2SA109 Search Results

2SA1093

Abstract: 2SC2563
Contextual Info: Inchange Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION

EAt-11

Abstract: 2SA1096 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A 2SA1096, 2SA1096A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC2497, 2SC2497A • Features • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S C 2497, 2S C 2497A

2SC2563

Abstract: 2SA1093
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1093 S ilicon PNP Power Transistors DESCRIPTION • With TO-3P l package • Complement to type 2SC2563 • High transition frequency APPLICATIONS • Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION

2SA1094

Abstract: 2SC2564
Contextual Info: Inchange Semiconductor Product Specification 2SA1094 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC2564 APPLICATIONS ·For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

2SC2497A

Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

a1091 transistor

Abstract: a1091 R transistor 2SA1091 A1091 vqe 14 display transistor a1091 2SC2551
Contextual Info: 2SA1091 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 091 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS . 5.1 M AX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • • •

Contextual Info: J.E.\i£,u iJ-'ioaueti, line. {s TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1096 DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo= -50V (Min)

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. Silicon PNP Power Transistor 2SA1093 DESCRIPTION • Collector-Emitter Breakdown Voltage:V (BR) cEo=-120V(Min.) • Good Linearity of hF£

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC2497 and 2SC2497A 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector to emitter voltage

Contextual Info: 2SC2551 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR AND DRIVER APPLICATIONS Package: TO-92 * Complement To 2SA1091 * Collector-Base Voltage VCBO=300v ABSOLUTE MAXIMUM RATINGS #t T u r t l e

2SC2565

Abstract: 2SA1095 2SC2565 specification power
Contextual Info: AOK Product Specification AOK Semiconductor 2SA1095 Silicon PNP P o w er Transistors DESCRIPTION • W ith M T-200 package • C o m p le m e nt to type 2S C 2565 • High breakdow n voltage • H igh tra n s itio n frequency APPLICATIONS • P ow er am plifie r applications

2SA1091

Abstract: 2SC2551
Contextual Info: 2SA1091 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SA1091 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = −300 V, VCEO = −300 V

2SA1095

Abstract: 2Sc2565 2SC25 2SA1095 2SC2565
Contextual Info: JMnic Product Specification 2SA1095 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC2565 ・High breakdown voltage ・High transition frequency APPLICATIONS ・Power amplifier applications ・Recommended for 100W high-fidelity audio

2SA1096

Abstract: 2SA1096A Jmnic
Contextual Info: JMnic Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2497/2SC2497A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SC2564

Abstract: 2SA1094
Contextual Info: Inchange Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SA1094 ・High transition frequency APPLICATIONS ・For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION

2SA1091

Abstract: 2SC2551
Contextual Info: 2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC2564

Abstract: 2sa1094
Contextual Info: SavantIC Semiconductor Product Specification 2SC2564 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SA1094 ·High transition frequency APPLICATIONS ·For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION

2SA1096

Abstract: 2SA1096A 2SA109
Contextual Info: SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA1095

Abstract: 2Sc2565 2SC2565 specification power
Contextual Info: SavantIC Semiconductor Product Specification 2SA1095 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC2565 ·High breakdown voltage ·High transition frequency APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio

Contextual Info: | e 2SA1091 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATION Package; TO-92 * Complement to 2SC2551 • Collector-Emitter Voltage VCEO=-300V Symbol R ating Unit Collector-Base Voltage

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2sc2547

Abstract: 2SC2545
Contextual Info: H ITACH I 2SC2545, 2SC2546, 2SC2547 SILICON NPN EPITAXIAL LOW FREQUENCY LOW NOiSE AMPLIFIER Complemenlary pair wilti 2SA1G&3, 2SA1084 and 2SA1095 fi«;:«? 2. n \ i p, I •b; / - JEDEC TO-92 ■ ABSOLUTE fJIAXIMUM RATINGS tTa^S’ C Item M CiStt ; BC2M7 ; Unit