80N50 Search Results
80N50 Price and Stock
Vishay Intertechnologies RWR80N5000FRR36RES WW EGN-3-80 500 1% - Custom Tape W/Leader (Alt: RWR80N5000FRR36) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RWR80N5000FRR36 | Tape w/Leader | 100 |
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Vishay Intertechnologies RWR80N5000FRK36RES WW EGN-3-80 500 1% - Custom Tape W/Leader (Alt: RWR80N5000FRK36) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RWR80N5000FRK36 | Tape w/Leader | 200 |
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CTS Corporation 580N50005DAT- Tape and Reel (Alt: 580N50005DAT) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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580N50005DAT | Tape & Reel | 16 Weeks | 1,000 |
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580N50005DAT |
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Vishay Intertechnologies RWR80N50R0FSBSLThrough Hole Resistor, 50 ohm, RWR Series, 2 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Bulk (Alt: RWR80N50R0FSBSL) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RWR80N50R0FSBSL | Bulk | 18 Weeks | 100 |
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CTS Corporation 580N500X2CTT- Tape and Reel (Alt: 580N500X2CTT) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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580N500X2CTT | Tape & Reel | 16 Weeks | 1,000 |
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80N50 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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80N50P
Abstract: IXFK 80N50P PLUS247
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80N50P O-264 80N50P IXFK 80N50P PLUS247 | |
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Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 |
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80N50 OT-227 E153432 | |
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Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings |
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80N50P 80N50P O-264 PLUS247 | |
80N50DContextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 = 500 V = 80 A = 48 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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80N50 OT-227 E153432 80N50D | |
80n50
Abstract: 80N50P ISOPLUS247 4525 GE alize
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ISOPLUS247TM 80N50P 80n50 80N50P ISOPLUS247 4525 GE alize | |
80n50
Abstract: 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80
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80N50 75N50 OT-227 E153432 125OC 728B1 80n50 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80 | |
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Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
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80N50 100kHz 125OC | |
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Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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80N50 227TM 728B1 | |
80N50Contextual Info: nixYs Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 80N50 V DSS 500 V 80 A 48 mQ I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS Tj =25°C to150°C 500 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 |
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IXFN80N50 to150 OT-227 E153432 80N50 | |
80N50 MOSFET
Abstract: 80N50 75N50 SNC80
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80N50 75N50 OT-227 E153432 728B1 80N50 MOSFET 80N50 75N50 SNC80 | |
80n50
Abstract: 80N50 MOSFET
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80N50 227TM 728B1 80n50 80N50 MOSFET | |
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Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs VDSS = ID25 = RDS on = ≤ trr IXFB 80N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions |
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80N50Q 264TM 728B1 | |
80N50P
Abstract: IXFN 80N50P E153432
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80N50P 80N50P IXFN 80N50P E153432 | |
80N50Q2
Abstract: 0169E 123B16
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80N50Q2 OT-227 E153432 728B1 123B1 728B1 065B1 80N50Q2 0169E 123B16 | |
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80N50
Abstract: 80N50P IXFN 80N50P
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80N50P 80N50 80N50P IXFN 80N50P | |
80N50P
Abstract: IXFK 80N50P 80N50 PLUS247
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80N50P 80N50P IXFK 80N50P 80N50 PLUS247 | |
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Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings |
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ISOPLUS247TM 80N50P | |
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Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C |
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80N50P | |
80N50P
Abstract: ISOPLUS247 PLUS247
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ISOPLUS247TM 80N50P ISOPLUS247 E153432 405B2 80N50P ISOPLUS247 PLUS247 | |
80N50Q2
Abstract: 80n5 IXFB 80N50Q2
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80N50Q2 264TM 065B1 728B1 123B1 728B1 80N50Q2 80n5 IXFB 80N50Q2 | |
80n50
Abstract: 80N50 MOSFET 125OC IXFN80N50
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80N50 100kHz 125OC 80n50 80N50 MOSFET 125OC IXFN80N50 | |
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Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions |
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80N50Q2 264TM 728B1 123B1 065B1 | |
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Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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80N50P OT-227 E153432 405B2 | |
80N50Q2
Abstract: IXFL80N50Q2
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80N50Q2 405B2 80N50Q2 IXFL80N50Q2 | |