ALIZE Search Results

Contextual Info: Te x a s In s t r u m e n t s LMH0034 SMPTE 292M / 259M Adaptive Cable alizer General Description Features The L M H 0034 S M P T E 292M /2 5 9 M ad a ptive cable e q u alize r is a m on o lith ic integrated circuit fo r equalizin g data tra n sm it­ ted o v e r cable or any m edia w ith sim ila r d isp e rsive loss

GM71C4256A-80

Contextual Info: PRELIMINARY SPECIFICATION GM71C4256A 262,144 WORDS X 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71C4256A is the new generation dynam ic RAM organized 262,144 x 4 Bit. GM71C4256A has re­ 20 PLASTIC DIP alized higher density, higher perform ance and va­

658512

Abstract: 658512A HM658512ALFP-8 Hitachi DSA00164
Contextual Info: HM658512A Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh ADE-203-218C(Z) Rev. 3.0 Nov. 1997 Description The Hitac hi HM658512A is a C MOS pseudo static R AM orga nized 512-kw ord × 8-bit. It re alize s higher density, higher per forma nce and low powe r consumption by employing 0. 8 µm Hi-C MOS proc ess

HM5112805FTD-6

Abstract: HM5113805FTD-6
Contextual Info: HM5112805FTD-6, HM5113805FTD-6 EO 128M EDO DRAM 16-Mword x 8-bit 8k refresh/4k refresh E0175H10 (Ver. 1.0) Jul. 13, 2001 Description L The HM5112805F TD, HM5113805F ar e 128M-bit dynamic R AMs orga nized as 16, 777,216-w ord × 8-bit. The y have re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology.

HM5112805FLTD-6

Abstract: HM5113805FLTD-6
Contextual Info: HM5112805FLTD-6, HM5113805FLTD-6 EO 128M EDO DRAM 16-Mword x 8-bit 8k refresh/4k refresh E0176H10 (Ver. 1.0) Jul. 12, 2001 Description L The HM5112805F L, HM5113805F L ar e 128M-bit dynamic R AMs orga nized as 16, 777,216-w ord × 8-bit. The y have re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology.

HM5113165FTD-6

Contextual Info: HM5113165FTD-6 EO 128M EDO DRAM 8-Mword x 16-bit 4k refresh E0177H10 (Ver. 1.0) Jul. 5, 2001 L Description The HM5113165F is 128M-bit dynamic R AM orga nized as 8, 388,608-w ord × 16-bit. It has re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology. HM5113165F off ers Extende d Da ta

74F280B

Abstract: I74F280BD I74F280BN N74F280BD N74F280BN
Contextual Info: Philips Sem iconductors Product specification 9-bit odd/even parity generator/checker 74F280B PIN CONFIGURATION FEATURES • High-impedance NPN base inputs for reduced loading 20nA in Low and High states • Buffered inputs — one norm alized load '6 I T

Contextual Info: CO PYRIG H T R E L E A S E D FO R P U B LIC A T IO N LOC A LL RIGHTS R ESER VED . R EVISIO N S D IS T D E S C R IP T IO N E1 1m a r 11 RK HMR REVISED PER E C O - 1 1 - 0 0 4 8 2 0 D 0 . 0 0 0 7 6 [ . 0 0 0 0 3 0 ] MIN GOLD AT POIN T OF M E A S U R E M E N T IN T H E LOC ALIZED GOLD PLATE

Contextual Info: HM514190A/AL, HM51S4190A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 18-bit. HM514190A/AL have re­ alized higher density, higher performance and various func­

514270

Abstract: HM514270AJ8
Contextual Info: HM514270A/AL, HM51S4270A/AL Series 262,144-w ord x 16-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514270A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 16-bit. HM514270A/AL have re­ alized higher density, higher performance and various func­

T6KB

Abstract: K2416 AK 2025 SC11008
Contextual Info: SC11004/SC11014 300/1200 Bit Per Second Modem 'w SIERRA SEMICONDUCTOR A ll m o d u lato rs, dem od ulators, an d filte rs w ith c o m p ro m ise eq u alizers o n chip □ C all progress m ode, ton e gen ­ erato rs for D T M F , V .22 guard and calling tones

ic for half subtractor

Contextual Info: TMC3210 T CMOS Floating-Point Divider 32-Bit, 2.5MFLOPS The T M C 3 2 1 0 is a C M O S m onolithic device w hich is capable of perform ing a full 3 2 -b it floating-point division in 4 0 0 nanoseconds. The floating-point device divides norm alized num bers expressed in IEEE 3 2 -b it sin gle­

HM514270AJ8

Contextual Info: HM514270A/AL, HM51S4270A/AL Series 262,144-Word X 16-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514270A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 16-bit. HM514270A/AL have re­ alized higher density, higher performance and various func­

Contextual Info: HM514260A/AL, HM51S4260A/AL Series 262,144-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514260A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 16-bit. HM514260A/AL have re­ alized higher density, higher performance and various func­

S20250-1

Abstract: S20-250 S202501
Contextual Info: is uNPuBLiSHeo. «EV15 IONS ft£LCAC£3 FOR PU9LI CAT IOW n r REV, EC 0502-0467-97 / \ HATERIALi H OUSING - PBT POLYESTER TFRH1NAI - 0.35 .014 THICK PH0S-9R0NZE PLATED WITH t.OOOOSOJ THICK HARD GOLD IN L O C ALIZED GOLD PLATE AREA ANO 2.03fjm [.OOOOHOl THICK TIN-LEAD IN SOLDER AREA OVER 1.27pm

transistor tl 4311

Abstract: transistor 2sc1570 TRANSISTOR BC 157 TRANSISTOR BC 158 PA 2027A 2SC1570 TRANSISTOR IFW S2003A opa 2064 TRANSISTOR "BC 157"
Contextual Info: 3EE D SANYO SE MICONDUCTOR CORP 7Ti707b OGDÖÖ3Ö 1 | r - 2003A ' 2 f - / s N P N Epitaxial P la n a r S ilic o n T ra n s is to r Low-Noise Amp Applications 43 IE The 2SC1570 is developed as very low-noise tra n s isto r and is especially suited for use in equ alizer first

HM62V8512C

Abstract: HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLRR-5 HM62V8512CLRR-5SL HM62V8512CLTT-5 HM62V8512CLTT-5SL Hitachi DSA00205
Contextual Info: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210D (Z) Rev. 4.0 Aug. 5, 2002 Description The Hitac hi HM62V8512C is a 4-Mbit static R AM orga nized 512-kw ord × 8-bit. It re alize s higher density, higher per forma nce and low powe r consumption by employing C MOS proc ess tec hnology (6- tr ansistor

1CP-N10

Contextual Info: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,1 94 ,3 0 4 -w o rd x 1-bit Dynam ic Random A ccess M em ory HITACHI T h e H ita c h i H M 5 1 4 1 0 0 C is a C M O S d y n a m ic R A M o r g a n iz e d 4 ,1 9 4 ,3 0 4 w o rd s x 1 b its . H M 5 1 4 1 0 0 C has re alized h ig h e r density, h ig h e r

frequency scanner radio circuit

Abstract: le614 matrox MC14497P
Contextual Info: MOTOROLA Order this document by MC14497/D SEMICONDUCTOR TECHNICAL DATA MC14497 PCM Remote Control Transm itter P SUFFIX PLASTIC DIP CASE 707 The M C 14497 is a PCM rem ote co n tro l tra n s m itte r re alized in CM OS technology. Using a dual-single FSK/AM frequency bi-phase modulation, the

t 608

Abstract: HM5113165LTD-6
Contextual Info: HM5113165LTD-6 128M EDO DRAM 8-Mword x 16-bit 4k refresh EO E0178H10 (Ver. 1.0) Jul. 12, 2001 Description L The HM5113165F L is 128M-bit dynamic R AM orga nized as 8, 388, 608-word × 16-bit. It has re alize d high per forma nce and low powe r by employing C MOS proc ess tec hnology. HM5113165F L off ers Extende d Da ta

100CL

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYRIG H T 3 R E L E A S E D FO R P U B LIC A T IO N A LL RIG HTS R ESER VED . D POINT OF M EASUREM EN T FO R PLATING LO C ALIZED PLATE A R EA 88976 C N IC K EL U N D E R P L A T E . 0 0 0 0 5 0 MIN TH K ON EN TIRE CONTACT

MS004

Contextual Info: MS004 .050” CENTER, LEA D LESS TYPE C PLANE 1 NOTE 10 h A2 - Ai NOTES 1. REFER TO APPLICABLE SYMBOL LIST. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5 1973. 3. MET ALIZED CASTELLATIONS CONNECTED TO PLANE 1 TERMINALS 4. RELIEF ON CORNER TERMNAL MAXMUM DIMENSION PERMISSIBLE.

Contextual Info: VIDEO EQU ALIZER NJM2258 NJM 2258 is the IC fu n ctio n in g the gain high pass correction, as well as for equalizing function o f wave d isto rtio n co rrectio n , generated by bright signal o f g ro u p delay feature like low band filter. It has internalizing R E C line, one

SC11016CV

Contextual Info: SC11016 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ □ □ All m od u lato rs, dem od u lators an d filters w ith co m p ro m ise equ alizers on chip Call p rog ress m od e, to n e gen ­ erators for D TM F, V .22 gu ard and calling tones Single 5 V p o w e r sup ply with