2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239
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tp2304
Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12
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am1214-100am1214-200am1214-325am80912005+16am80912015am80912030am80912085am80912150am81214006am81214015tp2304tpv3100tp9383tp2330mrf2001pt9783pt9780tp8828fbly93amrf 406 application circuit
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2N50b
Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A
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bfw832sc9972n50b22sc3122+10bfw64nr421denr421dfbf260bf2612n50bbcy5b2sc307bdiode bonbcw60rd
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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MRF410
Abstract: MRF-410
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF410 The RF Line N P N S ilic o n RF P o w e r T ra n sisto r 2 10 W - 3 0 M H z . . . d e s ig n e d fo r h ig h g a in d r iv e r a n d o u tp u t lin e a r a m p lifie r s ta g e s in 1.5 to 30 M H z H F /S S B e q u ip m e n t.
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+72n5032n5160 motorolabf431bfr96hy 1906 transistorjo2015kd 2060 transistor
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TPV3100
Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE
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twf150-50fhf150-50shf250-50hf100-28+16hf220-28hf220-50tvu014hf75-50sasat25asi4003tpv3100tp3024ahf power amplifier tpv3100pt9783mrf466mrf4070tp9383tp2304mrf433mrf492a
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2N6370
Abstract: MRF-410A RF410A mrf410 vk200.10 MRF410A
Contextual Info: 12E D I b3b75S4 GGa7Ì.57 5 | MO TOROLA SC MOTOROLA XSTRS /R F T - 33 S E M IC O N D U C T O R TECHNICAL DATA M RF410 M RF410A The RF Line N P N S ilic o n RF P o w e r T ra n sisto rs 10 W -30 MHz RF POWER TRANSISTORS NPN SILICON . designed for high gain driver and output linear amplifier stages in 1.5 to 30 M Hz
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b3b75s4rf410rf410a2n6370+4mrf410mrf410amrf-410avk200.10
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