35N10 Search Results

35N100U1

Abstract: irm 38 D-68623 ixsn35n100u1
Contextual Info: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 Symbol Test Conditions V CES TJ = 25°C to 150°C 1 Maximum Ratings 1000 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM A Continuous ±20

Contextual Info: IGBT with Diode IXSN 35N100U1 v C ES ^C 25 v C E sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability éAi 2 4 Sym bol T est C onditions VC ES ^ = 25°C to 150°C 1000 V vC G R ^ = 25°C to 150°C; RGE = 1 MQ 1000 A VG ES Continuous ±20 V v G EM

Contextual Info: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM

TQ-204

Contextual Info: d i ’ High speed IGBT IXSH/IXSM 35N100A V CES = ^C25 = 70 A = 3.5 V v CE sat 1 0 0 0 V Short Circuit SO A Capability Symbol Test Conditions v CES v CGR v GES T, = 25='Cto150°C 1000 V T, = 25"C to 150°C; RGE = 1 M ii 1000 V Continuous ±20 V V«. Transient

35n10

Contextual Info: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM

ixsn 35N120U1

Abstract: 35N120U1 IXSN35N120U1 35n120u 40D50
Contextual Info: nixYS IGBT with Diode IXSN 35N100U1 IXSN 35N120U1 1000/1200 V 38 A 3.5 V CES ^C25 v CE sat Short Circuit SOA Capability G é Maximum Ratings Symbol Test Conditions V CES Tj =25°C to150°C 1000/1200 V V COR Tj = 25° C to 150° C; RGE= 1 M i2 1000/1200 V

35N120U1

Contextual Info: IGBT with Diode IXSN 35N100U1 IXSN 35N120U1 CES C25 VCE sat 1000/1200 V 38 A 3.5 V Short Circuit SOA Capability G é Symbol Test C onditions VCES T j = 25°C to 150°C 1000/1200 v CGR T j = 25°C to 150°C; RQE = 1 MQ 1000/1200 V v0ES Continuous ±20 V VGEM

Contextual Info: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM

Contextual Info: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM

35N100A

Abstract: 35N10
Contextual Info: High speed IGBT IXSH/IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient

35N100U1

Abstract: IXSN35N100U1
Contextual Info: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 A VGES Continuous ±20

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

SPD35N10

Abstract: 35n10 P-TO252 Q67042-S4125
Contextual Info: 35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature V R DS on 44 m
ID 35 A
Avalanche rated P-TO252
dv/dt rated Type 35N10 Package P-TO252 Ordering Code

B1116

Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40

35n10

Abstract: SMD marking code 35A
Contextual Info: 35N10 35N10,35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated P-TO262-3-1 V R DS on 44 m
ID 35 A P-TO263-3-2 P-TO220-3-1
dv/dt rated Type 35N10 Package

35n10

Abstract: SPB35N10 SPI35N10 SPP35N10 DSA00135269 Q67042-S4103
Contextual Info: Preliminary data 35N10 35N10,35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated P-TO262-3-1 V R DS on 44 m
ID 35 A P-TO263-3-2 P-TO220-3-1
dv/dt rated

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

30n60

Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Contextual Info: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power

Contextual Info: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62

TC1724

Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784
Contextual Info: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3