2N2147 TRANSISTOR Search Results

2N2147 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)	PDF

2N2147 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2832 Abstract: 2N2833 2N2834 MP1612B 2n2526 Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 GERMANIUM POWER TRANSISTORS Typ* Himbfr Mia, Dtmtt JtoC we ABSOLUTE MAX. RATINGS Ic A I. A BVefa V 6V,*, V BK . V Mat. la. 9 Mm. va M°C A YC,	Original	200ft 2N2832 2N2833 2N2834 MP1612B 2n2526	PDF
2N2147 Abstract: 2N2160 2N1756 2N2217 2N1305 2N1307 2N1308 Application of 2n1304 PNP 2N2923 2N1303 Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter	OCR Scan	2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 25/iA 2N2217 2N2147 2N2160 2N1756 2N1305 2N1307 2N1308 Application of 2n1304 PNP 2N2923 2N1303	PDF
2N2147 Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308 Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter	OCR Scan	2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 360mW 120mcf2) 2N2147 fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308	PDF

Catalog Datasheet

Type

Document Tags

PDF

2N2832

Abstract: 2N2833 2N2834 MP1612B 2n2526
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 GERMANIUM POWER TRANSISTORS Typ* Himbfr Mia, Dtmtt JtoC we ABSOLUTE MAX. RATINGS Ic A I. A BVefa V 6V,*, V BK . V Mat. la. 9 Mm. va M°C A YC,

Original

200ft 2N2832 2N2833 2N2834 MP1612B 2n2526

PDF

2N2147

Abstract: 2N2160 2N1756 2N2217 2N1305 2N1307 2N1308 Application of 2n1304 PNP 2N2923 2N1303
Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter

OCR Scan

2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 25/iA 2N2217 2N2147 2N2160 2N1756 2N1305 2N1307 2N1308 Application of 2n1304 PNP 2N2923 2N1303

PDF

2N2147

Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308
Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter

OCR Scan

2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 360mW 120mcf2) 2N2147 fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308

PDF