rfkt
Abstract: 35N08 rfk35n RFK35N10 RFK35N08
Contextual Info: • 4 3 02 27 1 0G 5 4 4 3 4 574 ■ RFK35N08 HAS ¡2 H a r r is RFK35N10 N-Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -2 0 4 A E • 35A, 80V and 100V TOP VIEW • rDS on = 0 .0 5 5 ÎÏ ■ SOA is Power-Dissipation Limited
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rfk35n08rfk35n108cs-37i74-57it+3rfkt35n08rfk35n
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m 9625
Abstract: RFK35N08 RFK35N10
Contextual Info: DÏ 3875081 G È DËJ 3ö75Qäl SOLID STATE Standard Power MOSFETs □□lflEDS S “ 01E _ _ 18205 RFK35N08, RFK35N10 D T S Ì- IS File Number 1499 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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rfk35n08rfk35n102cs17w792c5-37i73+5pmp411acs-s7i7492cs-37i7592cs-m 9625
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Contextual Info: , One. J.EIIE.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 RFK35N08, RFK35N10 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE
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rfk35n08rfk35n10-100vlso-17+200a///srfk35nob
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RFK35N08
Abstract: RFK35N10 m 9625 T0204AE
Contextual Info: DÏ 3875081 G È DËJ 3ö75Qäl SOLID STATE Standard Power MOSFETs □□lflEDS S “ 01E _ _ 18205 RFK35N08, RFK35N10 D T S Ì- IS File Number 1499 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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rfk35n08rfk35n10t-39-1392cs-37167r2+492cs-37t6892cs-m 9625t0204ae
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RFK35N10
Abstract: RFK35N08
Contextual Info: Standard Power MOSFETs RFK35N08, RFK35N10 File N um ber 1499 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L EN HAN C EM EN T MODE 35 A, 80 V - 100 V rDs on = 0.055 O Features: • SO/4 is pow er-dissipation lim ited
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rfk35n08rfk35n10cs-33741an-7254+2an-726092cs-57i75
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buz11
Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12
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t0-204o-205o-218o-220+15rfm15n05rfm25n05rfk45n05rfl2n05rfh45n05rfp4n05buz11buz31thomson distributor 58e drfk30n12thomson 58ethomson distributorbuz71buz71arfh12n
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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DF378F
Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E
Contextual Info: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum
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pcf35n08source-10-milnumber-09288pcf35n08-+11rfk35n08rfk35n10nr231adf103bdf378fnrj31aft03ei36sba nuts0166 415 04 1 060hall 01e
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92CS-J7I7J
Abstract: 35N10 R 4727 RFK35N10 RFK35N08
Contextual Info: 2 H a r r is R F K 3 5 N 0 8 R F K 3 5 N 1 0 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1991 Features Package T0-204 AE • 35A , 8 0 V and 100V TOP VIEW • ro s o n ) = 0 .0 5 5 0 y • S O A is P ow er-D issip atio n Lim ited
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t0-204rfk35n0892cs-j7i7j35n10+2r 4727rfk35n10
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324irf722pirf732psgsp3055irf730p1rfp450irf510sgsp312irf540fiirf522pmtp20n10
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4311 mosfet transistor
Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760
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2n67552n67562n67572n6758+162n67592n67602n67612n67622n67632n67644311 mosfet transistord 4206 transistortransistor d 322power mosfetsd 843 transistortransistor irf230h a 431 transistormosfet irf460n-channel 4336742r
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324tp8n10th15n20th7n50tp4n10tp10n05irfp350fitp5n35tp5n40tp4n45tp3n40
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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t0-204aat0-204aet0-220abt0-220ac+10cross reference power mosfetirf 3502 mosfetsd500kdirf3203mosfet irf equivalent booksem 2106 inverter diagramifr822diode byw 56buz41 equivalenttransistor f630
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PCF35N08
Abstract: RFK35N08 RFK35N10
Contextual Info: 3875081 G E SOLID STATE -01 DE 1 • 3fl75Dfll GDiaSDa ¡i I T-ZI'OI Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum
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pcf35n08source-10-milnumber-09288pcf35n08-+2rfk35n08rfk35n10
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719
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