B3B75S4 Search Results

BUT35

Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Contextual Info: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS

BC 939 Transistor Data

Abstract: MJ4647 MJ4646
Contextual Info: MOTOROLA S C XSTRS/R F 12E 0 I b3b75S4 MOTOROLA 0004103 I T*+J7 MJ4646 MI4647 SEMICONDUCTOR TECHNICAL DATA 1.0 AM PERE POWER TRANSISTORS PNP SILICON 200-300-400 VOLTS 5 WATTS PNP SILICO N POWER TRANSISTORS . . . designed for high-voltage amplifier and saturated switching appli­

21134 transistor

Abstract: RF1029 21134 case 244c-01 21134 npn RF NPN POWER TRANSISTOR 3 GHZ 5w
Contextual Info: MOTOROLA SC XSTRS/R F 4bE MOTOROLA •I D ■ b3b75S4 O D 'îSIS b _ SEMICONDUCTOR 7 HNOTb 7 ^3 3 ' 0 5 TECHNICAL DATA The RF Line UHF P o w e r T ran sisto r . . . d e sig n e d p rim a rily fo r w id e b a n d , la rg e -sig n a l o u tp u t a n d d riv e r a m p lifie r stages to

MM2896

Abstract: To206AF bo140
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications

2204B

Abstract: 1 WATT carbon RESISTOR MRF433 vk200 1N4001 vk200 rf choke K1004
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b75S4 OCHMbbS b MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 12.5 W (PEP)- 3 0 MHz S IL IC O N R F POW ER T R A N S IS T O R S RF POWER TRANSISTOR . . . designed prim arily for application as com plem entary sym m etry

Contextual Info: MOTOROLA SC XSTRS/R F 2bE D • b3b75S4 00^0533 MOTOROLA SEMICONDUCTOR a » " " « ™ ™ " " » " Ö ■ "T-V7 - ( S TECHNICAL DATA PRELIMINARY DATA DM0 mini MRH660PHXV, MRH660PHS PR O C ESSED TO MIL-S-19500 RADIATION TOLERANT TRANSISTOR Discrete Military

CA2850

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b75S4 0000543 1 | *F7i4-Ocl- MOTOROLA SEMICONDUCTOR TECHNICAL DATA CA2850R CA235QRH CA2851R The RF Line W id e b a n d L in e a r A m p lifie rs . . . d e s ig n e d fo r a m p lifie r a p p lic a tio n s in 50 to 100 oh m sy s te m s re q u irin g w id e

2N4406

Abstract: transistor c 3206 2N4407
Contextual Info: M O T O R O L A SC XSTRS/R F 12E D I b3b75S4 GQflbMl? fl | T- 31-/7 2N4406 2N4407 M A X I M U M R A T IN G S Symbol Value Unît Collector-Emitter Voltage VcEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Rating Ve b o 5.0 Vdc 'Collector Current — Continuous*

Contextual Info: ÎF|b3b75S4 MOTOROLA SC ÎXSTRS/R F> r 6367254 MOTOROLA SC XSTRS/.R 96D F . 81951, _ M A X I M U M R A T IN G S Value U n it VcEO 32 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage Ve b o 5.0 Vdc 'c 800 m Adc S ym bol M ax U n it Pd 225 mW 1.8

sot23 transistor marking y2

Abstract: 2N3905 MOTOROLA ts 3110 TRANSISTOR T29 marking X062 MMBT3906-2A 25CC 2N3905 2N4123 2N4401
Contextual Info: MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA SC Tb !>F|b3b75S4 G O ñ E D m <X S T R S ¿ R „ F ? 9 6D 8 2 0 4 1 T'Z^'/S MAXIMUM RATINGS Rating Sym bol Value U nit Coilector-Em itter Voltage VCEO 40 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage

