistor m339 ta9192	PDF
5Q07 Abstract: RFP mosfets RFL1N12 RFL1N15 RFP2N12 RFP2N15 rfp1n12 ta9196 TA921 Contextual Info: Standard Power MOSFETs RFL1N12, RFL1N15, RFP2N12, RFP2N15 File N um ber 1444 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 Amperes 120 V — 150 V ro s o n : 1.75fi and 1.90 Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds	OCR Scan	rfl1n12 rfl1n15 rfp2n12 rfp2n15 +7an-7254 an-7260 5q07 rfp mosfets rfp1n12 ta9196 ta921	PDF
RFM3N45 Abstract: RFM3N50 RFP3N45 RFP3N50 TA9193 TA9232 92CS-3316Z Contextual Info: 3 8 7 5 0 8 1 G E S O L I D Standard Power MOSFETs S T A T E ^ 3 2 , D e I b ü T S G Ö 0 0 1 0 1 1 7 I fl I ” ' T~ V RFM3N45, RFM3N50, RFP3N45, RFP3N50 File N u m b e r 1384 Power M O S Field-Effect Transistors	OCR Scan	rfm3n45 rfm3n50 rfp3n45 rfp3n50 +592cs-35165 92cs-15i68r1 ta9193 ta9232 92cs-3316z	PDF
RFM6N45 Abstract: RFM6N50 RFP6N45 RFP6N50 Contextual Info: Hi 3875081 G E SOLID 3fl7SGfll DOIAIS^ 4 T STATE Standard Power MOSFETs 01E 18129 D r-3 ? -// -_ •39-/3 RFM6N45.RFM6N50, RFP6N45, RFP6N50 File N u m b e r 1494 Power MOS Field-Effect Transistors TERMINAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	rfm6n45 -rfm6n50 rfp6n45 rfp6n50 +1rfm6n50	PDF
2N15 Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12 Contextual Info: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode	OCR Scan	d7z39 rfl1n12 rfl1n15 rfp2n12 +4rfp2n15 2n15 rfp-zn rfp1n12	PDF
ta9192 Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15 Contextual Info: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s	OCR Scan	rfm10n12 rfm10n15 rfp10n12 rfp10n15 +1ta9192	PDF
10n12 Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12 Contextual Info: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V	OCR Scan	rfm10n12 rfm10n15 rfp10n15 rfp10n12 +8rfp10m12 10n12 92cs-3780i ta9192 rfm1 rfp mosfets ta9212 a9212	PDF
RFP15N12 Abstract: RFP15N15 92CS-39526 RFM15N12 RFM15N15 TA9230 92CS-34019 Contextual Info: 01 3 8 75 0 8 1 G E SOLID De 3 f l7 50 ûl STATE Standard Pow er M O S F E T s 0 1E GD1Û173 18173 7 Di T ~ 3 ? - l RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m b e r 1443 N-Channel Enhancement-Mode	OCR Scan	rfm15n12 rfm15n15 rfp15n12 rfp15n15 +592cs-34923 92cs-34824 92cs-39526 ta9230 92cs-34019	PDF