RFH25N20 Search Results
RFH25N20 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RFH25N20 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| RFH25N20 | General Electric | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Drain current RMS continuous 25A. | Scan | 445.97KB | 8 | ||
| RFH25N20 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | 238.31KB | 4 | ||
| RFH25N20 | International Rectifier | RF and BUZ Series Power MOSFETs - N-Channel | Scan | 40.6KB | 1 | ||
| RFH25N20 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 78.19KB | 1 |
RFH25N20 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RFH25N18
Abstract: RFH25N20 37160
|
OCR Scan |
rfh25n18rfh25n2092cs-93741an-7254+3 | |
25N20Contextual Info: RFH25N18 RFH25N20 jXî h a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Package F e a tu re s T O -2 1 8 A C • 25A, 1 8 0V and 2 0 0V T O P VIEW • rD S on = 0 .1 5 ÎÏ • S O A is P ow er-D issip atio n Limited >SOURCE |
OCR Scan |
rfh25n18rfh25n2092cs-57i6537i66+1 | |
RFH25N18
Abstract: RFH25N20
|
OCR Scan |
3875081grfh25n18rfh25n202cs-5j74i+2 | |
|
Contextual Info: <^>E.m.L-L.ond.uctoi iJ-*ioaucti, Line, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH25N18, RFH25N20 Power MQS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors |
Original |
rfh25n18rfh25n20-200vrfh2sn20+3 | |
buz11
Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
|
OCR Scan |
t0-204o-205o-218o-220+15 | |
|
Contextual Info: m H a r r i 0054414 7flt. • HAS . s . . f ^ _ . . R F H 2 5 N R F H 2 5 N . ^ 1 2 8 N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features TO-218AC TOP VIEW • 25A , 180V and 2 0 0V • rDSf011) = 0 .1 5 ft • S O A is P ow er-D issipation Lim ited |
OCR Scan |
o-218acrdsf011rfh25n18rfh25n20+1 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
|
Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
|
OCR Scan |
2sk2952sk2962sk3082sk310+16 | |
4311 mosfet transistor
Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
|
OCR Scan |
2n67552n67562n67572n6758+16 | |
TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
|
OCR Scan |
2sk2952sk2962sk3082sk310+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
|
Original |
2n70002n70022sj3772sj378+16 | |
equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
|
OCR Scan |
1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7 | |
TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
|
OCR Scan |
bbs3131blu521n321byw56+13 |