RFKT Search Results

RFK30N12

Abstract: RFK30N15
Contextual Info: Standard Power MOSFETs RFK30N12, RFK30N15 File Number 1455 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 30 A, 120 V - 150 V ros on =0.075 Q Features: • SO A is power-dissipation lim ited

RFK25N18

Abstract: RFK25N20 TI58 rca application notes
Contextual Info: Standard Power MOSFETs RFK25N18, RFK25N20 File Number N-Channel Enhancement-Mode Power Field-Effect Transistors 1500 25 A, 180 V - 2 0 0 V ros on = 0.15 Q Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds m Linear transfer characteristics

RFK25P10

Abstract: RFK25P08 Ta9412b 015fi RCA bipolar transistors
Contextual Info: Standard Power MOSFETs RFK25P08, RFK25P10 File N u m be r P-Channel Enhancement-Mode Power Field-Effect Transistors 1516 ° 25 A, -100 V — -80 V rDs on : 0.1 5 f i Features: • S O A is p o w e r - d is s ip a tio n lim ite d m N a n o s e c o n d s w itc h in g s p e e d s

rfkt

Abstract: 35N08 rfk35n RFK35N10 RFK35N08
Contextual Info: • 4 3 02 27 1 0G 5 4 4 3 4 574 ■ RFK35N08 HAS ¡2 H a r r is RFK35N10 N-Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -2 0 4 A E • 35A, 80V and 100V TOP VIEW • rDS on = 0 .0 5 5 ÎÏ ■ SOA is Power-Dissipation Limited

Contextual Info: 4302271 00S4453 42t • HAS RFK45N05 H a r r is RFK45N06 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T O -2 0 4 A E • 45 A , 5 0 V and 6 0 V • l'DS on = 0 .0 4 0 ÎÎ • S O A is P o w er-D issip atio n Lim ited

m 9625

Abstract: RFK35N08 RFK35N10
Contextual Info: DÏ 3875081 G È DËJ 3ö75Qäl SOLID STATE Standard Power MOSFETs □□lflEDS S “ 01E _ _ 18205 RFK35N08, RFK35N10 D T S Ì- IS File Number 1499 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: , One. J.EIIE.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 RFK35N08, RFK35N10 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE

RFK35N08

Abstract: RFK35N10 m 9625 T0204AE
Contextual Info: DÏ 3875081 G È DËJ 3ö75Qäl SOLID STATE Standard Power MOSFETs □□lflEDS S “ 01E _ _ 18205 RFK35N08, RFK35N10 D T S Ì- IS File Number 1499 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

J374

Abstract: RFH35N08 RFH35N10 RFK35N10 RFK35N08
Contextual Info: _~DÏ D Ë J 3Û75DÛ1 D D l ö S O l 3 8 7 5 Ö 8 1 G E SOLID fl J - STATE Standard Pow er M O S F E T s _ 0 1E 18201 RFH35N08, RFH35N10 DT - S ^ ^ I S File N u m b e r 1634 Power MOS Field-Effect Transistors N-Chanhel Enhancement-Mode

ta948

Abstract: RFH45N06 RFH45N05 18216 RFK45N05
Contextual Info: 3875081 G E SOLID STATE Standard Power MOSFETs _ □1 01E 18209 D È j 3ö?S0äl ÜLUßacn 2 RFH45N05, RFH45N06 D T ’5 ? ’'/3 - File N u m b e r 1635 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

diode RA 225 R

Abstract: 45N05 rfk45n ld225 RFK45N05
Contextual Info: RFK45N05 RFK45N06 2 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Package Features T O -20 4 A E • 45A, 50V and 60V • r D S o n ) = 0 . 0 4 0 Î Î • SOA is Power-Dlssipation Limited DRAIN (FLANGE) f SOURCE

RFK30N12

Abstract: 30N12 30N15 N12R
Contextual Info: m H a rris RFK30N12 RFK30N15 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Features Package TO-204AE • 30 A , 1 2 0V a n d 1 5 0V TOP VIEW • r D S o n = 0 .0 7 5 ÎÎ • S O A is P o w e r-D is s ip a tio n L im ite d • N a n o s e c o n d S w itc h in g S p e e d s

RFH25N18

Abstract: RFH25N20
Contextual Info: G E SOLID STATE dËJ ~ai -_^8Z 50 '* G E S O L I D S T A T E 3075001 0 1E O Q iaiflS 3 18185 Standard Power MOSFETs_ RFH25N18, RFH25N20 File N u m b e r 1631 Power MQS Field-Effect Transistors TERM INAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors

RFK45N05

Abstract: H138 RFK45N06 rca 7139 37143 IDI TRANSISTORS
Contextual Info: Standard Power MOSFETs RFK45N05, RFK45N06 File N um ber N-Channel Enhancement-Mode Power Field-Effect Transistors 1498 45 A, 50 V - 60 V rüs on = 0.040 fi Features: • SOA is power-dissipation limited m Nanosecond switching speeds ■ Linear transfer characteristics

DS145

Abstract: 25N18 25N20 RFK25N20
Contextual Info: gì H a r r is R F K 2 5 N 1 8 R F K 2 5 N 2 0 N -C h a n n e l E n h an ce m e n t-M o d e Pow er F ie ld -E ffe c t Transistors May 1992 F e a tu re s Package T 0 -2 0 4 A E • 25A , 1 80V and 2 00V T O P VIEW • >'DS on = 0 .1 5 ft • S O A is P ow er-D issip atio n Lim ited

RFK30N12

Abstract: C039 18198 RFH30N12 RFH30N15 Scans-00121260
Contextual Info: 3 8 7 5 0 8 T gT E ~ S O L Í D Standard Power MOSFETs 3 ñ 7 5 D ñ i DI G E S O LI » STATE STATE 0 1E o a i a n 3 18193 a D iT - ^ - '/S ’ _ RFH30N12, RFH30N15 File N u m b e r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

RFM12P10

Abstract: RFH25P10 RFP12P10 RFK25P10 Ta9412b RFM12P08 RFP12P08 TA9411 18243
Contextual Info: G E SOLI» STATE ” 38 7 5 0 8 1 qj G E SOL IJD ^STATE _ Standard Power MÔSFÈTs DeTJ afiTSDfll DDlfla37 7 J ~ ÔIË 18237 D w ' " ’ ~~- .-1_ ; RFM12P08, RFM12P10, RFP12P08, RFP12P10 ^ ^ File N u m b e r ^ 1495