90N30 Search Results

Contextual Info: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient

Contextual Info: IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 300 V = 90 A Ω = 33 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous

90n30

Contextual Info: IXFN 90N30 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 = 300 V = 90 A Ω = 33 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns G Preliminary Data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: IXFR 90N30 HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS = 300 V ID25 = 75 A RDS on = 33 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFX 90N30 IXFK 90N30 V A V„ss = 300 >« = 90 ^D S on “ Single MOSFET Die ^ m fl trr <250 ns 09 Symbol Test C onditions V oss Tj =25°Cto150°C T, =25°C to150°C ; RGS= 1 Mi2 300 300 V V Continuous

Contextual Info: aixYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 90N30 Test Conditions V VDQH 300 V VQS VGSM Continuous i20 V Transient 130 V ^D25 Tc =25°C 90 A <OM Tc = 25° C, pulse width limited by TJM 360 A Tc =25°C 90 A Tc =25°C

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 90N30 VDSS ID25 RDS on = 300 V = 90 A = 33 mW D trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Advanced Technical Information IXFN 90N30 HiPerFETTM Power MOSFETs Single Die MOSFET = 300 V = 90 A = 33 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V

90N30

Abstract: 125OC ID104
Contextual Info: HiPerFETTM Power MOSFETs IXFX 90N30 IXFK 90N30 VDSS ID25 RDS on Single MOSFET Die = 300 V = 90 A Ω = 33 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous

Contextual Info: IXFN 90N30 HiPerFETTM Power MOSFETs Single Die MOSFET = 300 V = 90 A Ω = 33 mΩ RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns G Preliminary Data Symbol VDSS ID25 S Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: nixYS Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFET Power MOSFETs VDSS Single MOSFET Die Maximum Ratings TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 300 300 V V Continuous Transient ±20 ±30 V V Tc Tc Tc Tc

90N30

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 90N30 IXFK 90N30 VDSS ID25 RDS on Single MOSFET Die = 300 V = 90 A = 33 mW trr £ 250 ns Maximum Ratings PLUS 247TM Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

IXFN 360

Abstract: IXFN90N30
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET 90N30 VDSS ID25 RDS on = 300 V = 90 A = 33 mW D trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

0/PDP-2N-1000

Contextual Info: 90N30 300V, 90A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01