RCA POWER TRANSISTORS Search Results

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

2N4933

Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
Contextual Info: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International

Contextual Info: HARRIS SEMICOND SECTOR 57E I> • 4302271 G G 2 G 4 eì2 ^ ■ HAS Power T ran sisto RCA 1000, RCA1001 File Number 594 T-33'-2cC 8-A m pere Silicon N -P -N Darlington Pow er Transistors

transistor tl 188

Abstract: 92CS-27516
Contextual Info: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor

Contextual Info: HARRIS SEMICOND SECTOR 4DE D B 4302271 GÜ33747 FRK9460D OBJECTIVE HARRIS • RCA • BE • 4 •HAS 10A, -500V RDS on =1,20n INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power MOSFET TO-204AE

723ct

Abstract: A723E CI CA723 CA723CE CA723 harris intersil
Contextual Info: Power Control Circuits HARRIS S E M I C O N D U C T O R HARRIS RCA - GE CA723, CA723C INTERSIL May 1990 Voltage Regulators For Regulated Output Voltage Adjustable from 2 V to 37 V at Output Currents up to 150 mA without External Pass Transistors Features:

C04-013

Abstract: 74ls10 IC CMOS 4000B series rca 74 HC Series ICs C04013
Contextual Info: Application Notes Power Consumption in QMOS Logic Circuits by R. Funk and B. Heinze QMOS, RCA’s high-speed CMOS-logic technology, offers users the best features of both CMOS and TTL tech nolog ies: the low-power consumption of CMOS and the fast speeds associated with LSTTL. This Application Note focuses on

BDY58R

Abstract: RCA-BDY58R
Contextual Info: BDY58R File Number Silicon N-P-N Switching Transistors 1206 TERM INAL DESIGNATIONS c E FLANGE! For Switching Applications in Industrial and Commercial Equipment Features: • VCE0 - 160V • lc — 25 A ■ P T — 175 W JEDEC TO-204AA The RCA-BDY58R is a silicon n-p-n power transistor featur­

CA3102E

Abstract: CA3049T RCA CA3049T ca3049
Contextual Info: D ifferential Am plifiers HARRIS S E M I C O N D U C T O R HARRIS RCA GE - CA3049, CA3102 INTERSIL May 1990 Dual High-Frequency Differential Amplifiers For Low-Power Applications at Frequencies up to 5 0 0 MHz Features: Applications: • Power Gain 23 dB typ. at 200 MHz

RCA-40967

Abstract: 40967 40968 ATC100 596 transistor 2575A rca 832
Contextual Info: File No. 596 RF Pow er T ra n sis to rs 40967 40968 Solid State Division 2 -W and 6 -W 4 7 0 - MHz Silicon N -P -N Overlay Transistors For UHF Amplifier Service T - Features-. • A ll devices tested at in fin ite VSWR w ith rated power inpu t RCA H F -44 PA C K AG E

IRF640R

Abstract: IRF641R free energy transis Harris MOSFET N-CHANNEL nh
Contextual Info: HARRIS SEMICOND SECTOR IbE D • H3DSS71 D01S4Ö2 3 ■ fSi HARRIS Power MOSFETs S E M I C O N D U C T O R HARRI S RCA GE T-3^/3 I NTERSI L IRF640R, IRF641R IRF642R, IRF643R Avalanche Energy Rated N-Channel Power MOSFETs 16A and 18A, 200V, 150V rDs on = 0 .1 8 0 and 0.22fi

2N3839

Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
Contextual Info: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the

equivalent M 393

Contextual Info: HARRIS V p 11 SEMCONt SECTOR 4DE D m 2N7285R, 2N7285H HARRIS S E M I C O N D U C T O R RCA H AR RIS GE MB02271 DD337b2 0 EiHAS REGISTRATION PENDING Available As FRM240R, FRM240H IN T E R S IL 3 16A,200V RDS(on =0.24n Radiation-Hardened N-Channel Power MOSFETs

Rad hard MOSFETS in Harris

Contextual Info: HARRIS 1 a H A R R IS 1 SEIHCOND SECTOR H A R R IS GE D I 4305571 0033744 OBJECTIVE S E M I C O N D U C T O R RCA MDE TBHAS FRF9450D 5 A ,-5 0 0 V RDS on =1,82 a IN T E R SIL This Objective Data Sheet Represents the Proposed Device Performance, Radiation-Hardened P-Channel Power MOSFETs

Contextual Info: H A R R I S SEfllCOND S E C T O R £ *? H A R R I S U U HARRIS RCA GE MOE D • 4 3 0 2 27 1 0 0 3 3 7 3 a 3 B HAS OBJECTIVE FRS9440D - H " '! RDS on =4.22n 2 .5 A .-S 0 0 V INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power M O SFETs

2n3553

Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
Contextual Info: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in

ca3055

Abstract: CA3085BS CA3085 ca308s CA3085 diagram equivalent transistor c 243
Contextual Info: Power Control Circuits f f H A R R IS S E M H A R R IS I C RCA O N D GE U • C T O R CA 30 85 , CA 3085A , C A 3085B IN T E R S IL May 1990 Positive Voltage Regulators F e a tu re s: A p p lic a tio n s: • Up to 100 mA output current • Input and output short-circuit protection

rca 2n3375

Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Contextual Info: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)

philco transistors

Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
Contextual Info: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

RCA 2N3055 transistor

Abstract: 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
Contextual Info: APPLICATION INFORMATION . Power Types for Electrostatic Deflection and Video Output Power Types [N-P-N & P-N-P] as Pass Transistors for Series Regulator Service Peak Output Voi tage V Pass Transistor Conditions 10 to 60 Bandwidth > 1MHz Regulator Output Current (1 ) — A

12n08

Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
Contextual Info: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

RCA9229D

Abstract: RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C
Contextual Info: 3875081 G E SOLID SfÄTE 01E 17323 D Darlington Power Transistors File Number 1448 RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A C om plem entary High Current,