MD918A Search Results

610A04

Abstract: MQ918
Contextual Info: M O T O R O L A SC X S T R S / R F 4bE » fli b 3 b 7 2 S 4 0 G S 2 b n b «HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 PRELIMINARY DATA mini MMCM918HXV/HS (SINGLE) MD918FHXV/HS (DUAL) MD918AFHXV/HS (DUAL) MQ918HXV/HS (QUAD) Discrete Military Operation

MD918AB

Contextual Info: MOTGRCLA SC 12E D I b3t,72SM DQ0tS13 XSTRS/R F MD918A MD918B M A X I M U M R A T IN G S Sym bol Value Unft Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCES 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Collector Current — Continuous 'c 50 mAdc

MD918

Abstract: MD918A be21 MD918B jedec to-78 case md918 Transistor
Contextual Info: Dhta Sheet MD918 MD918A MD918B central ^ - - " sem iconductor Corp. NPN DUAL SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-78 CASE M anufacturers of W orld Class Discrete Semiconductors

Contextual Info: , L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MD918 MD918A MD918B NPN DUAL SILICON TRANSISTOR JEDEC TO-78 CASE MD918 Series types are Silicon NPN Planar Epitaxial Dual Transistors designed for dual amplifier applications.

Contextual Info: g MMCM918HXV/HS SINGLE MD918FHXV/HS (DUAL) MD918AFHXV/HS (DUAL) MQ918HXV/HS (QUAD) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 Surface Mountable Small-Signal Transistor 30 Volt, 50 Milliampere Bipolar NPN Silicon MAXIMUM RATINGS S ym bol

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N3563

Abstract: BF163 se5020 Fairchild 2N2857 fairchild to-106 2N3880 BF159 PE5025 2N5130 BF167
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont'd) Item DEVICE NO. PG @ f [GMA] (OSC POWER) dB Min MHz C0b @f MHz Pd ta 25°C mW 3.5 (Typ) 60 310 TO-106 0.8 (Typ) 3.0 (Typ) 40 310 TO-106 [C ce]

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

md918

Abstract: M559-01 md918 Transistor MD708B MD918A M559-02 MD708 M0708B MD708AF MD708F
Contextual Info: MOTOROLA SC - C X S TR S /R F> T b 6367254 MOTOROLA XSTRS/R SC DE^b3b?254 0002414 96D 8 2 4 1 4 F 4 D'T A 3 ~ ¿ b M A X IM U M RATINGS Symbol Value Unit VCEO 50 Vdc Collector-Base Voltage VCB 75 Vdc Emitter-Base Voltage veb 6.0 Vdc Rating Collector-Emitter Voltage

md918

Abstract: MD918A
Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA ^ SC »F|t.3b7ESM 96D 82 4 2 2 C X S T R S / R F _ T Sym bol Value Unit Coliector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage V CES 30 Vdc Emitter-Base Voltage Ve b o 3.0 Vdc 'c 50 mAdc Collector Current — Continuous

MD918

Abstract: MD918A K 1170 MD918F MD918B MD918BF
Contextual Info: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.

md5000a

Abstract: BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE110 IRFE111 IRFE113 IRFE9120
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued QUAD TMOS FETS rds (ON) Devices (£2) Max VGS (H7) @ ID (A) Min V(BR)DSS IDSS (V) @ VDS Max (V) ID (m A) @ VDS (V) (UA) Max (V) Min @ ID (VA) CISS IGSS (nA) Max @ VGS (V) CRSS ton toff (pf) Max @ VDS (V) (P0 Max

MJ1005

Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:

md918 Transistor

Abstract: germanium MM2264 2N3050 MC369G
Contextual Info: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

MD8003

Abstract: 2n3817 MD918A MD7003A MD8002 MD2219 MD2219A MD2219AF MD2219F MD2369
Contextual Info: D U A L T R A N S IS T O R S r ’S oo CL < < c 5 QC Subscript »0 PD Watts One Oie Only •c Amp Max. hFE 0.05 0.05 0.05 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.6 0.20 0.20 0.20 0.5 0.5 0.03 0.05 0.05 0.03 0.03 0.03 0.5 0.5 0.5 0.5 0.03 0.03 0.03 0.03 0.03

md7002

Contextual Info: LO 1 o O oi 1 1 S S > E ui ca > O 1O O •r1 ' ifj 1 « ? —ir UJ LU f O IO ! «£ E o o o o o T- o O O Max. MATCHING a I O O 8 1 1 00 1 I I i l ° n I I 00 00 00 CO 00 r - h . r*. i«s. h* Ó Ó Ó Ó Ó i— f— f— I— I— 00 CO CO CO 00 h - h- h-

Contextual Info: *, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MD918, A, B (SILICON) MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency