IXFT20N80 Search Results

IXFT20N80 Datasheets (2)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFT20N80P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 20A TO-268	Original	PDF		5
IXFT20N80Q		IXYS	800V HiPerFET power MOSFET Q-class	Original	PDF	72.49KB	2

IXFT20N80 Price and Stock

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IXYS Corporation


IXYS Corporation IXFT20N80P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IXFT20N80P		12			1 $22.45 10 $19.96 100 $19.96 1000 $19.96 10000 $19.96	Buy Now
TME	IXFT20N80P				1	1 $6.86 10 $5.46 100 $4.91 1000 $4.91 10000 $4.91	Get Quote

IXFT20N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class VDSS = 800 V = 20 A ID25 RDS on = 0.42 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS	Original	o-247 o-268 o-264 ixfh20n80q +2ixfk20n80q ixft20n80q	PDF
Contextual Info: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	o-247 o-268 ixfh20n80q ixft20n80q +2728b1 123b1	PDF
IXFH20N80Q Abstract: IXFK20N80Q IXFT20N80Q IXFT20N80 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS on = 0.42 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS	Original	ixfh20n80q ixfk20n80q ixft20n80q o-247 +1ixft20n80	PDF
IXFH20N80Q Abstract: IXFK20N80Q IXFT20N80Q Contextual Info: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfh20n80q ixfk20n80q ixft20n80q o-247 +1728b1	PDF
Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings	OCR Scan	ixfh20n80q ixfk20n80q ixft20n80q o-247	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800	Original	ixfh20n80q ixfk20n80q ixft20n80q o-247 +1728b1	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	o-247 plus247 isoplus247tm o-268 +16o-264 80n06-11 76n07-11 76n07-12 100n10 170n10 sd 20n60 ixfx 44n80 20n80 60n60 9n80 c2625 power mosfet 100n20 ixfh32n50 230n10 8n80	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	isoplus220tm isoplus247tmv t0268 t0264 +16ot227b o-263 o-220 247tm o-247 o-204 ne 22 mosfet ixfh26n60q ixft12n100q ixfr100n25 ixfn26n90 fn230 ixfn36n60 n50p ixfn44n50u2 ixfn80n50	PDF