20N60BD1 Search Results
20N60BD1 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20N60BD1 | IXYS | Hiperfast(tm) Igbt | Original | 54.09KB | 2 |
20N60BD1 Price and Stock
IXYS Corporation IXGT20N 60BD1IGBTs 40 Amps 600 V 2.0 V Rds |
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IXGT20N 60BD1 |
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20N60BD1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
20N60BD1Contextual Info: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES |
Original |
20n60bd1o-268o-247 | |
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Contextual Info: □IXYS HiPerFAST IGBT with Diode V CES IXGT 20N60BD1 ^C25 V CE sat typ ^fi(typ) = 600 V 40 A = 1.7 V 100 ns ” Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 600 |
OCR Scan |
20n60bd1o-247ad | |
ph-15 diodeContextual Info: Advanced Technical Information HiPerFAST IGBT with Diode IXGH IXGT 20N60BD1 20N60BD1 V CES ^C25 VCE sat typ t’fi(typ) Combi Pack Symbol Test Conditions Maximum Ratings T j = 25° C to 150" C 600 V Tj = 25' C to 150 C; RGf = 1 M li 600 V Continuous ±20 |
OCR Scan |
20n60bd1o-268o-247adph-15 diode | |
30N120D1
Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
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OCR Scan |
o-26835-06c40-06dot-227b+12 | |
20N60BD1Contextual Info: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES |
Original |
20n60bd1o-268 | |
120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
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OCR Scan |
o-220o-263o-24728n30+16 | |
200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
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Original |
plus24720n3028n3030n30+15 | |
7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
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Original |
axc-051axc-053axc-101axc-102+16 | |
IXBH 40N160
Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
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OCR Scan |
20n60b35n60b20n120a20n120+12 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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Original |
ms-01310-pin5m-1994mo-229+10 | |
12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
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Original |
o-220o-263o-247plus247+15 | |
DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
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OCR Scan |
axc-051axc-051-raxc-102axv-002+16 |