40N120FL Search Results
40N120FL Price and Stock
Micro Commercial Components MIW40N120FLA-BPIGBT TRENCH FS 1200V 80A TO247AB |
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MIW40N120FLA-BP | Tube | 1,656 | 1 |
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MIW40N120FLA-BP | 1,706 |
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onsemi NGTB40N120FL3WGIGBT TRENCH FS 1200V 160A TO-247 |
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NGTB40N120FL3WG | Tube | 1,650 | 1 |
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NGTB40N120FL3WG | Tube | 29 Weeks | 240 |
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NGTB40N120FL3WG | 15 |
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NGTB40N120FL3WG | Bulk | 90 |
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NGTB40N120FL3WG | 47 | 1 |
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NGTB40N120FL3WG | 10 |
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NGTB40N120FL3WG | 240 |
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NGTB40N120FL3WG | 75,273 |
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NGTB40N120FL3WG | 29 Weeks | 330 |
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NGTB40N120FL3WG | 30 Weeks | 30 |
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NGTB40N120FL3WG | 13,507 |
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NGTB40N120FL3WG | 31 Weeks | 30 |
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NGTB40N120FL3WG | 10,007 |
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onsemi NGTB40N120FL2WGIGBT TRENCH FS 1200V 80A TO-247 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTB40N120FL2WG | Tube | 16 | 1 |
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NGTB40N120FL2WG | Tube | 21 Weeks | 210 |
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NGTB40N120FL2WG |
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NGTB40N120FL2WG | 2 | 1 |
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NGTB40N120FL2WG | 1 |
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NGTB40N120FL2WG | 50 |
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NGTB40N120FL2WG | 210 |
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NGTB40N120FL2WG | 21 Weeks | 210 |
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NGTB40N120FL2WG | 22 Weeks | 30 |
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NGTB40N120FL2WG | 76,500 |
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NGTB40N120FL2WG | 23 Weeks | 30 |
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NGTB40N120FL2WG | 21 |
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NGTB40N120FL2WG | 64,000 |
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onsemi NGTB40N120FLWGIGBT TRENCH FS 1200V 80A TO-247 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTB40N120FLWG | Tube |
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NGTB40N120FLWG | Bulk | 1 |
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NGTB40N120FLWG | 947 |
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onsemi NGTG40N120FL2WGIGBT TRENCH FS 1200V 80A TO-247 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NGTG40N120FL2WG | Tube |
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NGTG40N120FL2WG | Bulk | 60 |
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NGTG40N120FL2WG | 8 | 1 |
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NGTG40N120FL2WG | 15 |
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40N120FL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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40n120
Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120
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Original |
NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120 | |
Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is |
Original |
NGTB40N120FLWG NGTB40N120FLW/D | |
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTB40N120FL2WG NGTB40N120FL2W/D | |
Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is |
Original |
NGTB40N120FLWG NGTB40N120FLW/D | |
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTB40N120FL2WG NGTB40N120FL2W/D | |
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTB40N120FL2WG NGTB40N120FL2W/D | |
Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTB40N120FL2WG NGTB40N120FL2W/D |