IRH9250 Search Results

Contextual Info: PD - 91392C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for

Contextual Info: PD - 91392B RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A TO-204AE

sec1012

Abstract: IRH9250
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1392 IRH9250 AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.315Ω Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

p-channel power mosfet 14A

Abstract: IRH9250 IRH93250 ed 89a ED 89A diode
Contextual Info: PD - 91392A IRH9250 IRH93250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -200 Volt, 0.315Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: PD-91392D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH9250 IRH93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω ID -14A -14A International Rectifier’s RADHard HEXFET ®

sec1012

Abstract: p-channel power mosfet 14A IRH9250 P-Channel HEXFET Power MOSFET
Contextual Info: Provisional Data Sheet No. PD-9.1392 IRH9250 AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.315Ω Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRH9250

Abstract: IRH93250 T0204AE
Contextual Info: PD - 91392C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

Contextual Info: International l ü Rectifier Provisional Data Sheet No. PD-9.1392 AVALANCHE ENERGY AND dv/dt RATED IR H 9 2 5 0 HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.315Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _