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IXYS Corporation IXFN80N50P MOSFET Modules 500V 66A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN80N50P		485			1 $42.87 10 $30.06 100 $30.06 1000 $30.06 10000 $30.06	Buy Now
TTI	IXFN80N50P	Tube			300	1 - 10 - 100 - 1000 $27.47 10000 $27.47	Buy Now
TME	IXFN80N50P				300	1 - 10 - 100 - 1000 $30.94 10000 $30.94	Get Quote
IXYS Corporation IXFK80N50P MOSFETs 500V 80A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFK80N50P		385			1 $28.60 10 $20.27 100 $18.03 1000 $18.03 10000 $18.03	Buy Now
TTI	IXFK80N50P	Tube			300	1 - 10 - 100 - 1000 $17.14 10000 $17.14	Buy Now
TME	IXFK80N50P		12		1	1 $18.12 10 $16.79 100 $16.79 1000 $16.79 10000 $16.79	Buy Now
IXYS Corporation IXFX80N50P MOSFETs 500V 80A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFX80N50P		168			1 $26.40 10 $20.58 100 $20.58 1000 $18.61 10000 $18.61	Buy Now
TTI	IXFX80N50P	Tube			300	1 - 10 - 100 - 1000 $17.52 10000 $17.52	Buy Now
TME	IXFX80N50P				1	1 $23.89 10 $19.97 100 $18.85 1000 $18.85 10000 $18.85	Get Quote
IXYS Corporation IXFR80N50P MOSFETs 500V 80A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFR80N50P					1 $30.25 10 $20.33 100 $20.33 1000 $20.33 10000 $20.33	Get Quote
TTI	IXFR80N50P	Tube			300	1 - 10 - 100 - 1000 $19.59 10000 $19.59	Buy Now
TME	IXFR80N50P				1	1 $23.37 10 $18.57 100 $17.70 1000 $17.70 10000 $17.70	Get Quote
Littelfuse Inc IXFX80N50P Discmosfetn-Ch Hiperfet-Polar To-247Ad/; \|Littelfuse IXFX80N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFX80N50P	Bulk			300	1 - 10 - 100 - 1000 $15.28 10000 $14.45	Buy Now
RS	IXFX80N50P	Bulk		8 Weeks	30	1 - 10 - 100 $26.96 1000 $26.96 10000 $26.96	Get Quote

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80N50P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80N50P Abstract: IXFK 80N50P PLUS247 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80n50p o-264 ixfk 80n50p plus247	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80n50p o-264 plus247	PDF
80n50 Abstract: 80N50P ISOPLUS247 4525 GE alize Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C	Original	isoplus247tm 80n50p 80n50 isoplus247 +24525 ge alize	PDF
80N50P Abstract: IXFN 80N50P E153432 Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50p ixfn 80n50p e153432	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80n50p	PDF
80N50 Abstract: 80N50P IXFN 80N50P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80n50p 80n50 ixfn 80n50p	PDF
80N50P Abstract: IXFK 80N50P 80N50 PLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM	Original	80n50p ixfk 80n50p 80n50 plus247	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	isoplus247tm 80n50p	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	80n50p	PDF
80N50P Abstract: ISOPLUS247 PLUS247 Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	isoplus247tm 80n50p isoplus247 e153432 +2405b2 plus247	PDF
Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50p ot-227 e153432 405b2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	o-220 isoplus220tm o-247 isoplus247tm +15o-264 isoplus264tm plus220 plus220smd o-252 stw20n60 2n60p ixfb100n50 ixfb100n50p stw20n60fd ixfb100n50p to-264 ixys ixfn100n50p ixfn48n60p ixfh30n60p ixfn100n50p	PDF

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80N50P Price and Stock

IXYS Corporation IXFN80N50P

IXYS Corporation IXFK80N50P

IXYS Corporation IXFX80N50P

IXYS Corporation IXFR80N50P

Littelfuse Inc IXFX80N50P

80N50P Datasheets Context Search

80N50P

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80N50P

80N50

80N50P

80N50P

7N60B equivalent

STW20N60