8P08
Abstract: RFP8P08 37149 RFM8P08 RFM8P10 RFP8P10 TA9411 TA-941
Contextual Info: Standard Power MOSFETs RFM8P08, RFM8P10, RFP8P08, RFP8P10 File Number 1496 P-Channel Enhanceiment-Mode Power Field-Effect Transistors 8 A, -80 V and -100 V rDs on = 0.4 fi Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics
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rfm8p08rfm8p10rfp8p08rfp8p10+692cs-36465powe8p108p0837149ta9411ta-941
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RFP6P10
Abstract: 37149 RFM6P08 RFM6P10 RFP6P08 MCI 1496 P 2C3370
Contextual Info: E SOLID STATE D T | 3a7SDfll 0Dlfl2aS 0 H Ì ¿töS5081 G E S O L I D S T A T E 0 1E 18225 Standard Power MOSFETs _ RFM6P08, RFM6P10, RFP6P08, RFP6P10 D T -39-^i File Number 1490 P-Channel Enhancement-Mode Power Field-Effect Transistors 6 A, 80 V — 100 V
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3fl750flld01fl25srfm6p08rfm6p10+5rfp6p08rfp6p1037149mci 1496 p2c3370
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RFM12P10
Abstract: RFP12P10 12P10 RFM12P08 RFP12P08 TA9411 TA9410
Contextual Info: Standard Power MOSFETs RFM12P08, RFM12P10, RFP12P08, RFP12P10 F ile N u m b e r 1495 Power MOS Field-Elffect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 12 A , - 8 0 V a n d - 1 0 0 V rD s on = 0 .3 Q Features:
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rfm12p08rfm12p10rfp12p08rfp12p10+4and-10012p10ta9411ta9410
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RFM12P10
Abstract: RFH25P10 RFP12P10 RFK25P10 Ta9412b RFM12P08 RFP12P08 TA9411 18243
Contextual Info: G E SOLI» STATE ” 38 7 5 0 8 1 qj G E SOL IJD ^STATE _ Standard Power MÔSFÈTs DeTJ afiTSDfll DDlfla37 7 J ~ ÔIË 18237 D w ' " ’ ~~- .-1_ ; RFM12P08, RFM12P10, RFP12P08, RFP12P10 ^ ^ File N u m b e r ^ 1495
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rfm12p08rfm12p10rfp12p08rfp12p10+792cs-36485rfk25p08rfh25p10rfk25p10ta9412bta941118243
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