Datasheet Archive: 60N12 datasheets

60N12 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TW060N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 36 A, 0.078 Ω@18 V, TO-247	Datasheet

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Alps Alpine Co Ltd RS60N1219A04 DUAL-UNIT / 10K OHM 15A /
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	RS60N1219A04		600			1 - 10 $10.70 100 $8.55 1000 $6.85 10000 $6.15	Buy Now
Neutron USA	RS60N1219A04					1 $59.99 10 $59.99 100 $59.99 1000 $59.99 10000 $59.99	Buy Now
onsemi NVH4L160N120SC1 Silicon Carbide (SiC) MOSFET N‐Channel - EliteSiC 160 mohm 1200 V M1 TO247−4L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	NVH4L160N120SC1					1 - 10 - 100 - 1000 $6.53 10000 $6.53	Buy Now
Avnet Americas ()	NVH4L160N120SC1	Tube			450	1 - 10 - 100 - 1000 $4.58 10000 $4.35	Get Quote
	NVH4L160N120SC1	Tube		53 Weeks	450	1 - 10 - 100 - 1000 $6.59 10000 $6.35	Get Quote
Newark	NVH4L160N120SC1	Bulk	406		1	1 $15.12 10 $9.64 100 $9.06 1000 $8.68 10000 $8.68	Buy Now
Rochester Electronics	NVH4L160N120SC1		38,340		1	1 - 10 - 100 $6.59 1000 $5.90 10000 $5.55	Buy Now
TME	NVH4L160N120SC1				1	1 $13.15 10 $10.87 100 $10.87 1000 $10.87 10000 $10.87	Get Quote

EBV Elektronik	NVH4L160N120SC1			53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	NVH4L160N120SC1		900			1 $3.48 10 $3.48 100 $3.48 1000 $3.48 10000 $3.48	Get Quote
onsemi NVHL160N120SC1 Silicon Carbide (SiC) MOSFET N‐Channel - EliteSiC 160 mΩ 1200 V M1 TO247−3L Silicon Carbide MOSFET N?Channel 1200 V 160 m? TO247?3L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	NVHL160N120SC1					1 - 10 - 100 - 1000 $6.21 10000 $6.21	Buy Now
Avnet Americas	NVHL160N120SC1	Tube		40 Weeks	450	1 - 10 - 100 - 1000 $6.27 10000 $6.04	Buy Now
Newark	NVHL160N120SC1	Bulk	886		1	1 $14.54 10 $13.02 100 $9.43 1000 $8.79 10000 $8.79	Buy Now
Rochester Electronics	NVHL160N120SC1		450		1	1 - 10 - 100 $6.26 1000 $5.60 10000 $5.27	Buy Now
TME	NVHL160N120SC1				1	1 $12.59 10 $8.94 100 $8.53 1000 $8.53 10000 $8.53	Get Quote

