Datasheet Archive: 60N120 datasheets

60N120 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TW060N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 36 A, 0.078 Ω@18 V, TO-247	Datasheet

60N120 Price and Stock

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onsemi NVH4L160N120SC1 Silicon Carbide (SiC) MOSFET N‐Channel - EliteSiC 160 mohm 1200 V M1 TO247−4L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	NVH4L160N120SC1					1 - 10 - 100 - 1000 $6.53 10000 $6.53	Buy Now
Avnet Americas ()	NVH4L160N120SC1	Tube			450	1 - 10 - 100 - 1000 $4.58 10000 $4.35	Get Quote
	NVH4L160N120SC1	Tube		53 Weeks	450	1 - 10 - 100 - 1000 $6.59 10000 $6.35	Get Quote
Newark	NVH4L160N120SC1	Bulk	406		1	1 $15.12 10 $9.64 100 $9.06 1000 $8.68 10000 $8.68	Buy Now
Rochester Electronics	NVH4L160N120SC1		38,340		1	1 - 10 - 100 $6.59 1000 $5.90 10000 $5.55	Buy Now
TME	NVH4L160N120SC1				1	1 $13.23 10 $10.93 100 $10.93 1000 $10.93 10000 $10.93	Get Quote

EBV Elektronik	NVH4L160N120SC1			53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	NVH4L160N120SC1		900			1 $3.48 10 $3.48 100 $3.48 1000 $3.48 10000 $3.48	Get Quote
onsemi NVHL160N120SC1 Silicon Carbide (SiC) MOSFET N‐Channel - EliteSiC 160 mΩ 1200 V M1 TO247−3L Silicon Carbide MOSFET N?Channel 1200 V 160 m? TO247?3L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	NVHL160N120SC1					1 - 10 - 100 - 1000 $6.21 10000 $6.21	Buy Now
Avnet Americas	NVHL160N120SC1	Tube		40 Weeks	450	1 - 10 - 100 - 1000 $6.27 10000 $6.04	Buy Now
Newark	NVHL160N120SC1	Bulk	886		1	1 $14.54 10 $13.02 100 $9.43 1000 $8.79 10000 $8.79	Buy Now
Rochester Electronics	NVHL160N120SC1		450		1	1 - 10 - 100 $6.26 1000 $5.60 10000 $5.27	Buy Now
TME	NVHL160N120SC1				1	1 $12.66 10 $9.00 100 $8.58 1000 $8.58 10000 $8.58	Get Quote

Avnet Silica	NVHL160N120SC1			15 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NVHL160N120SC1			16 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NTH4L160N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC 160 mohm 1200 V M1 TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC 160 mohm 1200 V M1 TO-247-4L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	NTH4L160N120SC1					1 - 10 - 100 - 1000 $4.38 10000 $4.38	Buy Now
Avnet Americas ()	NTH4L160N120SC1	Bulk			1	1 $6.60 10 $4.62 100 $4.42 1000 $4.26 10000 $4.26	Get Quote
	NTH4L160N120SC1	Tube		51 Weeks	450	1 - 10 - 100 - 1000 $4.42 10000 $4.26	Buy Now
Rochester Electronics	NTH4L160N120SC1		66		1	1 - 10 - 100 $4.43 1000 $3.96 10000 $3.73	Buy Now
TME	NTH4L160N120SC1				1	1 $7.11 10 $5.74 100 $5.17 1000 $5.17 10000 $5.17	Get Quote
Avnet Asia	NTH4L160N120SC1		90	51 Weeks	450	1 - 10 - 100 - 1000 $1.06 10000 $1.06	Buy Now

