2SJ39 Search Results

Hitachi 2SJ

Abstract: Hitachi DSA00279
Contextual Info: 2SJ399 Silicon P-Channel MOS FET ADE-208-267 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch.

Contextual Info: 2SJ399 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power switching Features • Low on-resistance • Small package • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for low signal load switch.

2SJ399

Abstract: Hitachi 2SJ Hitachi DSA00389
Contextual Info: 2SJ399 Silicon P-Channel MOS FET ADE-208-267 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch.

2SJ399

Contextual Info: 2SJ399 Silicon P-Channel MOS FET REJ03G0193-0200Z Previous ADE-208-267 (Z ) Rev.2.00 Apr.05.2004 Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source

2SJ390

Contextual Info: 2SJ390 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

t04 FET

Contextual Info: 2SJ399 Silicon P-Channel MOS FET HITACHI Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline

2sj28

Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40

Hitachi DSA002714

Contextual Info: 2SJ399 Silicon P-Channel MOS FET November 1996 Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch.

Contextual Info: 2SJ390 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

2SJ399

Abstract: Hitachi 2SJ DSA003641
Contextual Info: 2SJ399 Silicon P-Channel MOS FET ADE-208-267 Z 1st. Edition Mar. 2001 Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch.

2SJ399

Contextual Info: 2SJ399 Silicon P Channel MOS FET Application MPAK Low frequency power switching 3 1 Features 2 • • • • Low on–resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for low signal load switch.

1060 fet

Abstract: 2SJ390
Contextual Info: 2SJ390 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC

Hitachi 2SJ

Abstract: Hitachi DSA001651
Contextual Info: 2SJ390 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SJ18

Abstract: 2SJ56 2sk176 2SK60 2SK151 2SJ51 2SJ20 2SJ49 2sk134 2M150S-050 2SJ56 2sk133 2Sj48
Contextual Info: - 14 - II f i: tt € ÌÈ. € tft it K i'/i\ -9, U PS 2MI50F-050 2MI50S-050 Ä i Ä * 2N4392 NEC 2N4393 NEC X fë £ V * ft* (V) P d/P c h (A) ft * (W) Ig s s (max) (A) (min) (A) Vg s (V) Vd s (V) Id (A) ±20 S 50 D 400 ± lOOn ±20 lm 500 2.1 4 V GS

Contextual Info: 2 S J3 90 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC

Contextual Info: 2 S J3 99 Silicon P C h a n n e l M O S F E T Application Low frequency power switching Features • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for low signal load switch.

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List