RFH35N08 Search Results
RFH35N08 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RFH35N08 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| RFH35N08 | General Electric | POWER MOS FIELD - EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS | Scan | 147.14KB | 3 | ||
| RFH35N08 | General Electric | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 35A. | Scan | 428.68KB | 8 | ||
| RFH35N08 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | 231.85KB | 4 | ||
| RFH35N08 | International Rectifier | RF and BUZ Series Power MOSFETs - N-Channel | Scan | 40.6KB | 1 | ||
| RFH35N08 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 78.19KB | 1 |
RFH35N08 Price and Stock
Harris Semiconductor RFH35N08N Channel Enhancement Mode Power Field Effect Transistor |
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RFH35N08 | 27 |
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RFH35N08 | 36 |
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RFH35N08 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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RFH35N08
Abstract: RFH35N10
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OCR Scan |
rfh35n08rfh35n1092cs-j374i3fi75g+2 | |
J374
Abstract: RFH35N08 RFH35N10 RFK35N10 RFK35N08
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OCR Scan |
rfh35n08rfh35n1092cs-j374i2cs17w7+7 | |
RFH35N08
Abstract: RFH35N10
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rfh35n08rfh35n10an-7254an-7260+2 | |
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Contextual Info: • 4302271 00S4430 TET ■ HAS RFH35N08 RFH35N10 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package TO -21 8 A C • 35 A , 8 0 V and 100V TOP VIEW • rog o n = 0 .0 5 5 0 • S O A is P ow er-D issip atio n Limited |
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00s4430rfh35n08rfh35n109jcs-57i74 | |
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Contextual Info: 'jziizu <^s.tni- Lonauctoi i, One, TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH35N08, RFH35N10 Power MOS Field-Effect Transistors N-Chanhel Enhancement-Mode Power Field-Effect Transistors |
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rfh35n08rfh35n10rfh3sn1000a//js | |
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Contextual Info: RFH35N08 RFH35N10 2 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1 9 9 1 Features Package T O -2 1 8 A C • 35A, 8 0 V and 100V T O P VIE W • nDS on) = 0 .0 5 5 0 • SO A is P ow er-D issip atio n Limited •SOURCE DRAIN |
OCR Scan |
rfh35n08rfh35n1092cs-jh73an-7254+2 | |
buz11
Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
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OCR Scan |
t0-204o-205o-218o-220+15 | |
IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
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OCR Scan |
2sk2952sk2962sk3082sk310+16 | |
4311 mosfet transistor
Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
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OCR Scan |
2n67552n67562n67572n6758+16 | |
TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
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OCR Scan |
2sk2952sk2962sk3082sk310+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
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OCR Scan |
cb-f36c2sd16422sd21822sc4489+11 | |
TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
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bbs3131blu521n321byw56+13 |