6N100Q Search Results
6N100Q Price and Stock
IXYS Corporation IXFT6N100QMOSFETs 6 Amps 1000V 2 Rds |
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IXFT6N100Q |
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IXYS Corporation IXFH6N100QMOSFETs 6 Amps 1000V 2 Rds |
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IXFH6N100Q |
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6N100Q Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 1000 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1000 V V GS Continuous ±20 V V GSM Transient |
OCR Scan |
6n100qo-268 | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM |
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6n100qo-247o-268o-268aa | |
6N100Q
Abstract: IXFT6N100Q
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6n100qtab72o-268ixft6n100q | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 |
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6n100qo-247o-268 | |
IXFH6N100QContextual Info: DIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Voss V oo „ DS on Test Conditions Maximum Ratings T j =25°C to150°C 1000 V T j = 25°C to 150°C; Ros = 1 M fl 1000 V Continuous ±20 V V os« Transient ±30 |
OCR Scan |
6n100qto150o-247o-268+1 | |
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Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
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6n100qo-247o-268 | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM |
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6n100qo-247o-268sour100+1 | |
C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
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o-247plus247isoplus247tmo-204+15 | |
sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
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o-247plus247isoplus247tmo-268+16 | |
7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
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axc-051axc-053axc-101axc-102+16 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 | |
C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
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o-247plus247isoplus247tmo-204+16 | |
C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
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OCR Scan |
67n1075n1075n10q80n10q+16 |