60N120 Search Results

60N120 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TW060N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 36 A, 0.078 Ω@18 V, TO-247	Datasheet

60N120 Price and Stock

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onsemi NVHL160N120SC1 SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NVHL160N120SC1		2,423			1 $13.55 10 $8.19 100 $8.19 1000 $6.45 10000 $6.42	Buy Now
onsemi NTBG160N120SC1 SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NTBG160N120SC1		1,930			1 $7.30 10 $5.87 100 $5.10 1000 $4.26 10000 $4.26	Buy Now
onsemi NTH4L160N120SC1 SiC MOSFETs SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NTH4L160N120SC1		1,853			1 $6.73 10 $4.84 100 $4.84 1000 $4.41 10000 $4.41	Buy Now
onsemi NTHL160N120SC1 SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NTHL160N120SC1		767			1 $9.36 10 $6.01 100 $6.01 1000 $6.01 10000 $6.01	Buy Now
onsemi NVBG160N120SC1 SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NVBG160N120SC1		413			1 $12.19 10 $9.05 100 $7.29 1000 $7.29 10000 $7.29	Buy Now

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60N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60N120 Abstract: D-68623 IXER60N120 V9560 Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	60N120 247TM E153432 IXER60N120 60N120 D-68623 IXER60N120 V9560	PDF
IXEN60N120 Abstract: 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1 Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60N120 60N120D1 OT-227 E153432 IXEN60N120 IXEN60N120 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1	PDF
60N120 Contextual Info: Advanced Technical Information IXEN 60N120 IC25 NPT3-IGBT VCES VCE sat typ. in miniBLOC package = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 E G E E C = Collector G = Gate C E = Emitter * * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60N120 OT-227 E153432	PDF
60N120 Abstract: 60N120D1 Contextual Info: NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C Preliminary data sheet C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60N120 60N120D1 OT-227 E153432 60N120 60N120D1 coeffic22	PDF
60N120 Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	Original	60N120 247TM E153432 IXER60N120 60N120 IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t	PDF
Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	Original	60N120 247TM E153432 IXER60N120	PDF
60N120 Abstract: 60N120D1 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623 Contextual Info: Advanced Technical Information NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60N120 60N120D1 OT-227 E153432 60N120D1 60N120 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623	PDF
Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A VCES = 1200 V VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60N120 60N120D1 OT-227 E153432 IXEN60N120	PDF
60N120 Abstract: induction heat resonant D-68623 V9560 60n12 Contextual Info: Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE sat typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES	Original	60N120 247TM E153432 induction heat resonant D-68623 V9560 60n12	PDF
60N120 Abstract: IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1 Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60N120 60N120D1 OT-227 E153432 IXEN60N120 60N120 IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1	PDF