T0204AE Search Results

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

IXGH17N100

Contextual Info: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi

RFK30N12

Abstract: RFK30N15
Contextual Info: Standard Power MOSFETs RFK30N12, RFK30N15 File Number 1455 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 30 A, 120 V - 150 V ros on =0.075 Q Features: • SO A is power-dissipation lim ited

1RFZ44

Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
Contextual Info: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

2N6155

Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS

SOT-123

Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Contextual Info: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0

IRF140R

Abstract: IRF141R IRF142R IRF143R
Contextual Info: .Rugged Power MOSFETs File Number 2001 IRF140R, IRF141R IRF142R, IRF143R Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0.085fl and 0.110 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited

61CMQ050

Abstract: 61-CMQ-050 120CNQ045 66PQ040 60CMQ050 60HQ100 60cmq 120CNQ030 130CNQ030 61-cmq
Contextual Info: I N T E RNfATIONAL H E RECTIFIER D I 4a 55452 ooiaoas1 i | Schottky Rectifiers 60 T O 160 A M P S Part Number ' f a v TC VR W M (A) <°C) 120 120 - fR M @ VFM ® Ti = 125SC& 'fm Rated V,RW M (mA) (A) Max. Tj Case Style <°C) 175 175 175 175 175 T0-204AE

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5

irf411

Abstract: IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430
Contextual Info: - 252 - Mi X m % *± « * % Vd s or Vdg V £ Vg s Pd Id * /CH (V) 11 fé (Ta= 25 tJ) (A) Vg s th) I d ss I g ss * /CH <W) min (nA) Vg s (V) (u A ) Vd s (V) (V) Id («A ) fó f Ds(on) Vrs= Vg s max (V) % te (Ta=25cO ) I d ( on) C i ss g fs Coss C rss % &

1XYS

Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR

BUT35

Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Contextual Info: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS

Contextual Info: PD - 91392C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for

TA9229

Abstract: rca 9228 d TA9228 rca9229d RCA-9229 RCA9228D
Contextual Info: 3875081 G E SOLID STATE 01E 17323 D Darlington Power Transistors F ile N u m b e r 1448 RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A Complementary High Current,

GaN 20A

Contextual Info: D64DV5,6,7 D64EV5,6,7 File Number 2361 50-Ampere N-P-N Darlington Power T ransistors TERMINAL DESIGNATIONS c FLANGE Features: • High speed t$ < 5.0 /jsec., tr < 3.0 Aisec. ■ High voltage: 400-500 Vq ^q POWER TRANSISTORS ■ High gain: 50 minimum @ 50 amperes, I q

s0241

Abstract: su-241 60CDQ SD241 40CDQ s0241 c 40CDQ045 60CDQ045 rectifier to3
Contextual Info: IN TE RNATIONAL RECTIFIER 4855452 SS INTERNATIONAL RECTIFIER . d F | 4 ö S S 4 S E GDOSCH? 7 ~ f ~ Data Sheet No. PD-2.058B 55C 0 5 0 9 7 INTERNATIONAL RECTIFIER I R r- * 3-0 f 40CDQ Gl60CDQ SERIES AND SDS41 4 0 and 60 Amp Dual Schottky Center Tap Rectifiers

60HQ100

Abstract: JANTX1N6392
Contextual Info: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8

circuits of IRF150

Abstract: IRF150-152
Contextual Info: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*

transistor 9721

Abstract: 9721 mosfet to3
Contextual Info: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRH250

Abstract: TO-254AA Package IRHF130 IRHF230 hexfets IRHM450 IRHM150 IRHG110
Contextual Info: RADIATION HARD HEXFETs — INTERNATIONAL RECTIFIER 2bE INTERNATIONAL RECTIFIER IT O R D 4ÔSS4S2 GOlDSbö 1 T-3Ì-Ò3 • RADIATION HARD HEXFETS N-CHANNEL Types Vos V 1q com R d s io n max) TC - 25°C 'dm pulsed Pd max n A A W Bulletin Case Style SMD-1

N73M

Contextual Info: N-Channel Power MOSFETs National Semiconductor COOLFETs TM GO m 3: M o >D A °9 (nC) Max C|W (pF) Min Max Com (pF) M in Max C|*a (PF) Min Max 0.24 8 120 3000 600 200 F3 0.25 0^4 8 120 3000 600 200 F3 4 0.25 0.24 8 120 3000 600 200 F3 2 4 0.25 0.32 7 120

IXYS CS 2-12

Contextual Info: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD