MD918F Search Results

610A04

Abstract: MQ918
Contextual Info: M O T O R O L A SC X S T R S / R F 4bE » fli b 3 b 7 2 S 4 0 G S 2 b n b «HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 PRELIMINARY DATA mini MMCM918HXV/HS (SINGLE) MD918FHXV/HS (DUAL) MD918AFHXV/HS (DUAL) MQ918HXV/HS (QUAD) Discrete Military Operation

MQ918

Abstract: MD918
Contextual Info: MOT OROL A SC XSTRS/R F 4bE b3b?SSM D QQR2fl72 7 «nO Tb ~ 7^¥3iZ S MOTOROLA SEMICONDUCTOR! TECHNICAL DATA h A ä MD918HX, HXV (DUAL) MD918FHXV (DUAL) MHQ918HX, HXV (QUAD) MMCM918HXV (SINGLE) MQ918HXV (QUAD) NPN Silicon Duai/Quad Small-Signal Transistors

MD918

Abstract: MD918A K 1170 MD918F MD918B MD918BF
Contextual Info: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.

MD916

Abstract: MD918 MQ918 MD918F MD918FHXV MD918HX MHQ918 MHQ918HX MQ918HXV
Contextual Info: MD918HX, HXV d u a l ; MD918FHXV (DUAL MHQ918HX, HXV (QUAD) MQ918HXV (QUAD) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma N.Y. 11779 NPN Silicon Dual/Quad Small-Signal Transistors designed for high-frequency amplifier applications. co M A X IM U M R A T IN G S

Contextual Info: *, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MD918, A, B (SILICON) MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency

Contextual Info: g MMCM918HXV/HS SINGLE MD918FHXV/HS (DUAL) MD918AFHXV/HS (DUAL) MQ918HXV/HS (QUAD) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 Surface Mountable Small-Signal Transistor 30 Volt, 50 Milliampere Bipolar NPN Silicon MAXIMUM RATINGS S ym bol

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

BC140 equivalent

Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF

UPA39A

Abstract: FET package TO-71 UPA38A 2N4043 2N4042 BC337 2N282 2SC1265 SOLITRON mp302
Contextual Info: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ie Max fT Po Max (A) (Hz) (W) 600m 600m 600m 200M 200M 200M 6.0M 200M 200M 200M 200M 200M 200M 80M 625m 400m 400m 500m 350m 500m 350m 800m 500m 625m 400m 400m 1.5 1.5 1.5 1.5

MRF660

Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
Contextual Info: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor

md918 Transistor

Abstract: germanium MM2264 2N3050 MC369G
Contextual Info: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

2N697 equivalent

Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10

2N3914

Abstract: 2n3219 2N4260 2N3910 2n3914 equivalent 2N3913 2N697 equivalent 2N915 BFY39 BSY39
Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Am bient h f e @>c VCE V e B Volts Volts M in/M ax mA II Type Electrical Characteristics @ 25° C VcE (S at) @ Volts m A /m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF Max 2N943 PNP