60N12 Search Results
60N12 Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TW060N120C |
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N-ch SiC MOSFET, 1200 V, 36 A, 0.078 Ω@18 V, TO-247 | Datasheet |
60N12 Price and Stock
Infineon Technologies AG 1EDI60N12AFXUMA1DIGITAL ISO 1CH GATE DVR DSO8-51 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1EDI60N12AFXUMA1 | Cut Tape | 9,183 | 1 |
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1EDI60N12AFXUMA1 | 24,782 |
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1EDI60N12AFXUMA1 | Cut Tape | 1 |
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1EDI60N12AFXUMA1 | Bulk | 100 | 3 Weeks | 1 |
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1EDI60N12AFXUMA1 | Cut Tape | 7,427 | 0 Weeks, 1 Days | 1 |
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1EDI60N12AFXUMA1 | 3 |
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1EDI60N12AFXUMA1 | 27 Weeks | 2,500 |
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1EDI60N12AFXUMA1 | 30,000 |
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onsemi NVBG160N120SC1SICFET N-CH 1200V 19.5A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVBG160N120SC1 | Digi-Reel | 1,867 | 1 |
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NVBG160N120SC1 | Bulk | 800 |
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NVBG160N120SC1 | 1,368 |
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NVBG160N120SC1 | 1 |
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NVBG160N120SC1 | 800 |
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NVBG160N120SC1 | 29,521 |
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NVBG160N120SC1 | 32 | 6 Weeks | 800 |
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NVBG160N120SC1 | 7 Weeks | 800 |
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NVBG160N120SC1 | 8 Weeks | 800 |
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NVBG160N120SC1 | 159,200 |
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NVBG160N120SC1 | 13,333 |
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onsemi NVH4L160N120SC1SICFET N-CH 1200V 17.3A TO247 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVH4L160N120SC1 | Tube | 1,194 | 1 |
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NVH4L160N120SC1 | Tube | 6 Weeks | 450 |
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NVH4L160N120SC1 | 197 |
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NVH4L160N120SC1 | 38,265 | 1 |
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NVH4L160N120SC1 | 1 |
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NVH4L160N120SC1 | 450 |
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NVH4L160N120SC1 | 450 | 8 Weeks | 30 |
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NVH4L160N120SC1 | 900 |
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NVH4L160N120SC1 | 900 | 1 |
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NVH4L160N120SC1 | 62 | 1 |
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STMicroelectronics SCTW60N120G2DISCRETE |
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SCTW60N120G2 | Bulk | 599 | 1 |
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SCTW60N120G2 | 41 |
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SCTW60N120G2 | Bulk | 72 | 1 |
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SCTW60N120G2 | 41 | 1 |
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SCTW60N120G2 | 600 | 17 Weeks | 30 |
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SCTW60N120G2 | 33 Weeks | 30 |
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onsemi NTBG160N120SC1SICFET N-CH 1200V 19.5A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTBG160N120SC1 | Cut Tape | 589 | 1 |
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NTBG160N120SC1 | Bulk | 800 |
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NTBG160N120SC1 | 2,202 |
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NTBG160N120SC1 | 3,910 | 1 |
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NTBG160N120SC1 | 800 |
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NTBG160N120SC1 | 800 |
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NTBG160N120SC1 | 3,932 |
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NTBG160N120SC1 | 54 | 6 Weeks | 800 |
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NTBG160N120SC1 | 7 Weeks | 800 |
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NTBG160N120SC1 | 1,600 | 8 Weeks | 800 |
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NTBG160N120SC1 | 1,600 | 1 |
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NTBG160N120SC1 | 2,925 | 1 |
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60N12 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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60N120
Abstract: D-68623 IXER60N120 V9560
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Original |
60N120 247TM E153432 IXER60N120 60N120 D-68623 IXER60N120 V9560 | |
IXEN60N120
Abstract: 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1
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Original |
60N120 60N120D1 OT-227 E153432 IXEN60N120 IXEN60N120 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1 | |
60N120Contextual Info: Advanced Technical Information IXEN 60N120 IC25 NPT3-IGBT VCES VCE sat typ. in miniBLOC package = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 E G E E C = Collector G = Gate C E = Emitter * * Either Emitter terminal can be used as Main or Kelvin Emitter |
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60N120 OT-227 E153432 | |
60N120
Abstract: 60N120D1
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60N120 60N120D1 OT-227 E153432 60N120 60N120D1 coeffic22 | |
60N120
Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t
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60N120 247TM E153432 IXER60N120 60N120 IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t | |
Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C |
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60N120 247TM E153432 IXER60N120 | |
60N120
Abstract: 60N120D1 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623
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Original |
60N120 60N120D1 OT-227 E153432 60N120D1 60N120 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623 | |
Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A VCES = 1200 V VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter |
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60N120 60N120D1 OT-227 E153432 IXEN60N120 | |
60N120
Abstract: induction heat resonant D-68623 V9560 60n12
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Original |
60N120 247TM E153432 induction heat resonant D-68623 V9560 60n12 | |
60N120
Abstract: IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1
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Original |
60N120 60N120D1 OT-227 E153432 IXEN60N120 60N120 IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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Original |
MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 | |
30N120D1
Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
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OCR Scan |
O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 | |
Contextual Info: E U P EC L IE J> m CI0 G1 0 7 A 0 2 1 H IUPEC T T 61 N, TD 61 N, DT61 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600, 800 1000, 1200 1400, 1600 V V V + 100 V di/dt cr 120 60 76 1550 1400 12000 9800 150 A |
OCR Scan |