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    TH35N06 Search Results

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    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


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    2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324tp8n10th15n20th7n50tp4n10tp10n05irfp350fitp5n35tp5n40tp4n45tp3n40 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit PDF

    MTH13N50

    Abstract: MTH40N10 MTH7N50 MTH15N20 MTH25N10 MTH35N15 MTH35N05 MTH25N08 mth5n100 mth7n50 Transistor
    Contextual Info: POWER TRAN SISTO RS — TM O S PLASTIC continued Plastic TM OS Power MO SFETs — TO-218AC G D S rDS(on) @ <D V BR(DSS) (Volts) Min (Ohms) Max (Amp) 1000 3 2.5 Device 950 900 550 500 450 400 350 MTH5N100 'D(Cont) (Amp) M ax PD @ Te = 25°C (W ans) M ax 5


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    o-218acmth5n100mth5n95mth6n90+14mth6n85mth6n60mth8n60mth6n55mth8n55mth7n50mth13n50mth40n10mth15n20mth25n10mth35n15mth35n05mth25n08mth7n50 transistor PDF

    35N06

    Abstract: MTM35N06 TH35N06 35N05 MTM35N05 TH35N05 MTH35N05
    Contextual Info: MOTOROLA • SEMICONDUCTOR m h h h h TECHNICAL DATA MTH35N05 TH35N06 MTM35N05 MTM35N06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r


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    35n06mtm35n06th35n0635n05+3mtm35n05th35n05mth35n05 PDF