24N10 Search Results

24N10 Price and Stock

Filter by Manufacturer

Select Manufacturer


Infineon Technologies AG IAUC24N10S5L300ATMA1 MOSFET N-CH 100V 24A TDSON-8-33
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IAUC24N10S5L300ATMA1	Tape & Reel	4,950		5,000	1 - 10 - 100 - 1000 - 10000 $0.31	Buy Now
	IAUC24N10S5L300ATMA1	Cut Tape	4,950		1	1 $1.36 10 $0.86 100 $0.57 1000 $0.40 10000 $0.37	Buy Now
	IAUC24N10S5L300ATMA1	Digi-Reel	4,950		1	1 $1.36 10 $0.86 100 $0.57 1000 $0.40 10000 $0.37	Buy Now
Avnet Americas	IAUC24N10S5L300ATMA1	Tape & Reel		53 Weeks, 1 Days	5,000	1 - 10 - 100 - 1000 - 10000 $0.30	Buy Now
Mouser Electronics ()	IAUC24N10S5L300ATMA1		94			1 $1.82 10 $1.12 100 $0.74 1000 $0.50 10000 $0.40	Buy Now
	IAUC24N10S5L300ATMA1		94			1 $1.82 10 $1.12 100 $0.74 1000 $0.50 10000 $0.40	Buy Now
Newark ()	IAUC24N10S5L300ATMA1	Tape & Reel	5,532		100	1 - 10 - 100 $0.65 1000 $0.46 10000 $0.46	Buy Now
	IAUC24N10S5L300ATMA1	Cut Tape	5,532		1	1 $1.55 10 $0.98 100 $0.65 1000 $0.46 10000 $0.46	Buy Now
Rochester Electronics	IAUC24N10S5L300ATMA1		25,812		1	1 - 10 - 100 $0.38 1000 $0.32 10000 $0.28	Buy Now

TME	IAUC24N10S5L300ATMA1				5,000	1 - 10 - 100 - 1000 - 10000 $0.36	Get Quote
Win Source Electronics	IAUC24N10S5L300ATMA1		50,529			1 - 10 - 100 $0.80 1000 $0.53 10000 $0.53	Buy Now
Infineon Technologies AG IPF024N10NF2SATMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IPF024N10NF2SATMA1	Cut Tape	1,293		1	1 $4.02 10 $2.63 100 $1.84 1000 $1.84 10000 $1.84	Buy Now
	IPF024N10NF2SATMA1	Digi-Reel	1,293		1	1 $4.02 10 $2.63 100 $1.84 1000 $1.84 10000 $1.84	Buy Now
	IPF024N10NF2SATMA1	Tape & Reel	1,293		800	1 - 10 - 100 - 1000 $1.43 10000 $1.24	Buy Now
Mouser Electronics	IPF024N10NF2SATMA1		1,057			1 $4.13 10 $2.70 100 $1.96 1000 $1.70 10000 $1.44	Buy Now
Rochester Electronics	IPF024N10NF2SATMA1		9,398		1	1 - 10 - 100 $1.24 1000 $1.11 10000 $1.05	Buy Now
TME	IPF024N10NF2SATMA1				800	1 - 10 - 100 - 1000 $1.76 10000 $1.76	Get Quote
EBV Elektronik	IPF024N10NF2SATMA1			27 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
KORATECH 024N1000B07551010N0001 24N1000mm1.0P(5/5/10/10)P7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	024N1000B07551010N0001	Bulk	500		10	1 - 10 $20.00 100 $5.00 1000 $0.70 10000 $0.70	Buy Now
JRH ELECTRONICS MS17344R24N10S PLUG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MS17344R24N10S	Bulk	57		1	1 $4312.77 10 $4312.77 100 $4226.52 1000 $4059.15 10000 $3977.96	Buy Now
JRH ELECTRONICS MS17348R24N10S RECEPT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MS17348R24N10S	Bulk	57		1	1 $5518.91 10 $5518.91 100 $5408.53 1000 $5194.35 10000 $5090.47	Buy Now

