dv4 mosfets
Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its
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an7254rfm10n15rfm10n15ldv4 mosfets+8c12 ic gateca3240edepletion mosfetharris semiconductor jfetmos diemosfet cross referencen channel depletion mosfet2n4036
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F10N12L
Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Contextual Info: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)
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rfm10n12lrfm10n15lrfp10n12lrfp10n15l+792cs-3374if10n12lf10n15l10n15lf10n12f10n1510n15
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M339
Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15
Contextual Info: □1 DE I 3fl7SDfll DDlflim S | ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi
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3fl75dfllrfm10n12rfm10n15rfp10n12+5rfp10n15switchin5081m339transistor m339ta9192
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F10N15L
Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
Contextual Info: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level
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3fl75dfilrfm10n12lrfm10n15lrfp10n12l+7rfp10n15lf10n15lf10n12lrca solid state f10n12lf10n12f10n15ta9530
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TB334
Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
Contextual Info: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such
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rfm10n12rfm10n15rfp10n12rfp10n15+5ta09192t0-204aatb334an7254tb-334
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ta9192
Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15
Contextual Info: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s
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rfm10n12rfm10n15rfp10n12rfp10n15+1ta9192
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10n12
Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12
Contextual Info: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V
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rfm10n12rfm10n15rfp10n15rfp10n12+8rfp10m1210n1292cs-3780ita9192rfm1rfp mosfetsta9212a9212
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RFL10N15
Abstract: 330 e57
Contextual Info: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni
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0n15dmii-std-750rfm10n15rfp10n15+6rfl10n15pcf10n15wpcf10n15d122x1221-800-4-harris330 e57
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buz11
Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12
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t0-204o-205o-218o-220+15rfm15n05rfm25n05rfk45n05rfl2n05rfh45n05rfp4n05buz11buz31thomson distributor 58e drfk30n12thomson 58ethomson distributorbuz71buz71arfh12n
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324irf722pirf732psgsp3055irf730p1rfp450irf510sgsp312irf540fiirf522pmtp20n10
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10N15L
Abstract: P10N15L RFP10N12L
Contextual Info: R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L gì h a r r is N - C h a n n e l L o g ic Level P o w e r F ie l d - E f f e c t T r a n s is to r s L 2 F ET August 1991 Package F e a tu re s T O -2 0 4 A A • 10A, 120V and 150V BOTTOM VIEW • rDS(0N) = 0 .3 fl
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fp10n12lan7254an-726092cs-3bi64+310n15lp10n15lrfp10n12l
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4311 mosfet transistor
Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760
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2n67552n67562n67572n6758+162n67592n67602n67612n67622n67632n67644311 mosfet transistord 4206 transistortransistor d 322power mosfetsd 843 transistortransistor irf230h a 431 transistormosfet irf460n-channel 4336742r
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324tp8n10th15n20th7n50tp4n10tp10n05irfp350fitp5n35tp5n40tp4n45tp3n40
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POWER MOSFET APPLICATION NOTE
Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching
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100nmpower mosfet application noterfm10n152n4036+7an7254ca3240eca3280rfm10n15lrfm15n15vertical jfethigh power pulse generator with mosfet
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10N15
Abstract: 10N12 rfm10n rfp10n12
Contextual Info: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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rfm10n12/10n15rfp10n12/10n15t0-204aarfm10n12+8rfm10n15rfp10n12rfp10n15an-7254an-726010n1510n12rfm10n
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RFM1
Abstract: L92C
Contextual Info: HARIRIS R FM 10N 12/10N 15 RFP10N12/1 ON 15 N-Channel Enhancement Mode Power Field Effect Transistors A u g u st 1991 Packages Features • TO-204AA 10A, 1 2 0V and 1 5 0V • rD S on = 0 .3 ÎÏ • S O A is P ow er-D issip atlo n Lim ited • N anosecond S w itching S peeds
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12/10nrfp10n12/1o-204aarfm10n12+5rfm10n15rfp10n12rfp10n15rfm1l92c
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719
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2N6901
Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
Contextual Info: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*
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0g0s713o-204o-205o-220+14o-251o-252o-247rfl2n05lrfm15n05lrfp4n05l2n69012n6903thomson distributorrfl1n10l2n6902rfd14n05lsmrfd16n05lrfp14n05l
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100 amp 1000 volt GTO
Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard
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100nm100 amp 1000 volt gtoan-7501ca3280+7vertical jfetp channel depletion mosfet2n4036an75ca3240erfm10n15rfm10n15l
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F12N10L
Abstract: f12N08L f12n08 f12n10 RFM12N08L RFP12N10L RFM10N12L RFM10N15L RFM12N10L RFP10N12L
Contextual Info: h a r r R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L i s N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features TO-204AA BOTTOM VIEW • 10A, 120V and 150V • fDS(ON) = O-3« □RAIN (FLANGE) SOURCE • Design Optimized for 5V Gate Drives
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rfm10n12l/15lrfp10n12l/15lrfm10n12lrfm10n15l+10rfp10n12lrfp10n15lrfm12n08lrfm12n10lrfp12n08lrfp12n10lf12n10lf12n08lf12n08f12n10
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40
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10N15L
Contextual Info: 4302271 QDS 4 7 5 5 T4 1 • HAS R FM 10 N 12L /15L R FP10N 12L /15L H a r r is N-Channel Logic Level Power Field-Effect Transistors L^FET August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • 10A, 120V and 150V • rDS(ON) = 0-3H SOURCE f • Design Optimized for 5V Gate Drives
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fp10nrfm10n12lrfm10n15lrfp10n12l+510n12l10n15lrfp10n15l92cs-376s4an7254
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