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    40N120FL Search Results

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    Micro Commercial Components MIW40N120FLA-BP

    IGBT TRENCH FS 1200V 80A TO247AB
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    DigiKey MIW40N120FLA-BP Tube 1,656 1
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    onsemi NGTB40N120FL3WG

    IGBT TRENCH FS 1200V 160A TO-247
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    DigiKey NGTB40N120FL3WG Tube 1,650 1
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    Richardson RFPD NGTB40N120FL3WG 240
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    Win Source Electronics NGTB40N120FL3WG 10,007
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    onsemi NGTB40N120FL2WG

    IGBT TRENCH FS 1200V 80A TO-247
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    DigiKey NGTB40N120FL2WG Tube 16 1
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    Mouser Electronics NGTB40N120FL2WG
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    Rochester Electronics NGTB40N120FL2WG 2 1
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    TME NGTB40N120FL2WG 1
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    Richardson RFPD NGTB40N120FL2WG 210
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    Chip Stock NGTB40N120FL2WG 76,500
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    Win Source Electronics NGTB40N120FL2WG 64,000
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    onsemi NGTB40N120FLWG

    IGBT TRENCH FS 1200V 80A TO-247
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    RS NGTB40N120FLWG Bulk 1
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    onsemi NGTG40N120FL2WG

    IGBT TRENCH FS 1200V 80A TO-247
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    40N120FL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40n120

    Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120
    Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120 PDF

    Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D PDF

    Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Contextual Info: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original
    NGTB40N120FLWG NGTB40N120FLW/D PDF

    Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Contextual Info: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original
    NGTB40N120FL2WG NGTB40N120FL2W/D PDF