Find more 24N10 price and stock on Findchips.com

24N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
24N100 Abstract: 23N10 125OC Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC	PDF
transistor da 307 Abstract: 24N10 Contextual Info: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet RDSon = 390 mW in High Voltage ISOPLUS I4-PACTM 1 5 Features MOSFETs Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C	Original	24N100 24N100 transistor da 307 24N10	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000	Original	24N100 24N100 247TM O-264	PDF
Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC	PDF
Contextual Info: Advanced Technical Information IXFN 24N100 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 1000 V = 24 A = 0.39 W trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000	Original	24N100 OT-227 E153432	PDF
Contextual Info: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C	Original	24N100	PDF
z 607 ma Contextual Info: IXFK 24N100 IXFX 24N100 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000 1000	Original	24N100 24N100 247TM O-264 z 607 ma	PDF
Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC	PDF
24N100 Abstract: 24N10 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C	Original	24N100 ISOPLUS247TM 24N10	PDF
24N10 Contextual Info: AdvancedTechnical Information 24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C	OCR Scan	IXFK24N100 24N100 to150 24N10	PDF
24N100 Abstract: "SOT-227 B" dimensions 125OC Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC "SOT-227 B" dimensions 125OC	PDF
24N100 Abstract: 23N100 Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	24N100 23N100 227TM	PDF
Contextual Info: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet Ω RDSon = 390 mΩ in High Voltage ISOPLUS i4-PACTM 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C	Original	24N100 24N100	PDF
24n100f Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS on = 0.39 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr	Original	24N100F 247TM 728B1	PDF

Contextual Info: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFR 24N100 V¥ ISOPLUS247™ ^D25 = 1000 V 22 A = _ 0.39 ß DS on “ “ dss P (Electrically Isolated Back Surface) trr <250 ns Single MOSFET Die Symbol Test Conditions v Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 M£2	OCR Scan	24N100 ISOPLUS247TM Cto150 00A/tis, 247TM	PDF
Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC	PDF
24N100F Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs IXFN 24N100F VDSS ID25 F-Class: MegaHertz Switching RDS on D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	24N100F OT-227 E153432 728B1 24N100F	PDF
Contextual Info: □ I X Y Advanced Technical Information S IXFK 24N100 IXFX 24N100 HiPerFET Power MOSFETs V,DSS Single MOSFET Die ttS Maximum Ratings Test Conditions V DSS v DGR Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS = 1 Mß VGS V GSM Continuous Transient ^D25	OCR Scan	24N100 PLUS247â	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ID25 = 22 A ISOPLUS247TM Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	24N100 ISOPLUS247TM 247TM	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS = 1000 V ID25 = 22 A RDS on = 0.39 Ω ≤ 250 ns trr IXFR 24N100 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS247TM 24N100 247TM	PDF
Contextual Info: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM (IXTX) 1000 1000 V V ±20 ±30 V V G	Original	24N100 247TM IXFK24N100/IXFX24N100 405B2	PDF
ixfk24n100 Contextual Info: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die = 1000 V = 24 A = 0.40 Ω RDS on trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM	Original	24N100 247TM IXFK24N100/IXFX24N100 405B2 ixfk24n100	PDF
24N100 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM ID25 = 22 A Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	24N100 ISOPLUS247TM 247TM	PDF
1522s Abstract: D 819 mss1000 Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR 24N100 V,DSS = 1000 V = 22 A ISOPLUS247™ ^D25 Electrically Isolated Back Surface ^ D S (o n )= 0.39 Q trr < 250 ns Single MOSFET Die ÛB: Maximum Ratings Symbol Test Conditions V Tj = 25°C to 150°C	OCR Scan	24N100 ISOPLUS247â T0-247AD 1522s D 819 mss1000	PDF

24N10 Search Results

24N10 Price and Stock

Infineon Technologies AG IAUC24N10S5L300ATMA1

Infineon Technologies AG IPF024N10NF2SATMA1

KORATECH 024N1000B07551010N0001

JRH ELECTRONICS MS17344R24N10S

JRH ELECTRONICS MS17348R24N10S

24N10 Datasheets Context Search

24N100

transistor da 307

z 607 ma

24N100

24N10

24N100

24N100

24n100f

24N100F

ixfk24n100

24N100

1522s