AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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2n6259
Abstract: 2n4348
Contextual Info: POWER TRANSISTORS PT TYPE NO. TO-3 MAXIMUM RATINGS Ic 25*C BVcbo BVceo BVebo A V V V Watts hrE @ <5 MIN MAX Ic A VCE V Sat Test Voltages Conditions Ib VcE Vbe Ic I ebo V A V A ma 2N3773 150 160 140 7 16 15 60 8 4 1.4 2.2 8 .8 5 2N4348 120 140 120 7 10 15 60
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2n37732n43482n6259twx-510-224-6582+3t0-58o-11400435c
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1N4785
Abstract: 2N5155 2N2526 2N3731 2N2147 2N2832 MP1612 2N3732 2N2148 2N2527
Contextual Info: GERMANIUM POWER TRANSISTORS Type N um ber M in. Derate J to C W /° C A B S O L U T E M A X . R A T IN G S Ic A I» A f>Kao V B V cto V B V cco V M ax. I cbo @ Max. Vco @ 25 °C A Ah Bias Va V Ic A Min. M ax. f Hz M ax. Sat. Res. Q M ax. Pc Free A ir 9 2S°C
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mp1612mp1612amp1612bmp1613+132n21472n2148500fjr-33hmt-27mt-281n47852n51552n25262n37312n28322n37322n2527
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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2N4346
Abstract: 2N4348 2N6259 2n6259 lf TIC 440 2N3773
Contextual Info: POWER TRANSISTORS PT TYPE NO. TO-3 MAXIMUM RATINGS @ 25*C BV cbo BV ceo BV ebo V V V Watts <5ä> Ic VCE V A hrE Ic A MIN MAX Sat Voltages Test Conditions VcE V V be V Ic Ib Ie b o A A ma 2N3773 150 160 140 7 16 15 60 8 4 1.4 2.2 8 .8 5 2N4348 120 140 120 7
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2n37732n43482n6259twx-510-224-6582+6ioh151-o-114-24uhf2n43462n6259 lftic 440
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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ad143
Abstract: ASZ15 ASZ18 AUY37 ASZ16 GT906AM AUY35 AU113 ASZ17 AUY22A
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 20 30 35 40 45 50 60 65 70 -75 80 - 85 90 Min See Index Germanium NthAmerSemi NthAmerSemi CentralSemi NthAmerSemi Germanium See Index See Index Germanium Max .(Hz) ~Y.D~a ~ml 75 250 60 22 25 25 25 32 32
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2n5900mp3730aady25ad159+12ad138asz17asz18ctp1306ad143asz15auy37asz16gt906amauy35au113auy22a
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2N2832
Abstract: 2N2833 2N2834 MP1612B 2n2526
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 GERMANIUM POWER TRANSISTORS Typ* Himbfr Mia, Dtmtt JtoC we ABSOLUTE MAX. RATINGS Ic A I. A BVefa V 6V,*, V BK . V Mat. la. 9 Mm. va M°C A YC,
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200ft2n28322n28332n2834+2mp1612b2n2526
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1N4785
Abstract: 2N2147 MP1612B 2N2526 2N2148 2N2832 2N3731 Germanium Power Devices 2n2834 2N3730 2N5435
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Min. Derate JtoC W/°C ABSOL UTE MAX. RA TINGS Ic A b A BVcbo V BVC, „ V BVceo V Max. Icbo @ Max. V co @ 2S°C A hfc V„ V Bias Ic A Min. Max. Hl Max. Sat. Res. 2 Max. Pc Free Air @ 2S°C W .03 .03 .03 85 85 85
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mp1612mp1612amp1612bmp1613+132n21472n21482n1905150t-368-32nc-2ans2571n47852n25262n28322n3731germanium power devices 2n28342n37302n5435
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2n3054
Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include
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edi358ta7557ta7611ta7612+15ta7639ta7640ta7719ta7739ta7740ta77412n3054rca transistor 40410rca 403102n2870rca 40636 transistortransistor 404102n23382n24052n2147
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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con-46o-10414-lead16-lead+1212-leado-220ab1n5411npn transistor rca 467cd4004tca3051cd4001d40468arca 4082240664 scrrca 405832n5756
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