Avnet Silica	NVHL160N120SC1			15 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NVHL160N120SC1			16 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NTH4L160N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC 160 mohm 1200 V M1 TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC 160 mohm 1200 V M1 TO-247-4L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	NTH4L160N120SC1					1 - 10 - 100 - 1000 $4.38 10000 $4.38	Buy Now
Rochester Electronics	NTH4L160N120SC1		66		1	1 - 10 - 100 $4.43 1000 $3.96 10000 $3.73	Buy Now
TME	NTH4L160N120SC1				1	1 $7.07 10 $5.71 100 $5.14 1000 $5.14 10000 $5.14	Get Quote
Avnet Asia	NTH4L160N120SC1		90	51 Weeks	450	1 - 10 - 100 - 1000 $1.06 10000 $1.06	Buy Now
Avnet Silica	NTH4L160N120SC1			52 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	NTH4L160N120SC1		840	53 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NTH4L160N120SC1		528			1 $2.66 10 $2.66 100 $2.66 1000 $2.66 10000 $2.66	Get Quote
Infineon Technologies AG 1EDI60N12AFXUMA1 IGBT, MOSFET, SiC MOSFET Driver, 1 Channel, High Side and Low Side, 9.4A, 3.1 V to 17 V, 125 ns - Tape and Reel (Alt: 1EDI60N12AFXUMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	1EDI60N12AFXUMA1	Tape & Reel	5,000	52 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $1.22	Buy Now
Newark ()	1EDI60N12AFXUMA1	Cut Tape	9,466		1	1 $2.55 10 $2.55 100 $1.55 1000 $1.40 10000 $1.34	Buy Now
	1EDI60N12AFXUMA1	Tape & Reel	9,466		100	1 - 10 - 100 $1.55 1000 $1.40 10000 $1.34	Buy Now
RS	1EDI60N12AFXUMA1	Bulk	100	3 Weeks	1	1 $0.42 10 $0.42 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
TME	1EDI60N12AFXUMA1				2,500	1 - 10 - 100 - 1000 - 10000 $1.10	Get Quote
EBV Elektronik	1EDI60N12AFXUMA1			53 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Win Source Electronics	1EDI60N12AFXUMA1		16,670			1 - 10 - 100 $1.83 1000 $1.57 10000 $1.57	Buy Now

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60N12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60N120 Abstract: D-68623 IXER60N120 V9560 Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	60n120 247tm e153432 ixer60n120 +2d-68623 v9560	PDF
IXEN60N120 Abstract: 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1 Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +6ixen60n120 ixen 60n120 ixen 60n120d1 m4 diode d-68623 diode 331 ixen 60n120d1	PDF
60N120 Contextual Info: Advanced Technical Information IXEN 60N120 IC25 NPT3-IGBT VCES VCE sat typ. in miniBLOC package = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 E G E E C = Collector G = Gate C E = Emitter * * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 ot-227 e153432	PDF
60N120 Abstract: 60N120D1 Contextual Info: NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C Preliminary data sheet C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +1coeffic22	PDF
60N120 Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	Original	60n120 247tm e153432 ixer60n120 +480e10 igbt for induction heating ic ixer 60n120 20600t	PDF
Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C	Original	60n120 247tm e153432 ixer60n120	PDF
60N120 Abstract: 60N120D1 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623 Contextual Info: Advanced Technical Information NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +3ixen 60n120 ixen 60n120d1 induction heating technical information d-68623	PDF
Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A VCES = 1200 V VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +1ixen60n120	PDF
60N120 Abstract: induction heat resonant D-68623 V9560 60n12 Contextual Info: Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE sat typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES	Original	60n120 247tm e153432 induction heat resonant +3d-68623 v9560 60n12	PDF
60N120 Abstract: IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1 Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter	Original	60n120 60n120d1 ot-227 e153432 +3ixen60n120 ixen 60n120 ixen 60n120d1 d-68623	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	o-268 35-06c 40-06d ot-227b +1250-12e 50-12bd 30n120d1 55n120d1 35n60bd1 30n120d 35n60b transistor c90 40n120d1 20n120d1 60n120 20n60bd1	PDF
Contextual Info: E U P EC L IE J> m CI0 G1 0 7 A 0 2 1 H IUPEC T T 61 N, TD 61 N, DT61 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600, 800 1000, 1200 1400, 1600 V V V + 100 V di/dt cr 120 60 76 1550 1400 12000 9800 150 A	OCR Scan		PDF

60N12 Search Results

60N12 Result Highlights (1)

60N12 Price and Stock

Alps Alpine Co Ltd RS60N1219A04

onsemi NVH4L160N120SC1

onsemi NVHL160N120SC1

onsemi NTH4L160N120SC1

Infineon Technologies AG 1EDI60N12AFXUMA1

60N12 Datasheets Context Search

60N120

IXEN60N120

60N120

60N120

60N120

60N120

60N120

60N120

7N60B equivalent

30N120D1