2N6370

Abstract: MRF-410A RF410A mrf410 vk200.10 MRF410A
Contextual Info: 12E D I b3b75S4 GGa7Ì.57 5 | MO TOROLA SC MOTOROLA XSTRS /R F T - 33 S E M IC O N D U C T O R TECHNICAL DATA M RF410 M RF410A The RF Line N P N S ilic o n RF P o w e r T ra n sisto rs 10 W -30 MHz RF POWER TRANSISTORS NPN SILICON . designed for high gain driver and output linear amplifier stages in 1.5 to 30 M Hz

MM4037

Abstract: MM4036 lg 14 ccb
Contextual Info: M OTOROLA SC XSTRS/R F 1EE D | b3b75S4 OGflbSTa 4 | T -$ *7 -¡*-¡ M A X IM U M R A T IN G S Rating SymboL Coliector-Emitter Voltage MM4036 MM4037 Collector-Base Voltage MM4036 MM4037 VCEO VCBO Emitter-Base Voltage Value Unit Vdc 65 40 Vdc 90 60 VE8 0 5.0

BSV16

Abstract: BSV17-10 LTNV 2N4405 BSV15-16 BAY63 BSV15 BSV15-10 BSV17 BSv15 MOTOROLA
Contextual Info: MO TO RO LA SC XSTR S/R F 1EE D I b3b75S4 QOfibMi? T r- 3 3-¿>r I BSV15-10, 46 thru MAXIMUM RATINGS Sym bol Coltector-Emitter Voltage VCEO Collector-Emitter Voltage VCES BSV 15 40 40 Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

MFQ6660C

Abstract: MFQ6660P
Contextual Info: MOTOROLA SC XSTRS/R F 1ZE 0 I b3b75S4 QUAD DUAL-IN-LINE N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS FIELD EFFECT TRANSISTORS □Qfit. 75c? 3 I T Æ -2 5 MFQ6660C; P These TMOS Power FETs are designed fo r high current, high speed power switching applications such as switching power supplies, CMOS logic,

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .

2n2501

Abstract: 2N2501 MOTOROLA Rbl 69
Contextual Info: MOTOROLA SC XSTRS/R F 15E I b3b7354 GGflt,2bD 1 I r-3r-/3 M A X I M U M R A T IN G S Symbol Value Unit Coliector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage Vc b o 40 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc Total Device Dissipation @ T>\ = 26°C Derate above 25°C

2N5109 motorola

Abstract: transistor 2N5109 c0851 2n5109
Contextual Info: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MTP50N05

Abstract: l0134 CU904 CASE221D-02
Contextual Info: MOTOROLA SC XSTRS/R 4bE F b3b7aS4 D 0 Ü T3 5 MS 7 IMOTb Order this data sheet by MTA30N05EUD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTA30N05EL Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate

2955E

Abstract: MTA2955E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM

H16S

Abstract: je210
Contextual Info: M OT O RO LA SC XSTRS/R 1EE F § b3fc.72S4 MOTOROLA ^ | MJ8502 MJ8503 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s O O flim ? D a ta . S h e e t S.0 A M P E R E NPN SILICON POWER TR AN SISTO RS SWITCHMODE SE R IE S NPN SILICO N POWER TRANSISTORS

NS 8002 1151

Abstract: TO-66 CASE
Contextual Info: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications

MD918AB

Contextual Info: MOTGRCLA SC 12E D I b3t,72SM DQ0tS13 XSTRS/R F MD918A MD918B M A X I M U M R A T IN G S Sym bol Value Unft Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCES 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Collector Current — Continuous 'c 50 mAdc

of 76952

Abstract: 76952 MRF transistor mrf 304 M/76952
Contextual Info: motorola sc ÛT -c x s t r s / r f > 6 3 6 7 2 5 4 MOTOROLA SC X S T R S / R F »F|ti3t.7aS4 QD7fiTSB 1 89D 76952 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M RF392 The RF Line N P N S ilic o n P u sh -P u ll RF P o w e r T ra n sisto r . designed primarily for wideband large-signal output and driver amplifier stages