Avnet Silica	NTH4L160N120SC1			52 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NTH4L160N120SC1		840	53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NTH4L160N120SC1		528			1 $2.66 10 $2.66 100 $2.66 1000 $2.66 10000 $2.66	Get Quote
onsemi NTBG160N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L - Bulk (Alt: 91AH8448)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	NTBG160N120SC1	Bulk			800	1 $8.02 10 $4.69 100 $4.39 1000 $3.75 10000 $3.75	Get Quote
	NTBG160N120SC1	Tape & Reel		48 Weeks	800	1 - 10 - 100 - 1000 $4.32 10000 $4.11	Buy Now
Newark ()	NTBG160N120SC1	Bulk	765		1	1 $8.02 10 $4.69 100 $4.39 1000 $3.75 10000 $3.75	Buy Now
	NTBG160N120SC1	Cut Tape	453		1	1 $11.92 10 $11.92 100 $7.07 1000 $6.65 10000 $6.36	Buy Now
	NTBG160N120SC1	Tape & Reel	453		10	1 $11.92 10 $11.92 100 $7.07 1000 $6.65 10000 $6.36	Buy Now
Rochester Electronics	NTBG160N120SC1		3,410		1	1 - 10 - 100 $4.22 1000 $3.77 10000 $3.55	Buy Now
TME	NTBG160N120SC1				800	1 - 10 - 100 - 1000 $5.58 10000 $5.58	Get Quote
Chip 1 Exchange	NTBG160N120SC1		3,596			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Asia	NTBG160N120SC1		54	48 Weeks	800	1 - 10 - 100 - 1000 $18.57 10000 $17.42	Buy Now
Avnet Silica	NTBG160N120SC1			33 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NTBG160N120SC1		1,600	34 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	NTBG160N120SC1		8,000		1	1 $11.76 10 $11.76 100 $7.51 1000 $5.69 10000 $5.69	Buy Now
onsemi NVBG160N120SC1 Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L - Product that comes on tape, but is not reeled (Alt: 91AH8575)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NVBG160N120SC1	Ammo Pack			800	1 $12.19 10 $12.19 100 $7.29 1000 $6.42 10000 $6.29	Get Quote
Newark ()	NVBG160N120SC1	Cut Tape	740		1	1 $15.72 10 $15.72 100 $9.98 1000 $9.38 10000 $8.98	Buy Now
	NVBG160N120SC1	Tape & Reel	740		10	1 $15.72 10 $15.72 100 $9.98 1000 $9.38 10000 $8.98	Buy Now
	NVBG160N120SC1	Cut Tape	710		1	1 $12.19 10 $12.19 100 $7.29 1000 $6.42 10000 $6.16	Buy Now
	NVBG160N120SC1	Tape & Reel	710		10	1 $12.19 10 $12.19 100 $7.29 1000 $6.42 10000 $6.16	Buy Now
TME	NVBG160N120SC1				1	1 $12.28 10 $10.22 100 $9.65 1000 $9.65 10000 $9.65	Get Quote
Richardson RFPD	NVBG160N120SC1				800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	NVBG160N120SC1		32	68 Weeks	800	1 - 10 - 100 - 1000 $24.19 10000 $22.70	Buy Now

Avnet Silica	NVBG160N120SC1			35 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NVBG160N120SC1			36 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	NVBG160N120SC1		10,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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60N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60N120 Abstract: D-68623 IXER60N120 V9560 Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	60n120 247tm e153432 ixer60n120 +2d-68623 v9560	PDF
IXEN60N120 Abstract: 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1 Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +6ixen60n120 ixen 60n120 ixen 60n120d1 m4 diode d-68623 diode 331 ixen 60n120d1	PDF
60N120 Contextual Info: Advanced Technical Information IXEN 60N120 IC25 NPT3-IGBT VCES VCE sat typ. in miniBLOC package = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 E G E E C = Collector G = Gate C E = Emitter * * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 ot-227 e153432	PDF
60N120 Abstract: 60N120D1 Contextual Info: NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C Preliminary data sheet C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +1coeffic22	PDF
60N120 Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	Original	60n120 247tm e153432 ixer60n120 +480e10 igbt for induction heating ic ixer 60n120 20600t	PDF
Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	Original	60n120 247tm e153432 ixer60n120	PDF
60N120 Abstract: 60N120D1 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623 Contextual Info: Advanced Technical Information NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +3ixen 60n120 ixen 60n120d1 induction heating technical information d-68623	PDF
Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A VCES = 1200 V VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +1ixen60n120	PDF
60N120 Abstract: induction heat resonant D-68623 V9560 60n12 Contextual Info: Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE sat typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES	Original	60n120 247tm e153432 induction heat resonant +3d-68623 v9560 60n12	PDF
60N120 Abstract: IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1 Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +3ixen60n120 ixen 60n120 ixen 60n120d1 d-68623	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	o-268 35-06c 40-06d ot-227b +1250-12e 50-12bd 30n120d1 55n120d1 35n60bd1 30n120d 35n60b transistor c90 40n120d1 20n120d1 60n120 20n60bd1	PDF

60N120 Search Results

60N120 Result Highlights (1)

60N120 Price and Stock

onsemi NVH4L160N120SC1

onsemi NVHL160N120SC1

onsemi NTH4L160N120SC1

onsemi NTBG160N120SC1

onsemi NVBG160N120SC1

60N120 Datasheets Context Search

60N120

IXEN60N120

60N120

60N120

60N120

60N120

60N120

60N120

7N60B equivalent

30N120D1