2N282 Search Results

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Contextual Info: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

General Semiconductor

Abstract: 2N2825 TWX910-950-1942 General Semiconductor Industries
Contextual Info: SÛUARE D CO/ GENERAL 3918590 , IS GENERAL V m Ö S5S S0 Ö GOGeQ'ì'ì S EMI CONDUCTOR General ^ S e m ic o n d u c to r Industries, Inc. • 95D b 02099 D C R . 12JA« " 2N2825 S Q U f lR E TI COMPHWY N P N S W IT C H IN G P O W E R T R A N S IS T O R S

2N2821

Abstract: TWX910-950-1942 General Semiconductor Industries
Contextual Info: SÚUARE ]> CO/ GENERAL 3918590 GENERAL 0525505 ODDEOTfl 4 S EMI CONDUCTOR General ^ Semiconductor . J^L Industries, Inc. 95D 02098 D CR® 2N2821 S Q U H H E T1 CDHPHW Y I NPN SWITCHING POWER TRANSISTORS T h is unique device utilizes General Sem iconductor Industries' C 2R® process w hich

to63

Contextual Info: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825

2N2820

Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340
Contextual Info: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je|WsÍ1mD53iT D | CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63

2N2828

Abstract: 2N2829 2N2828 - 2N2829
Contextual Info: , Jna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N1647 - 2N1650 2N1886 2N2828 - 2N2829 TYPE NO. PT MAXIMUM RATINGS @ Ic 25°C BVceo BVCEO BVEBO A V V V Watts 2N1647 40 80 60 6 3 HFE

2N2094

Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
Contextual Info: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821

Contextual Info: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822

2N5437

Abstract: 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339
Contextual Info: - "í . 00^3592 A P I A P I ELECTRONICS INC ~ ELECTRONICS INC 117= 26C 00236 2b .33-01 ¡>E^aOM3Sia [1000331. O . COIiLECTOR CURRENT = 2 5 AMPS NPN TŸPES D evice No C ase VCBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341

Contextual Info: Reliability Polarity Option TVpe No. A1331A7 O Q O O O m 37E D SEMELAB LTD Package v CEO <C eont hF E @ v CE/fC »T Pd 2N2817 2N2818 2N2819 2N2820 2N2821 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN T063 T063 T063 T063 T063 150 200 80 100 150 20

B0935

Abstract: 2s0880 je181 to127 2SC1983 Sanken 2S0762 B0177 to-53 MJE31A GS2013 G
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 >= 2.5 A, 2N389 2N1470 BOT29A BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 2N2034 2N2035 2N2036 2N2828 2N2829 2N1886 R4922 B0116 2N3418 BOT31AF BOT31AF MJE31A 2N4232 2N4232A 042C7

Contextual Info: r le = 30 AMPS DEVICE TYPE VOLTS BV ebo VOLTS P0 @ 100°C WATTS 80 100 150 80 100 80 100 150 80 100 6.0 6.0 6.0 8.0 8.0 TO-63 TO-3 80 80 80 80 TO-3 200 250 PACKAGE BVceo VOLTS 2N4003 TO-63 TO-63 TO-63 TO-63 TO-63 2N5733 2N5734 2N2823 2N2824 2N2825 2N4002 ^XG SR 50020

Contextual Info: 2N2829 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2N1620

Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N2824

Abstract: 2N2819 2N2771
Contextual Info: electronics inc POWER TRANSISTORS TYPE NO. 2N2757 200 MAXIMUM RATINGS Ic B V cbo BVcto BVteo V A V V 50 50 15 30 Ic A Vce V Test Sat Voltages Conditions V be Ic le lEBO V ce A A ma V V 10 4 1.5 a> hFE MIN MAX 10 2.5 10 2 25 2 25 2N2758 200 100 100 15 30 10

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2N3106

Abstract: 2N4146 2N4148
Contextual Info: discrete devices | jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current If (Amps) Max. Forward M ai. Reverie Voltages Vfom /V rom (volts) (Note 2) Maximum Junction Temperature

2N1016

Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
Contextual Info: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8

2N5330

Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
Contextual Info: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts