40N120
Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623
Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
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40n12040n120d1o-24740n120d+240n120 datasheetd-68623
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40N120
Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d
Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C
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40n12040n120d1o-24740n120 datasheet+4160mjd-68623ns600240n120d
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40n120
Abstract: 40N120D1 40N120 DATASHEET 40n120 igbt D-68623 40n120d
Contextual Info: Advanced Technical Information NPT3 IGBT IC25 IXEH 40N120 IXEH 40N120D1 VCES with optional diode VCE sat typ. = 60 A = 1200 V = 2.4 V TO-247 AD G C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings
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40n12040n120d1o-24740n120 datasheet+340n120 igbtd-6862340n120d
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40n120
Abstract: 40N120D1
Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2
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30N120D1
Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120
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o-26835-06c40-06dot-227b+1250-12e50-12bd30n120d155n120d135n60bd130n120d35n60btransistor c9040n120d120n120d160n12020n60bd1
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