RFH35N10 Search Results
RFH35N10 Datasheets (6)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RFH35N10 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| RFH35N10 | General Electric | Power Mos Field - Effect Transistors N-Channel Enhancement - Mode Power Field - Effect Transistors | Scan | 147.14KB | 3 | ||
| RFH35N10 | General Electric | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 35A. | Scan | 428.68KB | 8 | ||
| RFH35N10 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | 231.85KB | 4 | ||
| RFH35N10 | International Rectifier | RF and BUZ Series Power MOSFETs - N-Channel | Scan | 40.6KB | 1 | ||
| RFH35N10 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 78.19KB | 1 |