FGP90N30TU Search Results
FGP90N30TU Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FGP90N30TU |
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300V, 90A PDP IGBT | Original | 680.96KB | 7 |
FGP90N30TU Price and Stock
Fairchild Semiconductor Corporation FGP90N30TUInsulated Gate Bipolar Transistor, 90A I(C), 300V V(BR)CES, N-Channel, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FGP90N30TU | 21 | 1 |
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FGP90N30TU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
90A IGBT
Abstract: igbt 300V 10A datasheet FGP90N30 FGP90N30TU
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Original |
FGP90N30 O-220 FGP90N30 90A IGBT igbt 300V 10A datasheet FGP90N30TU | |
0/PDP-2N-1000Contextual Info: FGP90N30 300V, 90A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential. |
Original |
FGP90N30 O-220 FGP90N30TU 0/PDP-2N-1000 |