40N120 Search Results
40N120 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TW140N120C |
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N-ch SiC MOSFET, 1200 V, 20 A, 0.182 Ω@18 V, TO-247 | Datasheet | ||
TRS40N120HB |
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SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, 2 in 1, TO-247 | Datasheet |
40N120 Price and Stock
Infineon Technologies AG IKW40N120H3FKSA1IGBT TRENCH FS 1200V 80A TO247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKW40N120H3FKSA1 | Tube | 3,797 | 1 |
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IKW40N120H3FKSA1 | Bulk | 1 |
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IKW40N120H3FKSA1 | 749 |
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IKW40N120H3FKSA1 | Tube | 2,140 | 0 Weeks, 1 Days | 1 |
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IKW40N120H3FKSA1 | 65,970 |
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IKW40N120H3FKSA1 | 8,640 | 20 Weeks | 240 |
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IKW40N120H3FKSA1 | 4,600 | 1 |
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IKW40N120H3FKSA1 | 50,180 |
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onsemi NVBG040N120SC1TRANS SJT N-CH 1200V 60A D2PAK-7 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVBG040N120SC1 | Cut Tape | 2,871 | 1 |
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NVBG040N120SC1 | 1 |
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NVBG040N120SC1 | 800 |
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NVBG040N120SC1 | 2,400 |
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NVBG040N120SC1 | 7 Weeks | 800 |
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NVBG040N120SC1 | 2,854 |
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NVBG040N120SC1 | 1,354 |
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NVBG040N120SC1 | 596 | 1 |
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Micro Commercial Components MIW40N120FLA-BPIGBT TRENCH FS 1200V 80A TO247AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MIW40N120FLA-BP | Tube | 1,656 | 1 |
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Infineon Technologies AG IKW40N120CH7XKSA1IGBT TRENCH FS 1200V 82A TO247-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKW40N120CH7XKSA1 | Tube | 1,579 | 1 |
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IKW40N120CH7XKSA1 | Tube | 19 Weeks | 240 |
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IKW40N120CH7XKSA1 | 759 |
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IKW40N120CH7XKSA1 | Tube | 234 | 0 Weeks, 1 Days | 1 |
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IKW40N120CH7XKSA1 | 20 Weeks | 240 |
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onsemi NTHL040N120M3SSIC MOS TO247-3L 40MOHM 1200V M3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTHL040N120M3S | Tube | 1,062 | 1 |
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NTHL040N120M3S | 901 |
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NTHL040N120M3S | Bulk | 140 | 1 |
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NTHL040N120M3S | 900 | 1 |
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NTHL040N120M3S | 206,833 |
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NTHL040N120M3S | 6 Weeks | 450 |
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NTHL040N120M3S | 5,850 | 8 Weeks | 30 |
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NTHL040N120M3S | 131,850 |
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NTHL040N120M3S | 4,680 | 1 |
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40N120 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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40N120
Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
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40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623 | |
IXGX40N120BD1
Abstract: max3037 2040q
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40N120BD1 IC110 IF110 PLUS247 405B2 IXGX40N120BD1 max3037 2040q | |
BSC 27 flyback
Abstract: induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic
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40N120B2D4 O-247 BSC 27 flyback induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic | |
40N120A
Abstract: IXGT 40N120A2 a 3150 40n120 40N120A2
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40N120A2 IC110 O-247 40N120A IXGT 40N120A2 a 3150 40n120 40N120A2 | |
40N120
Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623
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40N120 40N120D1 O-247 40N120 40n120d 40N120D1 40N120 DATASHEET D-68623 | |
40N120
Abstract: 40N120 DATASHEET D-68623 IXRH40N120
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40N120 O-247 IXRH40N120 40N120 40N120 DATASHEET D-68623 IXRH40N120 | |
40N120
Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d
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40N120 40N120D1 O-247 40N120 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d | |
Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES |
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40N120 O-247 IXRH40N120 | |
40n120
Abstract: 40N120D1 40N120 DATASHEET 40n120 igbt D-68623 40n120d
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40N120 40N120D1 O-247 40N120D1 40n120 40N120 DATASHEET 40n120 igbt D-68623 40n120d | |
40n120
Abstract: 40N120D1
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40N120 40N120D1 O-247 40N120 40N120D1 | |
40N120Contextual Info: IXRH 40N120 Advanced Technical Information VCES = ±1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings |
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40N120 O-247 40N120 | |
Contextual Info: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200 |
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40N120A2 IC110 | |
Contextual Info: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering |
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NGTB40N120IHRWG NGTB40N120IHR/D | |
40n120
Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120
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NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120 | |
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Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is |
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NGTB40N120FLWG NGTB40N120FLW/D | |
40N120IHRContextual Info: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering |
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NGTB40N120IHRWG NGTB40N120IHR/D 40N120IHR | |
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
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NGTB40N120FL2WG NGTB40N120FL2W/D | |
Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is |
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NGTB40N120FLWG NGTB40N120FLW/D | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 | |
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
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NGTB40N120FL2WG NGTB40N120FL2W/D | |
30N120D1
Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
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OCR Scan |
O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 | |
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
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NGTB40N120FL2WG NGTB40N120FL2W/D | |
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
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NGTB40N120FL2WG NGTB40N120FL2W/D | |
NGTB40N120LWG
Abstract: 40N120L
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NGTB40N120LWG NGTB40N120L/D 40N120L |