40N120 Search Results

40N120 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TRS40N120HB		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, 2 in 1, TO-247	Datasheet
TW140N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 20 A, 0.182 Ω@18 V, TO-247	Datasheet

40N120 Price and Stock

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Littelfuse Inc IXYH40N120B3D1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXYH40N120B3D1		300			1 - 10 - 100 $8.12 1000 $6.94 10000 $6.90	Buy Now
RS	IXYH40N120B3D1	Bulk		8 Weeks	30	1 - 10 - 100 $11.80 1000 $10.86 10000 $10.86	Get Quote
onsemi NTH4L040N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC 40 mohm 1200 V M1 TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC 40 mohm 1200 V M1 TO-247-4L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	NTH4L040N120SC1					1 - 10 - 100 - 1000 $12.76 10000 $12.76	Buy Now
Avnet Americas ()	NTH4L040N120SC1	Bulk			1	1 $16.52 10 $12.67 100 $11.91 1000 $11.66 10000 $11.66	Get Quote
	NTH4L040N120SC1	Tube		53 Weeks	450	1 - 10 - 100 - 1000 $12.87 10000 $12.40	Get Quote
Newark ()	NTH4L040N120SC1	Bulk	450		1	1 $16.52 10 $12.67 100 $11.91 1000 $11.66 10000 $11.66	Buy Now
	NTH4L040N120SC1	Bulk	348		1	1 $24.42 10 $22.48 100 $20.03 1000 $19.62 10000 $19.62	Buy Now
Rochester Electronics	NTH4L040N120SC1		2,725		1	1 - 10 - 100 $12.86 1000 $11.51 10000 $10.83	Buy Now
Avnet Asia	NTH4L040N120SC1			53 Weeks	450	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	NTH4L040N120SC1			50 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NTH4L040N120SC1		660	51 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi NTC040N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC 40 mohm 1200 V M1 Die Silicon Carbide (SiC) MOSFET - EliteSiC 40 mohm 1200 V M1 Die
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	NTC040N120SC1					1 - 10 $14.42 100 $12.23 1000 $11.78 10000 $11.78	Buy Now
Richardson RFPD	NTC040N120SC1				52	1 - 10 - 100 - 1000 - 10000 -	Get Quote
IDEC Corporation SLC40N-1202-DHT2FB DISPLAY LIGHT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	SLC40N-1202-DHT2FB					1 $1171.17 10 $1121.52 100 $1121.52 1000 $1121.52 10000 $1121.52	Buy Now
Sager	SLC40N-1202-DHT2FB				1	1 $1276.59 10 $1276.59 100 $1276.59 1000 $1276.59 10000 $1276.59	Buy Now
IDEC Corporation SLC40N-1203-DHT2FB DISPLAY LIGHT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	SLC40N-1203-DHT2FB					1 $1732.72 10 $1642.71 100 $1642.71 1000 $1642.71 10000 $1642.71	Buy Now
Sager	SLC40N-1203-DHT2FB					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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40N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
40N120 Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623 Contextual Info: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	40n120 o-247 ixrh 50n120 40n120 datasheet +450n120 bi-directional switches igbt induction heating d-68623	PDF
IXGX40N120BD1 Abstract: max3037 2040q Contextual Info: Advanced Technical Information High Voltage IGBT with Diode IXGX 40N120BD1 VCES IC25 VCE sat = 1200 = 75 = 3.3 = 250 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	40n120bd1 ic110 if110 plus247 +4405b2 ixgx40n120bd1 max3037 2040q	PDF
BSC 27 flyback Abstract: induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic Contextual Info: IXEH 40N120B2D4 Advanced Technical Information IC25 = 65 A = 1200 V VCES VCE sat typ = 2.4 V SPT IGBT High Frequency Applications: • induction heating • flyback converters • resonant-mode power supplies C TO-247 AD G E G C E C (TAB) Features IGBT Conditions	Original	40n120b2d4 o-247 bsc 27 flyback induction heating circuits +3ixeh40n120b2d4 igbt for induction heating igbt for induction heating ic	PDF
40N120A Abstract: IXGT 40N120A2 a 3150 40n120 40N120A2 Contextual Info: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200	Original	40n120a2 ic110 o-247 40n120a +3ixgt 40n120a2 a 3150 40n120	PDF
40N120 Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623 Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C	Original	40n120 40n120d1 o-247 40n120d +240n120 datasheet d-68623	PDF
40N120 Abstract: 40N120 DATASHEET D-68623 IXRH40N120 Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES	Original	40n120 o-247 ixrh40n120 40n120 datasheet +1d-68623	PDF
40N120 Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	40n120 40n120d1 o-247 40n120 datasheet +4160mj d-68623 ns6002 40n120d	PDF
Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES	Original	40n120 o-247 ixrh40n120	PDF
40n120 Abstract: 40N120D1 40N120 DATASHEET 40n120 igbt D-68623 40n120d Contextual Info: Advanced Technical Information NPT3 IGBT IC25 IXEH 40N120 IXEH 40N120D1 VCES with optional diode VCE sat typ. = 60 A = 1200 V = 2.4 V TO-247 AD G C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	40n120 40n120d1 o-247 40n120 datasheet +340n120 igbt d-68623 40n120d	PDF
40n120 Abstract: 40N120D1 Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	40n120 40n120d1 o-247	PDF
40N120 Contextual Info: IXRH 40N120 Advanced Technical Information VCES = ±1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	40n120 o-247	PDF
Contextual Info: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200	Original	40n120a2 ic110	PDF
Contextual Info: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	ngtb40n120ihrwg ngtb40n120ihr/d	PDF
40n120 Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120 Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	ngtb40n120flwg ngtb40n120flw/d 40n120 40n120fl +2mc 140 transistor ngtb40n120	PDF

Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	ngtb40n120flwg ngtb40n120flw/d	PDF
40N120IHR Contextual Info: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	ngtb40n120ihrwg ngtb40n120ihr/d 40n120ihr	PDF
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	ngtb40n120fl2wg ngtb40n120fl2w/d	PDF
Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	ngtb40n120flwg ngtb40n120flw/d	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	ngtb40n120fl2wg ngtb40n120fl2w/d	PDF
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	o-268 35-06c 40-06d ot-227b +1250-12e 50-12bd 30n120d1 55n120d1 35n60bd1 30n120d 35n60b transistor c90 40n120d1 20n120d1 60n120 20n60bd1	PDF
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	ngtb40n120fl2wg ngtb40n120fl2w/d	PDF
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	ngtb40n120fl2wg ngtb40n120fl2w/d	PDF
NGTB40N120LWG Abstract: 40N120L Contextual Info: 40N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is	Original	ngtb40n120lwg ngtb40n120l/d 40n120l	PDF

40N120 Search Results

40N120 Result Highlights (2)

40N120 Price and Stock

Littelfuse Inc IXYH40N120B3D1

onsemi NTH4L040N120SC1

onsemi NTC040N120SC1

IDEC Corporation SLC40N-1202-DHT2FB

IDEC Corporation SLC40N-1203-DHT2FB

40N120 Datasheets Context Search

40N120

IXGX40N120BD1

BSC 27 flyback

40N120A

40N120

40N120

40N120

40n120

40n120

40N120

40n120

40N120IHR

7N60B equivalent

30N120D1

NGTB40N120LWG